1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
The SST26WF032 Serial Quad I/O™ (SQI™) flash device utilizes a 4-bit mul-
tiplexed I/O serial interface to boost performance while maintaining the com-
pact form factor of standard serial flash devices. Operating at frequencies
reaching 80 MHz, the SST26WF032 enables minimum latency execute-in-
place (XIP) capability without the need for code shadowing on an SRAM. The
device’s high performance and small footprint make it the ideal choice for
mobile handsets, Bluetooth headsets, optical disk drives, GPS applications
and other portable electronic products. Further benefits are achieved with
SST’s proprietary, high-performance CMOS SuperFlash® technology, which
significantly improves performance and reliability, and lowers power consump-
tion for high bandwidth, compact designs.
Features:
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Four 8 KByte top and bottom parameter overlay blocks
– Two 32 KByte top and bottom overlay blocks
– Uniform 64 KByte overlay blocks
- SST26WF032 – 62 blocks
• Serial Interface Architecture
– Nibble-wide multiplexed I/O’s with SPI-like serial com-
mand structure
- Mode 0 and Mode 3
– Single-bit, SPI backwards compatible
- Read, High-Speed Read, and JEDEC ID Read
• Write-Suspend
– Suspend Program or Erase operation to access another
block/sector
• High Speed Clock Frequency
– 80 MHz
- 320 Mbit/s sustained data rate
• Software Reset (RST) mode
• Software Write Protection
– Individual Block-Locking
- 64 KByte blocks, two 32 KByte blocks, and eight 8
KByte parameter blocks
– Write Lock, Read Lock, and Lockdown options
• Burst Modes
– Continuous linear burst
– 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
– Endurance: 100,000 Cycles
– Greater than 100 years Data Retention
• Security ID
– One-Time Programmable (OTP) 256 bit, Secure ID
- 64 bit unique, factory pre-programmed identifier
- 192 bit user-programmable
• Low Power Consumption:
– Active Read current: 12 mA (typical @ 80 MHz)
– Standby Current: 8 µA (typical)
• Temperature Range
– Industrial: -40°C to +85°C
• Fast Erase and Byte-Program:
– Chip-Erase time: 35 ms (typical)
– Sector-/Block-Erase time: 18 ms (typical)
• Packages Available
– 8-contact WSON (6mm x 5mm)
– 8-lead SOIC (200 mil)
• Page-Program
– 256 Bytes per page
– Fast Page Program time in 1 ms (typical)
• All devices are RoHS compliant
• End-of-Write Detection
– Software polling the BUSY bit in status register
©2010 Silicon Storage Technology, Inc.
www.sst.com
S71409-01-000
01/10
1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory devices features a 4-bit, multiplexed I/O inter-
face that allows for low-power, high-performance operation in a low pin-count package. System
designs using SQI flash devices occupy less board space and ultimately lower system costs.
All members of the 26 Series, SQI family are manufactured with SST proprietary, high-performance
CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain bet-
ter reliability and manufacturability compared with alternate approaches.
The SST26WF032 significantly improves performance and reliability, while lowering power consump-
tion. This device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy
consumed is a function of the applied voltage, current, and time of application. Since for any given volt-
age range, the SuperFlash technology uses less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program operation is less than alternative flash memory
technologies.
SST26WF032 is offered in both 8-contact WSON (6 mm x 5 mm), and 8-lead SOIC (200 mil) pack-
ages. See Figure 2 for pin assignments.
©2010 Silicon Storage Technology, Inc.
S71409-01-000
01/10
2
1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
Pin Description
CE#
SO/SIO1
SIO2
VSS
1
2
8
7
VDD
SIO3
SCK
SI/SIO0
CE#
SO/SIO1
SIO2
VSS
1
8
VDD
SIO3
SCK
SI/SIO0
2
7
Top View
3
4
6
5
3
Top View
6
4
5
1409 08-soic S2A P1.0
1409 08-wson QA P1.0
8-Lead SOIC
8-Contact WSON
Figure 2:
Pin Description for 8-lead SOIC and 8-contact WSON
Table 1:
Pin Description
Symbol
SCK
Pin Name
Serial Clock
Functions
To provide the timing of the serial interface.
Commands, addresses, or input data are latched on the rising edge of the
clock input, while output data is shifted out on the falling edge of the clock
input.
To transfer commands, addresses, or data serially into the device or data out
of the device. Inputs are latched on the rising edge of the serial clock. Data is
shifted out on the falling edge of the serial clock. The EQIO command
instruction configures these pins for Quad I/O mode.
To transfer commands, addresses or data serially into the device. Inputs are
latched on the rising edge of the serial clock. SI is the default state after a
power on reset.
SIO[3:0]
Serial Data
Input/Output
SI
Serial Data Input
for SPI mode
SO
CE#
Serial Data Output To transfer data serially out of the device. Data is shifted out on the falling
for SPI mode
edge of the serial clock. SO is the default state after a power on reset.
Chip Enable
The device is enabled by a high to low transition on CE#. CE# must remain
low for the duration of any command sequence; or in the case of Write oper-
ations, for the command/data input sequence.
To provide power supply voltage: 1.65-1.95V
T1.0 1409
V
DD
V
SS
Power Supply
Ground
©2010 Silicon Storage Technology, Inc.
S71409-01-000
01/10
4
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