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JANTXV1N6643

产品描述Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN
产品类别分立半导体    二极管   
文件大小395KB,共26页
制造商SENSITRON
官网地址http://www.sensitron.com/
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JANTXV1N6643概述

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN

JANTXV1N6643规格参数

参数名称属性值
厂商名称SENSITRON
零件包装代码DO-35
包装说明O-XALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
JESD-30 代码O-XALF-W2
元件数量1
端子数量2
最高工作温度200 °C
最大输出电流0.3 A
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
认证状态Qualified
参考标准MIL-19500/578E
最大重复峰值反向电压75 V
最大反向恢复时间0.006 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL

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The documentation and process conversion measures
necessary to comply with this document shall be
completed by 24 September 2013.
INCH-POUND
MIL-PRF-19500/578M
24 June 2013
SUPERSEDING
MIL-PRF-19500/578L
19 October 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643,
1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US, 1N6642UB, 1N6642UB2,
1N6642UB2R, 1N6642UBCA, 1N6642UBD, 1N6642UBCC, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
The JANS1N4148-1 is no longer qualified and is superseded by JANS1N6642. See
6.4.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for switching diodes. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. See figures 1 (DO-35), 2 (U, US), 3 (UB), 4 (UB2), 5, and 6.
1.3 Maximum ratings. Unless otherwise specified T
A
= +25°C.
VBR
Types
VRWM IO(PCB)
TA=75
°
(1) (2)
V (pk) V (pk)
1N6638
1N6638U, 1N6638US
1N6642
1N6642U, 1N6642US
1N6642UB, 1N6642UB2,
1N6642UB2R, 1N6642UBCA,
1N6642UBD, 1N6642UBCC
1N6643
1N6643U, 1N6643US
150
150
100
100
100
75
75
125
125
75
75
75
50
50
mA
300
300
300
300
300
300
300
IFSM
tp =
1/120 s
RθJL
L=
.375 inch
(9.53 mm)
(1) (2)
RθJEC
L=0
(1)
RθJA(PCB)
(2)
RθJSP
(1) (3)
TSTG
& TJ
A (pk)
2.5
2.5
2.5
2.5
2.5
2.5
2.5
°
C/W
150
°
C/W
40
°
C/W
250
250
250
250
325
°
C/W
°
C
-65 to +175
-65 to +175
-65 to +175
-65 to +175
150
40
100
-65 to +200
-65 to +175
-65 to +175
150
40
250
250
* (1)
* (2)
(3)
For temperature-current derating curves, see figures 7 and 8.
See figures 9, 10, 11, and 13 for thermal impedance curves. T
A
= +75°C for both axial and Metal Electrode
Leadless Face diodes (MELF) (U, US) on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm)
1-layer 1-Oz Cu, horizontal, in still air; pads for U, US = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial
= .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L ≤ .187 inch
(≤ 4.75 mm); RθJA with a defined PCB thermal resistance condition included, is measured at IO = 300 mA dc.
RθJSP refers to thermal resistance from junction to the solder pads of the UB package.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.dla.mil
.
AMSC N/A
FSC 5961
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