CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
Features
•
•
•
•
•
•
•
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
External Creepage
≥
7.5mm (S/SL Type)
External Creepage
≥
8.0mm (SLM Type)
Operating Temperature range - 55 ° to 110 °C
C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT814 series consists of a phototransistor
optically coupled to two gallium arsenide
Infrared-emitting diode, connected in inverse
parallel, in a 4-lead DIP package with bending
options.
Applications
•
•
•
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Apr, 2015
CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
P
TOT
T
OPR
T
STG
T
SOL
Isolation voltage
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Parameters
Ratings
5000
200
-55 ~ +110
-55 ~ +150
260
Units
V
RMS
mW
o
C
o
C
o
C
Notes
Emitter
I
F(TRANS)
P
D
Peak transient current
(≤1µs P.W,300pps)
±
I
F
Forward current
60
1
mA
A
mW
Emitter power dissipation
100
Detector
P
D
B
VCEO
B
VECO
I
C
Detector power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
150
80
6
50
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Apr, 2015
CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
C
IN
Parameters
Forward voltage
Input Capacitance
A
= 25° (unless otherwise specified)
C
Test Conditions
I
F
=±10mA
f= 1MHz
Min
-
-
Typ
1.24
30
Max
1.4
-
Units
V
pF
Notes
Detector Characteristics
Symbol
B
VCEO
B
VECO
I
CEO
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CE
= 20V, I
F
=0mA
Min
80
6
-
Typ
-
-
-
Max
-
-
100
Units
V
V
nA
Notes
Transfer Characteristics
Symbol
Parameters
CT814
Test Conditions
Min
20
Typ
-
-
-
-
0.04
-
0.5
Max
300
150
300
1.3
0.2
-
1
Units
Notes
CTR
Current Transfer Ratio
CT814A
CT814B
I
F
= ±1mA, V
CE
= 5V
50
100
%
CTR Symmetry
Collector-Emitter Saturation
I
F
= ±1mA, V
CE
= 5V
±
0.7
-
5x10
10
-
V
CE(SAT)
R
IO
C
IO
I
F
=
20mA, I
C
= 1mA
V
Voltage
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
pF
Switching Characteristics
Symbol
t
r
t
f
Rise Time
Fall Time
Parameters
Test Conditions
Min
-
Typ
6
8
Max
-
Units
µs
Notes
CT Micro
Proprietary & Confidential
Page 3
Ω
I
C
= 2mA, V
CE
= 2V, R
L
= 100
-
-
Rev 2
Apr, 2015
CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Rev 2
Apr, 2015
CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
CT Micro
Proprietary & Confidential
Page 5
Rev 2
Apr, 2015
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
