16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
SST39WF160x2.7V 16Mb (x16) MPF+ memories
Data Sheet
FEATURES:
• Organized as 1M x16
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 5 µA (typical)
– Auto Low Power Mode: 5 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39WF1602
– Bottom Block-Protection (bottom 32 KWord)
for SST39WF1601
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
• Latched Address and Data
• Fast Erase and Word-Program:
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 µs (typical)
• Automatic Write Timing
– Internal V
PP
Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pin Assignments and
Command Sets
• Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (5mm x 6mm)
– 48-ball WFBGA (4mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39WF1601/1602 devices are 1M x16 CMOS
Multi-Purpose Flash Plus (MPF+) manufactured with
SST’s proprietary, high-performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39WF1601/
1602 write (Program or Erase) with a 1.65-1.95V power
supply. These devices conform to JEDEC standard pin
assignments for x16 memories.
Featuring high performance Word-Program, the
SST39WF1601/1602 devices provide a typical Word-Pro-
gram time of 28 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
The SST39WF1601/1602 devices are suited for applica-
tions that require convenient and economical updating of
©2009 Silicon Storage Technology, Inc.
S71297-05-000
11/09
1
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than
alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super-
Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
technologies. These devices also improve flexibility while
lowering the cost for program, data, and configuration stor-
age applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
To meet high density, surface mount requirements, the
SST39WF1601/1602 are offered in both 48-ball TFBGA
and 48-ball WFBGA packages. See Figures 2 and 3 for
pin assignments.
Word-Program Operation
The SST39WF1601/1602 are programmed on a word-by-
word basis. Before programming, the sector where the
word exists must be fully erased. The Program operation is
accomplished in three steps. The first step is the three-byte
load sequence for Software Data Protection. The second
step is to load word address and word data. During the
Word-Program operation, the addresses are latched on the
falling edge of either CE# or WE#, whichever occurs last.
The data is latched on the rising edge of either CE# or
WE#, whichever occurs first. The third step is the internal
Program operation which is initiated after the rising edge of
the fourth WE# or CE#, whichever occurs first. The Pro-
gram operation, once initiated, will be completed within 40
µs. See Figures 5 and 6 for WE# and CE# controlled Pro-
gram operation timing diagrams and Figure 20 for flow-
charts. During the Program operation, the only valid reads
are Data# Polling and Toggle Bit. During the internal Pro-
gram operation, the host is free to perform additional tasks.
Any commands issued during the internal Program opera-
tion are ignored. During the command sequence, WP#
should be statically held high or low.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
The SST39WF1601/1602 also have the
Auto Low Power
mode which puts the device in a near standby mode after
data has been accessed with a valid Read operation. This
reduces the I
DD
active read current from typically 9 mA to
typically 5 µA. The Auto Low Power mode reduces the typi-
cal I
DD
active read current to the range of 2 mA/MHz of
Read cycle time. The device exits the Auto Low Power
mode with any address transition or control signal transition
used to initiate another Read cycle, with no access time
penalty. Note that the device does not enter Auto-Low
Power mode after power-up with CE# held steadily low,
until the first address transition or CE# is driven high.
Sector/Block-Erase Operation
The Sector- (or Block-) Erase operation allows the system
to erase the device on a sector-by-sector (or block-by-
block) basis. The SST39WF1601/1602 offer both Sector-
Erase and Block-Erase modes. The sector architecture is
based on uniform sector size of 2 KWord. The Block-Erase
mode is based on uniform block size of 32 KWord. The
Sector-Erase operation is initiated by executing a six-byte
command sequence with Sector-Erase command (30H)
and sector address (SA) in the last bus cycle. The Block-
Erase operation is initiated by executing a six-byte com-
mand sequence with Block-Erase command (50H) and
block address (BA) in the last bus cycle. The sector or block
address is latched on the falling edge of the sixth WE#
pulse, while the command (30H or 50H) is latched on the
rising edge of the sixth WE# pulse. The internal Erase
operation begins after the sixth WE# pulse. The End-of-
Erase operation can be determined using either Data#
Polling or Toggle Bit methods. See Figures 10 and 11 for
timing waveforms and Figure 24 for the flowchart. Any
commands issued during the Sector- or Block-Erase oper-
ation are ignored. When WP# is low, any attempt to Sector-
(Block-) Erase the protected block will be ignored. During
the command sequence, WP# should be statically held
high or low.
Read
The Read operation of the SST39WF1601/1602 is con-
trolled by CE# and OE#, both have to be low for the sys-
tem to obtain data from the outputs. CE# is used for
device selection. When CE# is high, the chip is dese-
lected and only standby power is consumed. OE# is the
output control and is used to gate data from the output
pins. The data bus is in high impedance state when
either CE# or OE# is high. Refer to the Read cycle timing
diagram for further details (Figure 4).
©2009 Silicon Storage Technology, Inc.
S71297-05-000
11/09
2
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
Erase-Suspend/Erase-Resume Commands
The Erase-Suspend operation temporarily suspends a
Sector- or Block-Erase operation thus allowing data to be
read from any memory location, or program data into any
sector/block that is not suspended for an Erase operation.
The operation is executed by issuing one byte command
sequence with Erase-Suspend command (B0H). The
device automatically enters read mode typically within 20
µs after the Erase-Suspend command had been issued.
Valid data can be read from any sector or block that is not
suspended from an Erase operation. Reading at address
location within erase-suspended sectors/blocks will output
DQ
2
toggling and DQ
6
at “1”. While in Erase-Suspend
mode, a Word-Program operation is allowed except for the
sector or block selected for Erase-Suspend.
To resume Sector-Erase or Block-Erase operation which has
been suspended the system must issue Erase Resume
command. The operation is executed by issuing one byte
command sequence with Erase Resume command (30H)
at any address in the last Byte sequence.
Write Operation Status Detection
The SST39WF1601/1602 provide two software means to
detect the completion of a Write (Program or Erase) cycle,
in order to optimize the system write cycle time. The soft-
ware detection includes two status bits: Data# Polling
(DQ
7
) and Toggle Bit (DQ
6
). The End-of-Write detection
mode is enabled after the rising edge of WE#, which ini-
tiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asyn-
chronous with the system; therefore, either a Data# Poll-
ing or Toggle Bit read may be simultaneous with the
completion of the write cycle. If this occurs, the system
may possibly get an erroneous result, i.e., valid data may
appear to conflict with either DQ
7
or DQ
6
. In order to pre-
vent spurious rejection, if an erroneous result occurs, the
software routine should include a loop to read the
accessed location an additional two (2) times. If both
reads are valid, then the device has completed the Write
cycle, otherwise the rejection is valid.
Chip-Erase Operation
The SST39WF1601/1602 provide a Chip-Erase operation,
which allows the user to erase the entire memory array to
the “1” state. This is useful when the entire device must be
quickly erased.
The Chip-Erase operation is initiated by executing a six-
byte command sequence with Chip-Erase command
(10H) at address 5555H in the last byte sequence. The
Erase operation begins with the rising edge of the sixth
WE# or CE#, whichever occurs first. During the Erase
operation, the only valid read is Toggle Bit or Data# Polling.
See Table 6 for the command sequence, Figure 10 for tim-
ing diagram, and Figure 24 for the flowchart. Any com-
mands issued during the Chip-Erase operation are
ignored. When WP# is low, any attempt to Chip-Erase will
be ignored. During the command sequence, WP# should
be statically held high or low.
Data# Polling (DQ
7
)
When the SST39WF1601/1602 are in the internal Pro-
gram operation, any attempt to read DQ
7
will produce the
complement of the true data. Once the Program operation
is completed, DQ
7
will produce true data. Note that even
though DQ
7
may have valid data immediately following the
completion of an internal Write operation, the remaining
data outputs may still be invalid: valid data on the entire
data bus will appear in subsequent successive Read
cycles after an interval of 1 µs. During internal Erase oper-
ation, any attempt to read DQ
7
will produce a ‘0’. Once the
internal Erase operation is completed, DQ
7
will produce a
‘1’. The Data# Polling is valid after the rising edge of fourth
WE# (or CE#) pulse for Program operation. For Sector-,
Block- or Chip-Erase, the Data# Polling is valid after the
rising edge of sixth WE# (or CE#) pulse. See Figure 7 for
Data# Polling timing diagram and Figure 21 for a flowchart.
©2009 Silicon Storage Technology, Inc.
S71297-05-000
11/09
3
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
Toggle Bits (DQ6 and DQ2)
During the internal Program or Erase operation, any con-
secutive attempts to read DQ
6
will produce alternating “1”s
and “0”s, i.e., toggling between 1 and 0. When the internal
Program or Erase operation is completed, the DQ
6
bit will
stop toggling. The device is then ready for the next opera-
tion. For Sector-, Block-, or Chip-Erase, the toggle bit (DQ
6
)
is valid after the rising edge of sixth WE# (or CE#) pulse.
DQ
6
will be set to “1” if a Read operation is attempted on an
Erase-Suspended Sector/Block. If Program operation is ini-
tiated in a sector/block not selected in Erase-Suspend
mode, DQ
6
will toggle.
An additional Toggle Bit is available on DQ
2
, which can be
used in conjunction with DQ
6
to check whether a particular
sector is being actively erased or erase-suspended. Table 1
shows detailed status bits information. The Toggle Bit
(DQ
2
) is valid after the rising edge of the last WE# (or CE#)
pulse of Write operation. See Figure 8 for Toggle Bit timing
diagram and Figure 21 for a flowchart.
TABLE 1: Write Operation Status
Status
Normal
Standard
Operation Program
Standard
Erase
Erase-
Suspend
Mode
Read from
Erase-Suspended
Sector/Block
Read from
Non- Erase-Suspended
Sector/Block
Program
Hardware Block Protection
The SST39WF1602 support top hardware block protec-
tion, which protects the top 32 KWord block of the device.
The SST39WF1601 support bottom hardware block pro-
tection, which protects the bottom 32 KWord block of the
device. The Boot Block address ranges are described in
Table 2. Program and Erase operations are prevented on
the 32 KWord when WP# is low. If WP# is left floating, it is
internally held high via a pull-up resistor, and the Boot
Block is unprotected, enabling Program and Erase opera-
tions on that block.
TABLE 2: Boot Block Address Ranges
Product
Bottom Boot Block
SST39WF1601
Top Boot Block
SST39WF1602
0F8000H-0FFFFFH
T2.0 1297
Address Range
000000H-007FFFH
DQ
7
DQ
7
#
0
1
DQ
6
Toggle
Toggle
1
DQ
2
No Toggle
Toggle
Toggle
Hardware Reset (RST#)
The RST# pin provides a hardware method of resetting the
device to read array data. When the RST# pin is held low
for at least T
RP,
any in-progress operation will terminate and
return to Read mode. When no internal Program/Erase
operation is in progress, a minimum period of T
RHR
is
required after RST# is driven high before a valid Read can
take place (see Figure 16).
The Erase or Program operation that has been interrupted
needs to be reinitiated after the device resumes normal
operation mode to ensure data integrity.
Data
Data
Data
DQ
7
#
Toggle
N/A
T1.0 1297
Note:
DQ
7
and DQ
2
require a valid address when reading
status information.
Software Data Protection (SDP)
The SST39WF1601/1602 provide the JEDEC approved
Software Data Protection scheme for all data alteration
operations, i.e., Program and Erase. Any Program opera-
tion requires the inclusion of the three-byte sequence. The
three-byte load sequence is used to initiate the Program
operation, providing optimal protection from inadvertent
Write operations, e.g., during the system power-up or
power-down. Any Erase operation requires the inclusion of
six-byte sequence. These devices are shipped with the
Software Data Protection permanently enabled. See Table
6 for the specific software command codes. During SDP
command sequence, invalid commands will abort the
device to read mode within T
RC.
The contents of DQ
15
-DQ
8
can be V
IL
or V
IH
, but no other value, during any SDP com-
mand sequence.
Data Protection
The SST39WF1601/1602 provide both hardware and soft-
ware features to protect nonvolatile data from inadvertent
writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a write cycle.
V
DD
Power Up/Down Detection: The Write operation is
inhibited when V
DD
is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvert-
ent writes during power-up or power-down.
©2009 Silicon Storage Technology, Inc.
S71297-05-000
11/09
4
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
Common Flash Memory Interface (CFI)
The SST39WF1601/1602 contain the CFI information to
describe the characteristics of the device. The
SST39WF1601/1602 support the original SST CFI Query
mode implementation for compatibility with existing SST
devices as well as the general CFI Query mode. Both will
be explained in subsequent paragraphs.
In order to enter the SST CFI Query mode, the system
must write the three-byte sequence, same as the product
ID entry command with 98H (CFI Query command) to
address 5555H in the last byte sequence. Once the device
enters CFI Query mode, the system can read CFI data at
the addresses given in Tables 7 through 9. The system
must write the CFI Exit command to return to Read mode
from the CFI Query mode.
In order to enter the general CFI Query mode, the system
must write a one-byte sequence with entry command with
98H to address 55H. Once the device enters the CFI
Query mode, the system can read CFI data at the
addresses given in Tables 7 through 9. The system must
write the CFI Exit command to return to Read mode from
the CFI Query mode.
Product Identification Mode Exit/
CFI Mode Exit
In order to return to the standard Read mode, the Software
Product Identification mode must be exited. Exit is accom-
plished by issuing the Software ID Exit command
sequence, which returns the device to the Read mode.
This command may also be used to reset the device to the
Read mode after any inadvertent transient condition that
apparently causes the device to behave abnormally, e.g.,
not read correctly. Please note that the Software ID Exit/
CFI Exit command is ignored during an internal Program or
Erase operation. See Table 6 for software command
codes, Figure 14 for timing waveform, and Figures 22 and
23 for flowcharts.
Security ID
The SST39WF1601/1602 devices offer a 256-bit Security
ID space. The Secure ID space is divided into two 128-bit
segments - one factory programmed segment and one
user programmed segment. The first segment is pro-
grammed and locked at SST with a random 128-bit num-
ber. The user segment is left un-programmed for the
customer to program as desired.
To program the user segment of the Security ID, the user
must use the Security ID Word-Program command. To
detect end-of-write for the SEC ID, read the toggle bits. Do
not use Data# Polling. Once this is complete, the Sec ID
should be locked using the User Sec ID Program Lock-Out.
This disables any future corruption of this space. Note that
regardless of whether or not the Sec ID is locked, neither
Sec ID segment can be erased.
The Secure ID space can be queried by executing a three-
byte command sequence with Enter Sec ID command
(88H) at address 5555H in the last byte sequence. To exit
this mode, the Exit Sec ID command should be executed.
Refer to Table 6 for more details.
Product Identification
The Product Identification mode identifies the devices as
the SST39WF1601, SST39WF1602 and manufacturer as
SST. This mode may be accessed software operations.
Users may use the Software Product Identification opera-
tion to identify the part (i.e., using the device ID) when
using multiple manufacturers in the same socket. For
details, see Table 6 for software operation, Figure 12 for
the Software ID Entry and Read timing diagram and Fig-
ure 22 for the Software ID Entry command sequence
flowchart.
TABLE 3: Product Identification
Address
Manufacturer’s ID
Device ID
SST39WF1601
SST39WF1602
0001H
0001H
BF274B
BF274A
T3.0 1297
Data
BFH
0000H
©2009 Silicon Storage Technology, Inc.
S71297-05-000
11/09
5
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