Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
The SST26VF016 / SST26VF032 Serial Quad I/O™ (SQI™) flash device uti-
lizes a 4-bit multiplexed I/O serial interface to boost performance while main-
taining the compact form factor of standard serial flash devices. Operating at
frequencies reaching 80 MHz, the SST26VF016 / SST26VF032 enables mini-
mum latency execute-in-place (XIP) capability without the need for code shad-
owing on an SRAM. The device’s high performance and small footprint make it
the ideal choice for mobile handsets, Bluetooth® headsets, optical disk drives,
GPS applications and other portable electronic products. Further benefits are
achieved with SST’s proprietary, high-performance CMOS SuperFlash® tech-
nology, which significantly improves performance and reliability, and lowers
power consumption for high bandwidth, compact designs.
Features
• Single Voltage Read and Write Operations
– 2.7-3.6V
• End-of-Write Detection
– Software polling the BUSY bit in status register
• Serial Interface Architecture
– Nibble-wide multiplexed I/O’s with SPI-like serial com-
mand structure
- Mode 0 and Mode 3
– Single-bit, SPI backwards compatible
- Read, High-Speed Read, and JEDEC ID Read
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Four 8 KByte top parameter overlay blocks
– Four 8 KByte bottom parameter overlay blocks
– Two 32 KByte overlay blocks (one each top and bottom)
– Uniform 64 KByte overlay blocks
- SST26VF016 – 30 blocks
- SST26VF032 – 62 blocks
• High Speed Clock Frequency
– 80 MHz
- 320 Mbit/s sustained data rate
• Write-Suspend
– Suspend program or Erase operation to access another
block/sector
• Burst Modes
– Continuous linear burst
– 8/16/32/64 Byte linear burst with wrap-around
• Software Reset (RST) mode
• Software Write Protection
– Block-Locking
- 64 KByte blocks, two 32 KByte blocks, and eight 8
KByte parameter blocks
• Index Jump
– Jump to address index within 256 Byte Page
– Jump to address index within 64 KByte Block
– Jump to address index in another 64 KByte Block
• Superior Reliability
– Endurance: 100,000 cycles
– Greater than 100 years data retention
• Security ID
– One-Time Programmable (OTP) 256 bit, Secure ID
- 64 bit Unique, factory pre-programmed identifier
- 192 bit user-programmable
• Low Power Consumption:
– Active Read current: 12 mA (typical @ 80 MHz)
– Standby current: 8 µA (typical)
• Temperature Range
– Industrial: -40°C to +85°C
• Fast Erase and Byte-Program:
– Chip-Erase time: 35 ms (typical)
– Sector-/Block-Erase time: 18 ms (typical)
• Packages Available
– 8-contact WSON (6mm x 5mm)
– 8-lead SOIC (200 mil)
• Page-Program
– 256 Bytes per page
– Fast Page Program time in 1 ms (typical)
• All devices are RoHS compliant
©2010 Silicon Storage Technology, Inc.
www.sst.com
S71359-05-000
06/10
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory devices features a 4-bit, multiplexed I/O inter-
face that allows for low-power, high-performance operation in a low pin-count package. System
designs using SQI flash devices occupy less board space and ultimately lower system costs.
All members of the 26 Series, SQI family are manufactured with SST proprietary, high-performance
CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain bet-
ter reliability and manufacturability compared with alternate approaches.
The SST26VF016/032 significantly improve performance and reliability, while lowering power con-
sumption. These devices write (Program or Erase) with a single power supply of 2.7-3.6V. The total
energy consumed is a function of the applied voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses less current to program and has a shorter erase
time, the total energy consumed during any Erase or Program operation is less than alternative flash
memory technologies.
SST26VF016/032 are offered in both 8-contact WSON (6 mm x 5 mm), and 8-lead SOIC (200 mil)
packages. See Figure 2 for pin assignments.
©2010 Silicon Storage Technology, Inc.
S71359-05-000
06/10
2
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
Pin Description
CE#
SO/SIO1
SIO2
VSS
1
2
8
7
VDD
SIO3
SCK
SI/SIO0
CE#
SO/SIO1
SIO2
VSS
1
8
VDD
SIO3
SCK
SI/SIO0
2
7
Top View
3
4
6
5
3
Top View
6
4
5
1359 08-soic S2A P1.0
1359 08-wson QA P1.0
8-Lead SOIC
8-Contact WSON
Figure 2:
Pin Description for 8-lead SOIC and 8-contact WSON
Table 1:
Pin Description
Symbol
SCK
Pin Name
Serial Clock
Functions
To provide the timing of the serial interface.
Commands, addresses, or input data are latched on the rising edge of the
clock input, while output data is shifted out on the falling edge of the clock
input.
To transfer commands, addresses, or data serially into the device or data out
of the device. Inputs are latched on the rising edge of the serial clock. Data is
shifted out on the falling edge of the serial clock. The EQIO command
instruction configures these pins for Quad I/O mode.
To transfer commands, addresses or data serially into the device. Inputs are
latched on the rising edge of the serial clock. SI is the default state after a
power on reset.
SIO[3:0]
Serial Data
Input/Output
SI
Serial Data Input
for SPI mode
SO
CE#
Serial Data Output To transfer data serially out of the device. Data is shifted out on the falling
for SPI mode
edge of the serial clock. SO is the default state after a power on reset.
Chip Enable
The device is enabled by a high to low transition on CE#. CE# must remain
low for the duration of any command sequence; or in the case of Write oper-
ations, for the command/data input sequence.
To provide power supply voltage: 2.7-3.6V
T1.0 1359
V
DD
V
SS
Power Supply
Ground
©2010 Silicon Storage Technology, Inc.
S71359-05-000
06/10
4
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