TN3467A / MMPQ3467
Discrete POWER & Signal
Technologies
TN3467A
MMPQ3467
E
B
E
B
E
B
E
B
C
TO-226
B
E
SOIC-16
C
C
C
C
C
C
C
C
PNP Switching Transistor
This device is designed for high speed saturated switching applications
at currents to 800 mA. Sourced from Process 70.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
40
5.0
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
TN3467A
1.0
8.0
50
125
Max
MMPQ3467
1.0
8.0
Units
W
mW/°C
°C/W
°C/W
°C/W
°C/W
125
240
©
1997 Fairchild Semiconductor Corporation
TN3467A / MMPQ3467
PNP Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEV
I
CEX
I
CBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base-Cutoff Current
Collector-Cutoff Current
Collector-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CE
= 30 V, V
BE
= 3.0 V
V
CE
= 30 V, V
BE
= 3.0 V
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 150
°
C
40
40
5.0
120
100
0.01
15
V
V
V
nA
nA
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 1.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
40
40
40
120
0.3
0.5
1.0
1.0
1.2
1.6
V
V
V
V
V
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.8
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
I
C
= 50 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 KHz
V
BE
= 0.5 V, I
C
= 0, f = 1.0 KHz
175
25
100
MHz
pF
pF
SWITCHING CHARACTERISTICS
(except for MMPQ3467)
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 30 V, V
BE
= 2.0 V,
I
C
= 500 mA, I
B1
= 50 mA
V
CC
= 30 V, I
C
= 500 mA,
I
B1
= I
B2
= 50 mA
10
30
60
30
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
TN3467A / MMPQ3467
PNP Switching Transistor
(continued)
DC Typical Characteristics
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
140
120
100
80
60
40
20
0
0.01
I
C
0.1
- COLLECTOR CURRENT (A)
P 0
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
25 °C
V
CE
= 1V
125 º
C
25 °C
- 40 ºC
0.2
125 º
C
- 40 ºC
0.1
1
0
10
100
300
I
C
- COLLECTOR CURRENT (mA)
P 0
500
1
0.8
0.6
0.4
0.2
10
I
C
100
- COLLECTOR CURRENT (mA)
P 0
V
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
-
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
- 40 ºC
25 °C
- 40 ºC
25 °C
0.8
125 º
C
β
= 10
0.6
125 º
C
1000
0.4
10
100
I
C
- COLLECTOR CURRENT (mA)
P 0
300
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
6000
V
CB
= 30V
1000
100
10
1
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (ºC)
150
TN3467A / MMPQ3467
PNP Switching Transistor
(continued)
AC Typical Characteristics
Input / Output Capacitance
vs. Reverse Bias Voltage
Switching Times vs.
Collector Current
Switching Times vs.
Ambient Temperature
Delay Time vs. Turn On Base
Current and Reverse Bias
Emitter Voltage
Rise Time vs. Collector Current
and Turn On Base Current
Turn On / Turn Off Times
vs. Collector Current
TN3467A / MMPQ3467
PNP Switching Transistor
(continued)
AC Typical Characteristics
(continued)
Fall Time vs. Turn On
and Turn Off Base Currents
Fall Time vs. Turn On
and Turn Off Base Currents
Storage Time vs. Turn On and
Turn Off Base Currents
Storage Time vs. Turn On and
Turn Off Base Currents
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