TN5415A
Discrete POWER & Signal
Technologies
TN5415A
C
TO-226
BE
PNP High Voltage Amplifier
This device is designed for use as high voltage drivers requiring
collector currents to 100 mA. Sourced from Process 76. See
MPSA92 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
200
200
4.0
100
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TN5415A
1.0
8.0
125
50
Units
W
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation
TN5415A
PNP High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEX
I
CEO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 50 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 175 V
V
CE
= 200 V, V
BE
= 1.5 V (rev)
V
CE
= 150 V
V
EB
= 4.0 V, I
C
= 0
200
200
4.0
50
50
50
20
V
V
V
µA
µA
µA
µA
ON CHARACTERISTICS*
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
CE
= 10 V, I
C
= 50 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 50 mA, V
CE
= 10 V
30
150
2.5
1.5
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
V
CB
= 10 V, f = 1.0 MHz
V
EB
= 5.0 V, f = 1.0 MHz
I
C
= 5.0 mA, V
CE
= 10 V,
f = 5.0 MHz
I
C
= 5.0 mA, V
CE
= 10 V,
f = 1.0 kHz
V
CE
= 10 V, I
C
= 5.0 mA
V
CE
= 100 V, t = 100 mS
3.0
25
300
100
Ω
mA
15
75
pF
pF
Re
(hie)
IS /
b
Input Resistance
Safe Operating Area
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
NXP MCU
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