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1N660A

产品描述DIODE 0.5A 2DIE
产品类别分立半导体    二极管   
文件大小50KB,共1页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
下载文档 详细参数 选型对比 全文预览

1N660A概述

DIODE 0.5A 2DIE

1N660A规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
Reach Compliance Codeunknown

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^ani-donauatoi ZPioduati, {Jna.
20 STERN AVE.
SPRINQRELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N659-1N660-1N661
GENERAL PURPOSE
DIFFUSED SILICON PLANAR* DIODES
Vp ... 1.0 V (MAX)
9
6.0 mA
t
r r
... 30Q rw (MAX)
ABSOLUTE MAXIMUM RATINGS (Now 1)
Maximum Temperatures
Storege Temperature
Operating Junction Temperature
Maximum Power Dissipation (Notes 2 & 3)
Total Dissipation at 25* C Ambiant Temperatura
Linear Derating Factor
Maximum Voltage and Currant!
WIV
Working Invaria Voltaga
IQ
Average Rectified Currant
Ip
Forward Currant Steady Stata
if,
. Peak Forward Surge Currant
'
v
Pulse Width -1.0s
Pulsa Width -1.0 MI
1N669
50 V
175mA
400mA
500mA
4.0A
-86°C to +200'C
175*C
400 mW
2.87 mW/*C
iMeeo
100V
175mA
400mA
500mA
4.0A
1N681
200V
175mA
400mA
500mA
4.0A
ELECTRICAL CHARACTERISTICS (26"C Ambient Temperature unless otherwise noted)
SYMBOL
CHARACTERISTIC
Forward Voltage
Reverse Current
1N659
MIN. MAX.
1N660
MIN.
MAX.
1N661
MIN. MAX.
1.0
UNITS
TEST CONDITIONS
VF
(R
1.0
5.0
1.0
6.0
10
25
50
100
8V
«rr
Breakdown Voltage
Reverse Recovery Time
V
MA
MA
MA
MA
MA
MA
V
60
300
120
300
240
300
ns
Ip - 6.0 mA
V
R
-60V
VR-100V
VR - 200 V
VR"50V,T
A
-100°C
VR-100V,T
A
"100°C
VR-200V,T
A
-100'C
IR-100MA
V
r
- 36 V, If - 30 mA, R
L
- 2.0 kO,
C|_ - 10 pF, Recovery to 400 kfl
u
NOTES:
L
(
1
J
MILLIMETER DIMENSIONS ARC DERIVED FROM ORIGINAL INCH DIME*.
SYMBOL
<8
»D
G
L
L
l
INCHES
MIN.
.011
MILLIMETERS
MAX.
0.558
1.71
7.62
MAX . • MIN.
NOTES
.085
.230
1.000
-
.02?
.107
.300
-
.050
O.I4SI
2.16
5.85
25. ' O
(
-
1
1
-
2
PACKAGE CONTOUR O P T I O N A L W I T H I N C Y L I N D E R OF DIAMETER ID AND
LENGTH G. SLUGS, IF ANY, SHALL BE INCLUDED W I T M I M THIS
C Y L I N D E R BUT SMALL NOT
K
SUBJECT TO THE M I N I M U M L I M I T OF «0.
LEAD D I A M E T E R NOT CONTROLLED IN THIS ZONE.TO A L L O W FOR FLASH,
LEAD F I N I S H BUILD-UP, AND MINOR I R R C G U L A R I T I E S OTHER THAN
SLUCS.
-
1.27
-
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information, furnished hy NJ Semi-Conductors is believed to he both accurate mid reliable at the time of going to press. However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N.I Semi-Conductors encourages
customer? n> venfv that datasheets are current hetore placing orders.

1N660A相似产品对比

1N660A 5512-62SA-02 1N661A
描述 DIODE 0.5A 2DIE D Subminiature Connector, 62 Contact(s), Female, 0.095 inch Pitch, Solder Terminal, Locking, DIODE 0.5A 2DIE
Reach Compliance Code unknown compliant unknown
厂商名称 New Jersey Semiconductor - New Jersey Semiconductor

 
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