Rad Hard 40V Quad Precision Low Power Operational
Amplifiers
ISL70417SEH
The ISL70417SEH contains four very high precision amplifiers
featuring the perfect combination of low noise vs power
consumption. Low offset voltage, low I
BIAS
current and low
temperature drift making them the ideal choice for applications
requiring both high DC accuracy and AC performance. The
combination of high precision, low noise, low power and small
footprint provides the user with outstanding value and flexibility
relative to similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70417SEH is offered in a 14 lead hermetic ceramic
flatpack package. The device is offered in an industry standard
pin configuration and operates over the extended temperature
range from -55°C to +125°C.
Features
• Electrically Screened to DLA SMD#
5962-12228
• Low Input Offset Voltage . . . . . . . . . . . . . . . . . . ±110µV, Max.
• Superb Offset Temperature Coefficient . . . . . . 1µV/°C, Max.
• Input Bias Current. . . . . . . . . . . . . . . . . . . . . . . . . . ±5nA, Max.
• Input Bias Current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.
• Low Current Consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz
• Wide Supply Range . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 40V
• Operating Temperature Range. . . . . . . . . . .-55°C to +125°C
• Radiation Environment
- SEL/SEB LET
TH
(V
S
= ±20V). . . . . . . . . 73.9 MeV•cm
2
/mg
- Total Dose, High Dose Rate . . . . . . . . . . . . . . . 300krad(Si)
- Total Dose, Low Dose Rate . . . . . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer by wafer basis to
50krad(Si) at low dose rate.
Applications
• Precision Instrumentation
• Spectral Analysis Equipment
• Active Filter Blocks
• Thermocouples and RTD Reference Buffers
• Data Acquisition
• Power Supply Control
6
C
1
8.2nF
4
2
V
OS
(µV)
V
+
-
0
-2
-4
-6
V
-
-8
0
V
S
= ±15V
50
100
150
krad(Si)
200
250
300
GND
V
IN
R
1
1.84k
R
2
4.93k
3.3nF
ISL70417SEH
OUTPUT
BIAS
+
C
2
SALLEN-KEY LOW PASS FILTER (f
C
= 10kHz)
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. V
OS
SHIFT vs HIGH DOSE RATE RADIATION
July 2, 2012
FN7962.0
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas Inc. 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL70417SEH
Ordering Information
ORDERING
NUMBER
5962R1222801VXC
ISL70417SEHF/PROTO
5962R1222801V9AX
ISL70417SEHX/SAMPLE
ISL70417SEHEVAL1Z
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. For Moisture Sensitivity Level (MSL), please see device information page for
ISL70417SEH.
For more information on MSL please see tech brief
TB363.
PART NUMBER
(Notes 2, 3)
ISL70417SEHVF
ISL70417SEHF/PROTO
ISL70417SEHVX
ISL70417SEHX/SAMPLE
Evaluation Board
TEMPERATURE RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(Pb-Free)
14 Ld Flatpack
14 Ld Flatpack
DIE
DIE
K14.A
K14.A
PKG.
DWG. #
2
July 2, 2012
FN7962.0
ISL70417SEH
Pin Configuration
ISL70417SEH
(14 LD FLATPACK)
TOP VIEW
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
1
2
3
4
5
6
7
- +
B
+ -
C
A
- +
D
+ -
14
13
12
11
10
9
8
OUT_D
-IN_D
+IN_D
V-
+IN_C
-IN_C
OUT_C
Pin Descriptions
ISL70417SEH
(14 LD FLATPACK)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PIN NAME
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
OUT_C
-IN_C
+IN_C
V-
+IN_D
-IN_D
OUT_D
V+
500Ω
IN-
500Ω
IN+
V+
OUT
V-
CIRCUIT 2
V-
EQUIVALENT CIRCUIT
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Amplifier A output
DESCRIPTION
Amplifier A inverting input
Amplifier A non-inverting input
Positive power supply
Amplifier B non-inverting input
Amplifier B inverting input
Amplifier B output
Amplifier C output
Amplifier C inverting input
Amplifier C non-inverting input
Negative power supply
Amplifier D non-inverting input
Amplifier D inverting input
Amplifier D output
V+
CAPACITIVELY
COUPLED
ESD CLAMP
CIRCUIT 3
V-
CIRCUIT 1
3
July 2, 2012
FN7962.0
ISL70417SEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....42V
Maximum Supply Voltage (LET = 73.9 MeV
•
cm
2
/mg). . . . . . . . . . . ....40V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V
Max/Min Input current for Input Voltage >V+ or <V-. . . . . . . . . . . . . . . . ±20mA
Output Short-Circuit Duration (1 output at a time). . . . . . . . . . . . . . . . Indefinite
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per EIA/JESD22-A115-A) . . . . . . . . . . . . . . 300V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . . 2kV
Thermal Information
Thermal Resistance (Typical)
θ
JA
(°C/W)
θ
JC
(°C/W)
14 Ld Flatpack (Notes 3, 4). . . . . . . . . . . . .
105
15
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (T
JMAX
) . . . . . . . . . . . . . . . . . . . . .+150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V (±2.25V) to 30V (±15V)
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379
for details.
4. For
θ
JC
, the "case temp" location is the center of the ceramic on the package underside.
Electrical Specifications
V
S
± 15V, V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total
ionizing dose of 50krad(Si) with exposure a low dose rate of <10mrad(Si)/s.
PARAMETER
V
OS
DESCRIPTION
Input Offset Voltage
CONDITIONS
MIN
(Note 5)
TYP
10
MAX
(Note 5)
75
110
TCV
OS
I
B
Offset Voltage Drift
Input Bias Current
-1
-5
TCI
B
I
OS
Input Bias Current Temperature
Coefficient
Input Offset Current
-5
-1.5
-3
TCI
OS
V
CM
CMRR
Input Offset Current Temperature
Coefficient
Input Voltage Range
Common-Mode Rejection Ratio
Guaranteed by CMRR test
V
CM
= -13V to +13V
-3
-13
120
120
PSRR
Power Supply Rejection Ratio
V
S
= ±2.25V to ±20V
120
120
A
VOL
V
OH
Open-Loop Gain
Output Voltage High
V
O
= -13V to +13V, R
L
= 10kΩ to ground
R
L
= 10kΩ to ground
3,000
13.5
13.2
R
L
= 2kΩ to ground
13.3
13.0
V
OL
Output Voltage Low
R
L
= 10kΩ to ground
-13.7
-13.5
-13.2
R
L
= 2kΩ to ground
-13.55
-13.3
-13.0
13.55
14,000
13.7
145
145
0.42
1
0.08
0.1
0.08
1
1
5
5
1.5
3
3
13
UNIT
µV
µV
µV/
°
C
nA
nA
pA/°C
nA
nA
pA/°C
V
dB
dB
dB
dB
V/mV
V
V
V
V
V
V
V
V
4
July 2, 2012
FN7962.0
ISL70417SEH
Electrical Specifications
V
S
± 15V, V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total
ionizing dose of 50krad(Si) with exposure a low dose rate of <10mrad(Si)/s. (Continued)
PARAMETER
I
S
DESCRIPTION
Supply Current/Amplifier
CONDITIONS
MIN
(Note 5)
TYP
0.44
MAX
(Note 5)
0.53
0.68
I
SC
V
SUPPLY
Short-Circuit Current
Supply Voltage Range
Guaranteed by PSRR
± 2.25
43
± 20
UNIT
mA
mA
mA
V
AC SPECIFICATIONS
GBWP
e
nVp-p
e
n
e
n
e
n
e
n
in
THD + N
Gain Bandwidth Product
Voltage Noise V
P-P
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
Total Harmonic Distortion
A
V
= 1k, R
L
= 2kΩ
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 1kHz
1kHz, G = 1, V
O
= 3.5V
RMS
, R
L
= 2kΩ
1kHz, G = 1, V
O
= 3.5V
RMS
, R
L
= 10kΩ
1.5
0.25
10
8.2
8
8
0.1
0.0009
0.0005
MHz
µV
P-P
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
%
%
TRANSIENT RESPONSE
SR
Slew Rate, V
OUT
20% to 80%
A
V
= 11, R
L
= 2kΩ, V
O
= 4V
P-P
0.3
0.2
t
r
, t
f
,
Small Signal
Rise Time
10% to 90% of V
OUT
Fall Time
90% to 10% of V
OUT
t
s
Settling Time to 0.1%
10V Step; 10% to V
OUT
Settling Time to 0.01%
10V Step; 10% to V
OUT
Settling Time to 0.1%
4V Step; 10% to V
OUT
Settling Time to 0.01%
4V Step; 10% to V
OUT
t
OL
Output Positive Overload Recovery Time
A
V
= 1, V
OUT
= 50mV
P-P
,
R
L
= 10kΩ to V
CM
A
V
= 1, V
OUT
= 50mV
P-P
, R
L
= 10kΩ to V
CM
130
450
625
130
600
700
A
V
= -1, V
OUT
= 10V
P-P
, R
L
= 5kΩ to V
CM
A
V
= -1, V
OUT
= 10V
P-P
, R
L
= 5kΩ to V
CM
A
V
= -1, V
OUT
= 4V
P-P
, R
L
= 5kΩ to V
CM
A
V
= -1, V
OUT
= 4V
P-P
, R
L
= 5kΩ to V
CM
A
V
= -100, V
IN
= 0.2V
P-P,
R
L
= 2kΩ to V
CM
21
24
13
18
5.6
10.6
15
33
15
33
0.5
V/µs
V/µs
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
%
%
%
%
Output Negative Overload Recovery Time A
V
= -100, V
IN
= 0.2V
P-P,
R
L
= 2kΩ to V
CM
OS+
Positive Overshoot
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
OS-
Negative Overshoot
5
July 2, 2012
FN7962.0
MEMS传感器
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