TN2535
Low Threshold
New Product
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
350V
*
Same as SOT-89.
R
DS(ON)
(max)
10Ω
V
GS(th)
(max)
2.0V
I
D(ON)
(min)
1.0A
Order Number / Package
TO-243AA*
TN2535N8
Product supplied on 2000 piece carrier tape reels.
Features
❏
Low threshold
❏
High input impedance
❏
Low input capacitance — 125pF max.
❏
Fast switching speeds
❏
Low on resistance
❏
Free from secondary breakdown
❏
Low input and output leakage
Product marking for TO-243AA
TN5S❋
Where
❋
= 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
❏
Logic level interfaces – ideal for TTL and CMOS
❏
Solid state relays
❏
Battery operated systems
❏
Photo voltaic drives
❏
Analog switches
❏
General purpose line drivers
❏
Telecom switches
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
G
D
S
D
TO-243AA
(SOT-89)
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TN2535
Thermal Characteristics
Package
TO-243AA
†
I
D
(continuous)*
283mA
I
D
(pulsed)
1.6A
Power Dissipation
@ T
A
= 25
°
C
1.6W
†
θ
jc
°
C/W
15
θ
ja
°
C/W
78
†
I
DR
*
283mA
I
DRM
1.6A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
0.5
1.0
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
15
10
10
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
300
125
125
70
25
20
15
25
20
1.8
V
ns
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 200mA
ns
V
DD
= 25V,
I
D
= 200mA,
R
GEN
= 25Ω
pF
0.75
%/°C
m
Ω
Parameter
Min
350
1.0
2.0
-4.0
100
1.0
Typ
Max
Unit
V
V
mV/°C
nA
µA
A
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3.0V, I
D
= 20mA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 200mA
V
GS
= 10V, I
D
= 200mA
V
DS
= 25V, I
D
= 100mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
V
DD
R
L
OUTPUT
D.U.T.
TN2535
Typical Performance Curves
Output Characteristics
2.0
1.2
V
GS
=10V
Saturation Characteristics
V
GS
= 10V
8.0V
6.0V
V
GS
=8V
1.0
5.0V
1.6
V
GS
=6V
ID (Amperes)
V
GS
=5V
1.2
ID (Amperes)
0.8
V
GS
= 4.0V
0.6
V
GS
=4V
0.8
0.4
V
GS
= 3.0V
0.4
V
GS
=3V
0.2
0.0
0
10
20
30
40
50
0.0
0
2
4
6
8
10
VDS (Volts)
VDS (Volts)
Transconductance vs. Drain Current
0.8
V
DS
=15V
Power Dissipation vs. Ambient Temperature
2.0
TO-243AA
T
A
=-55¡C
1.6
GFS (Siemens)
0.6
PD (Watts)
T
A
=25¡C
T
A
=125¡C
0.4
0.8
1.2
1.6
1.2
0.4
0.8
0.2
0.4
0.0
0.0
0.0
0
25
50
75
100
125
150
ID (Amperes)
TA (¡C)
Maximum Rated Safe Operating Area
10
A
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
T
=25¡C
TO-243AA (Pulsed)
0.8
ID (Amperes)
1.0
0.6
TO-243AA (DC)
TO-243AA
T
A
= 2 5 C
P
D
= 1 . 6 W
0.4
°
0.1
0.2
0.01
1
10
100
1000
0
0.001
0.01
0.1
1
10
VDS (Volts)
tp (seconds)
3
TN2535
Typical Performance Curves
1.2
BV
DSS
Variation with Temperature
BV @ 250µA
On Resistance vs. Drain Current
20
VGS = 3V
16
12
8
4
0
0.0
VGS = 10V
VGS = 4.5V
BVDSS (normalized)
1.0
0.9
0.8
-50
RDS(ON) (ohms)
1.1
0
TJ (
¡
C)
50
100
150
0.4
ID (Amperes)
0.8
1.2
1.6
2.0
Transfer Characteristics
2.0
TA = 25¡C
1.2
1.1
1.0
0.9
0.8
VDS = 15V
0
2
VGS(th) and RDS(ON) w/ Temperature
VGS(th) @ 1mA
2.4
ID (Amperes)
TA = -55¡C
1.2
0.8
0.4
0.0
TA = 125¡C
1.6
1.2
0.8
RDS(ON) @ 10V, 0.2A
0
0.4
150
VGS (Volts)
4
6
8
10
0.7
-50
TJ (
¡
C)
50
100
200
Capacitance vs. Drain Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
10
8
ID = 283mA
VDS=10V
VDS=40V
295pF
4
2
0
0.0
92pF
0.4
0.8
1.2
1.6
2.0
C (picofarads)
150
100
CISS
50
CRSS
0
10
20
30
COSS
40
0
V
GS
(volts)
6
VDS (Volts)
Q
G
(nanocoulombs)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
RDS(ON) (normalized)
VGS(th) (normalized)
1.6
2.0
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