TN5325
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
250V
R
DS(ON)
(max)
7.0Ω
V
GS(th)
(max)
2.0V
I
D(on)
(min)
1.2A
Order Number / Package
TO-236AB*
TN5325K1
TO-92
TN5325N3
TO-243AA**
TN5325N8
Product marking for SOT-23:
N3C❋
where
❋
= 2-week alpha date code
* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
** Shipped on 2,000 piece carrier tape and reels.
Product marking for TO-243AA
Features
❏
Low threshold – 2.0V max.
❏
Free from secondary breakdown
❏
Low power drive requirement
❏
Low C
ISS
and fast switching speeds
❏
Excellent thermal stability
❏
High input impedance and high gain
❏
Complementary N- and P-channel devices
TN3C❋
Where
❋
= 2-week alpha date code
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏
Logic level interfaces – ideal for TTL and CMOS
❏
Solid state relays
❏
Battery operated systems
❏
Photo voltaic drives
❏
Analog switches
❏
General purpose line drivers
❏
Telecom switches
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
S G D
G
D
S
D
G
S
D
TO-92
TO-243AA
(SOT-89)
TO-236AB
(SOT-23)
Note: See Package Outline section for dimensions.
1
TN5325
Thermal Characteristics
Package
TO-236AB
TO-92
TO-243AA
I
D
(continuous)*
150mA
215mA
316mA
I
D
(pulsed)
400mA
800mA
1.5A
Power Dissipation
@ T
A
= 25
°
C
0.36W
0.74W
1.6W**
θ
jc
°
C/W
200
125
15
θ
ja
°
C/W
350
170
78**
I
DR
*
150mA
215mA
316mA
I
DRM
400mA
800mA
1.5A
*
I
D
(continuous) is limited by max rated T
j
.
**Mounted on FR5 board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
250
0.6
2.0
-4.5
100
1.0
10.0
1.0
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Typ
Max
Unit
V
V
mV/°C
nA
µA
µA
mA
Conditions
I
D
= 100µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= 100V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 150mA
V
GS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, I
D
= 150mA
V
DS
= 25V, I
D
= 200mA
V
GS
= 0V, V
DS
= 25V, f = 1MHz
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.6
1.2
8.0
7.0
1.0
150
110
60
23
20
15
25
25
1.8
300
V
ns
ns
pF
A
Ω
Ω
%/°C
m
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
Ω
V
DD
V
DD
= 25V
I
D
= 150mA
R
GEN
= 25Ω
I
SD
= 200mA, V
GS
= 0V
I
SD
= 200mA, V
GS
= 0V
R
L
OUTPUT
D.U.T.
11/12/01
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