TO
-92
BT169 series
Thyristors logic level
Rev. 5 — 30 September 2011
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features and benefits
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
General purpose switching and phase control applications.
1.4 Quick reference data
V
DRM
, V
RRM
200 V (BT169B)
V
DRM
, V
RRM
400 V (BT169D)
V
DRM
, V
RRM
600 V (BT169G)
I
T(RMS)
0.8 A
I
T(AV)
0.5 A
I
TSM
8 A
2. Pinning information
Table 1.
Pin
1
2
3
Discrete pinning
Description
anode (a)
gate (g)
cathode (k)
A
G
sym037
Simplified outline
Symbol
K
321
SOT54 (TO-92)
NXP Semiconductors
BT169 series
Thyristor logic level
3. Ordering information
Table 2.
Ordering information
Package
Name
BT169B
BT169D
BT169G
-
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
, V
RRM
Parameter
repetitive peak off-state voltages
BT169B
BT169D
BT169G
I
T(AV)
average on-state current
half sine wave;
T
lead
83
C;
see
Figure 1
all conduction angles;
see
Figure 4
and
5
half sine wave;
T
j
= 25
C
prior to
surge;
see
Figure 2
and
3
t = 10 ms
t = 8.3 ms
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
[1]
Conditions
Min
-
-
-
-
Max
200
400
600
0.5
Unit
V
V
V
A
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
-
0.8
A
-
-
-
-
-
-
-
-
8
9
0.32
50
1
5
5
2
0.1
+150
125
A
A
A
2
s
A/s
A
V
V
W
W
C
C
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/s
over any 20 ms period
-
40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
BT169_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
2 of 13
NXP Semiconductors
BT169 series
Thyristor logic level
0.8
P
tot
(W)
0.6
2.2
2.8
0.4
4
a=
1.57
1.9
001aab446
77
T
lead(max)
(°C)
89
101
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
0.5
I
T(AV)
(A)
113
α
0.2
0
0
0.1
0.2
0.3
0.4
125
0.6
a = form factor = I
T(RMS)
/I
T(AV)
.
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
10
I
TSM
(A)
8
001aab499
6
4
I
T
I
TSM
2
t
t
p
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values.
BT169_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
3 of 13
NXP Semiconductors
BT169 series
Thyristor logic level
10
3
I
TSM
(A)
10
2
I
T
001aab497
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
1
10
−5
10
−4
10
−3
t
p
(s)
10
−2
t
p
10 ms.
Fig 3.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
values.
2
001aab449
1
I
T(RMS)
(A)
0.8
001aab450
I
T(RMS)
(A)
1.5
(1)
0.6
1
0.4
0.5
0.2
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
83
C.
(1) T
lead
= 83
C.
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents.
Fig 5. RMS on-state current as a function of lead
temperature; maximum values.
BT169_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
4 of 13
NXP Semiconductors
BT169 series
Thyristor logic level
5. Thermal characteristics
Table 4.
Symbol
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to printed-circuit board mounted;
ambient
lead length = 4 mm
Conditions
Min
-
-
Typ
-
150
Max
60
-
Unit
K/W
K/W
10
2
Z
th(j-lead)
(K/W)
10
001aab451
1
P
δ
=
t
p
T
10
−1
t
p
T
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6.
Transient thermal impedance as a function of pulse width.
BT169_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 30 September 2011
5 of 13
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