Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
参数名称 | 属性值 |
厂商名称 | SHINDENGEN |
包装说明 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
外壳连接 | DRAIN |
配置 | SINGLE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (ID) | 2 A |
最大漏源导通电阻 | 0.45 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 8 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | SINGLE |
晶体管元件材料 | SILICON |
F2E6P-4101 | 2SJ365-4061 | 2SJ365-4071 | 2SJ365-4101 | F2E6P-4061 | F2E6P-4071 | F2E6P-4100 | |
---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknow | unknow | unknow | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (ID) | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
最大漏源导通电阻 | 0.45 Ω | 0.45 Ω | 0.45 Ω | 0.45 Ω | 0.45 Ω | 0.45 Ω | 0.45 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
厂商名称 | SHINDENGEN | - | - | - | SHINDENGEN | SHINDENGEN | SHINDENGEN |
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