CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
250
-
2.0
1.0
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 125V,
I
D
= 4A
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
5.0
4.0
-
25
250
100
200
2.94
0.700
1.68
35
85
195
75
120
62
4
12
30
5.0
175
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200V,
V
GS
= 0V
V
GS
=
±20V
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)
V
GS
= 10V, I
D
= 4A
I
D
= 2A,
V
GS
= 10V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on Slash Sheet)
Gate Charge at 10V
Threshold Gate Charge (Not on Slash Sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
R
θ
JC
R
θ
JA
V
DD
= 125V, I
D
= 4A,
R
L
= 31.3Ω, V
GS
= 10V,
R
GS
= 25Ω
2-14
JANSR2N7278
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
I
SD
= 4A
I
SD
= 4A, dI
SD
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 10V, I
D
= 4A
V
GS
= 10V, I
D
= 2A
MIN
250
2.0
-
-
-
-
MAX
-
4.0
100
25
2.94
0.700
UNITS
V
V
nA
µA
V
Ω
TEST CONDITIONS
MIN
0.6
-
TYP
-
-
MAX
1.8
800
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 10V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Typical Performance Curves
5
Unless Otherwise Specified
40
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
4
I
D
, DRAIN (A)
10
100µs
3
2
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
700
1
0
-50
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
NORMALIZED
THERMAL IMPEDANCE (Z
θ
JC
)
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
10
0
10
1
0.01
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2-15
JANSR2N7278
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
+
CURRENT I
TRANSFORMER
AS
BV
DSS
t
P
I
AS
+
V
DD
V
DS
V
DD
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
50Ω
-
DUT
50V-150V
50Ω
t
AV
0V
t
P
FIGURE 4. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 5. UNCLAMPED ENERGY WAVEFORMS
V
DD
t
ON
t
d(ON)
t
OFF
t
d(OFF)
t
r
t
f
90%
R
L
V
DS
V
GS
= 10V
DUT
0V
R
GS
V
DS
90%
10%
10%
90%
V
GS
10%
50%
PULSE WIDTH
50%
FIGURE 6. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 7. RESISTIVE SWITCHING WAVEFORMS
10V
Q
g
Q
gs
V
G
Q
gd
CHARGE
FIGURE 8. BASIC GATE CHARGE WAVEFORM
2-16
JANSR2N7278
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANS)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
4. Or 100% of Initial Reading (whichever is greater).
5. Of Initial Reading.
SYMBOL
I
GSS
I
DSS
r
DS(ON)
V
GS(TH)
TEST CONDITIONS
V
GS
=
±20V
V
DS
= 80% Rated Value
T
C
= 25
o
C at Rated I
D
I
D
= 1.0mA
MAX
±20
(Note 4)
±25
(Note 4)
±20%
(Note 5)
±20%
(Note 5)
UNITS
nA
µA
Ω
V
Screening Information
TEST
Gate Stress
Pind
Pre Burn-In Tests (Note 6)
Steady State Gate Bias (Gate Stress)
V
GS
= 30V, t = 250µs
Required
MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25
o
C)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value, T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and Limits Table
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value, T
A
= 150
o
C, Time = 240 hours
5%
MIL-S-19500, Group A,
Subgroups 2 and 3
JANS
Interim Electrical Tests (Note 6)
Steady State Reverse Bias (Drain Stress)
PDA
Final Electrical Tests (Note 6)
NOTE:
6. Test limits are identical pre and post burn-in.
目前医疗监护中无法动态掌握患者信息，一旦患者病情恶化，无法在第一时间实施抢救，对数据信息维护效率低。 文中首先阐述了蓝牙技术及其在医疗监护中应用的可行性，然后设计了系统框架，给出了具体功能，BlueTooth Wireless Communication Technology Application in Medical Monitoring包括数据采集和语音报警，最后对蓝牙信号在传输...[详细]
引 言 Controller Area Network(控制器局域网，缩写为CAN)，是为解决汽车电子控制单元间的信息通信而由德国Bosch公司提出的一种总线标准，以其卓越的性能、极高的可靠性和低廉的价格，现在已经在汽车领域获得广泛应用。为了保证汽车CAN总线节点安全、稳定运转，同时为了提高大批量生产的效率，必须在生产过程中对CAN节点产品进行测试，开发基于CAN总线的汽车CAN节点...[详细]
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
