TM
P R OD U C T
O BSOLETE
CT
UTE PRODU C)
LE SUBSTIT
PO SSIB
012A (LC
or 5962-8852
3
HA1-5104/88
September 2001
HA-5114/883
Quad, Low Noise, High Performance
Uncompensated Operational Amplifier
Description
Low noise and high performance are key words describing
the quad, uncompensated HA-5114/883. This general pur-
pose amplifier offers an array of dynamic specifications
including 12V/µs slew rate (min), and 40MHz gain-band-
width-product for A
VCL
≥
10. Complementing these outstand-
ing parameters is a very low noise specification of 6nV/√Hz
at 1kHz (max).
Fabricated using the Intersil standard high frequency D.I.
process, these operational amplifiers also offer excellent
input specifications such as 2.5mV (max) offset voltage and
75nA (max) offset current. Complementing these specifica-
tions are 100dB (min) open loop gain and 55dB channel
separation (min). Economically, HA-5114/883 also con-
sumes a very modest amount of power (225mW/ package),
while also saving board space and cost.
This impressive combination of features make this amplifier
ideally suited for designs ranging from audio amplifiers and
active filters to the most demanding signal conditioning and
instrumentation circuits.
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Input Noise Voltage Density at 1kHz. . . 6nV/√Hz(Max)
4.3nV/√Hz (Typ)
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . .12V/µs (Min)
20V/µs (Typ)
• Wide Gain Bandwidth Product (A
VCL
≥
10). . . 40MHz (Typ)
• High Open Loop Gain (Full Temp) . . . . . 100kV/V (Min)
250kV/V (Typ)
• High CMRR, PSRR (Full Temp) . . . . . . . . . . . 86dB (Min)
100dB (Typ)
• Low Offset Voltage Drift . . . . . . . . . . . . . . 3µV/
o
C (Typ)
• No Crossover Distortion
• Standard Quad Pinout
Applications
• High Quality Audio Preamplifiers
• High Q Active Filters
• Low Noise Function Generators
• Low Distortion Oscillators
• Low Noise Comparators
Part Number Information
PART
NUMBER
HA1-5114/883
HA4-5114/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
PACKAGE
14 Lead CerDIP
20 Lead Ceramic LCC
Pinouts
HA-5114/883
(CERDIP)
TOP VIEW
-IN1
HA-5114/883
(CLCC)
TOP VIEW
OUT 1
OUT 4
-IN4
18 +IN4
+ -
1
- +
4
17 NC
16 V-
2
+ -
9
-IN2
3
- +
15 NC
14 +IN3
10 11 12 13
OUT 2
OUT 3
-IN3
NC
NC
1
OUT 1
-IN1
+IN1
V+
+IN2
-IN2
OUT 2
1
2
3
4
5
6
7
+
3
-
-
1
+
-
4+
14 OUT 4
13 -IN4
+IN1
12 +IN4
11
V-
NC
V+
NC
+IN2
9
8
-IN3
OUT 3
4
5
6
7
8
3
2
20 19
+2
-
10 +IN3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2001, All Rights Reserved
1
File Number
511015-883
File Number
3712.1
Specifications HA-5114/883
Absolute Maximum Ratings
Voltage between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
(One Amplifier Shorted to Ground)
Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
θ
JC
Thermal Resistance
θ
JA
CerDIP Package . . . . . . . . . . . . . . . . . . .
75
o
C/W
20
o
C/W
Ceramic LCC Package . . . . . . . . . . . . . .
65
o
C/W
15
o
C/W
o
Package Power Dissipation Limit at +75 C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
to
±15V
V
INCM
≤
1/2 (V+ - V-)
R
L
≥
2kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current
+I
B
V
CM
= 0V, +R
S
= 10kΩ,
-R
S
= 100Ω
V
CM
= 0V, +R
S
= 100Ω,
-R
S
= 10kΩ
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 10kΩ
V+ = +3V, V- = -27V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-CMR
V+ = +27V, V- = -3V
1
2, 3
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= +5V,
V+ = +10V, V- = -20V,
V
OUT
= -5V
∆V
CM
= -5V,
V+ = +20V, V- = -10V,
V
OUT
= +5V
4
5, 6
4
5, 6
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-2.5
-3.0
-200
-325
-200
-325
-75
-125
+12
+12
-
-
100
100
100
100
86
86
86
86
MAX
2.5
3.0
200
325
200
325
75
125
-
-
-12
-12
-
-
-
-
-
-
-
-
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
-I
B
Input Offset Current
I
IO
Common Mode Range
+CMR
-A
VOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Spec Number
2
511015-883
Specifications HA-5114/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
-V
OUT1
R
L
= 2kΩ
1
2, 3
+V
OUT2
R
L
= 10kΩ
1
2, 3
-V
OUT2
R
L
= 10kΩ
1
2, 3
Output Current
+I
OUT
V
OUT
= -5V
1
2, 3
-I
OUT
V
OUT
= +5V
1
2, 3
Quiescent Power Supply
Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
∆V
SUP
= 10V,
V+ = +10V, V- = -15V
V+ = +20V, V- = -15V
∆V
SUP
= 10V,
V+ = +15V, V- = -10V
V+ = +15V, V- = -20V
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
10
10
-
-
12
12
-
-
10
10
-
-
-
-
-6.5
-7.5
86
86
86
86
MAX
-
-
-10
-10
-
-
-12
-12
-
-
-10
-10
6.5
7.5
-
-
-
-
-
-
UNITS
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
PARAMETERS
Output Voltage Swing
SYMBOL
+V
OUT1
CONDITIONS
R
L
= 2kΩ
-PSRR
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Parameters in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= 10V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Differential Input
Resistance
Input Noise Voltage
Input Noise Current
Gain Bandwidth Product
SYMBOL
R
IN
E
N
I
N
GBWP
CONDITIONS
V
CM
= 0V
R
S
= 20Ω,
f
O
= 1000Hz
R
S
= 2MΩ,
f
O
= 1000Hz
V
O
= 200mV,
f
O
= 30kHz
V
O
= 200mV,
f
O
= 1MHz
NOTES
1
1
1
1
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
250
-
-
34
40
MAX
-
6
3
-
-
UNITS
kΩ
nV/√Hz
pA/√Hz
MHz
MHz
Spec Number
3
511015-883
Specifications HA-5114/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= 10V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Slew Rate
SYMBOL
+SR
-SR
Full Power Bandwidth
Minimum Closed Loop
Stable Gain
Rise and Fall Time
FPBW
CLSG
t
R
t
F
Overshoot
+OS
-OS
Output Resistance
Quiescent Power
Consumption
Channel Separation
R
OUT
PC
CS
CONDITIONS
V
OUT
= -5V to +5V
V
OUT
= +5V to -5V
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
V
OUT
= 0V to +200mV
V
OUT
= 0V to -200mV
V
OUT
= 0V to +200mV
V
OUT
= 0V to -200mV
Open Loop
V
OUT
= 0V, I
OUT
=
0mA
R
S
= 1kΩ,
A
VCL
= 100V/V,
V
IN
= 100mV
PEAK
at
10kHz Referred to
Input
NOTES
1
1
1, 2
1
1, 4
1, 4
1
1
1
1, 3
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
MIN
12
12
191
10
-
-
-
-
-
-
55
MAX
-
-
-
-
100
100
40
40
270
225
-
UNITS
V/µs
V/µs
kHz
V/V
ns
ns
%
%
Ω
mW
dB
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
Spec Number
4
511015-883
HA-5114/883
Die Characteristics
DIE DIMENSIONS:
99.6 x 95.3 x 19 mils
±
1 mils
2530 x 2420 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ
±
2kÅ
Nitride Thickness: 3.5kÅ
±
1.5kÅ
WORST CASE CURRENT DENSITY:
1.43 x 10
5
A/cm
2
at 10mA
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
175
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5114/883
+IN2
V+
+IN1
-IN2
-IN1
OUT2
OUT1
OUT3
OUT4
-IN3
-IN4
+IN3
V-
+IN4
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Spec Number
5
511015-883
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