Rad-Hard 16 Channel BiCMOS Analog Multiplexer with
High-Z Analog Input Protection
HS-1840ARH, HS-1840AEH,
HS-1840BRH, HS-1840BEH
The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are
radiation hardened, monolithic 16 channel multiplexers constructed
with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric
Isolation process. They are designed to provide a high input impedance
to the analog source if device power fails (open), or the analog signal
voltage inadvertently exceeds the supply by up to
±35V,
regardless of
whether the device is powered on or off. Excellent for use in redundant
applications, since the secondary device can be operated in a standby
unpowered mode affording no additional power drain. More
significantly, a very high impedance exists between the active and
inactive devices preventing any interaction. One of sixteen channel
selections is controlled by a 4-bit binary address plus an Enable-Inhibit
input which conveniently controls the ON/OFF operation of several
multiplexers in a system. All inputs have electrostatic discharge
protection. The HS-1840ARH, HS-1840AEH, HS-1840BRH and
HS-1840BEH are processed and screened in full compliance with
MIL-PRF-38535 and QML standards. The devices are available in a
28 Ld SBDIP and a 28 Ld Ceramic Flatpack.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in
SMD 5962-95630. A “hot-link” is provided on our homepage for
downloading:
http://www.landandmaritime.dla.mil/Downloads/MilSpec/Smd/956
30.pdf
Features
• Electrically Screened to SMD # 5962-95630
• QML Qualified per MIL-PRF-38535 Requirements
• Pin-to-Pin for Intersil’s HS-1840RH and HS-1840/883S
• Improved Radiation Performance
- Gamma Dose (γ) 3x10
5
RAD(Si)
• Improved r
DS(ON)
Linearity
• Improved Access Time 1.5µs (Max) Over Temp and Post Rad
• High Analog Input Impedance 500MΩ During Power Loss (Open)
•
±35V
Input Overvoltage Protection (Power On or Off)
• Dielectrically Isolated Device Islands
• Excellent in Hi-Rel Redundant Systems
• Break-Before-Make Switching
• No Latch-Up
April 6, 2012
FN4355.5
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas Inc. 2002, 2009-2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH
Ordering Information
ORDERING
NUMBER
5962F9563002QXC
5962F9563002QYC
5962F9563002VXC
5962F9563002VYC
HS1-1840ARH/PROTO
HS9-1840ARH/PROTO
HS1-1840ARH-T
5962F9563002V9A
5962F9563004V9A
5962F9563004VXC
5962F9563004VYC
5962F9563005V9A
5962F9563005VXC
5962F9563005VYC
5962F9563003QXC
5962F9563003QYC
5962F9563003VXC
5962F9563003VYC
HS1-1840BRH/PROTO
HS9-1840BRH/PROTO
5962F9563003V9A
INTERNAL
MKT. NUMBER
(Note)
HS1-1840ARH-8
HS9-1840ARH-8
HS1-1840ARH-Q
HS9-1840ARH-Q
HS1-1840ARH/PROTO
HS9-1840ARH/PROTO
HS1-1840ARH-T
HS0-1840ARH-Q
HS0-1840AEH-Q
HS1-1840AEH-Q
HS9-1840AEH-Q
HS0-1840BEH-Q
HS1-1840BEH-Q
HS9-1840BEH-Q
HS1-1840BRH-8
HS9-1840BRH-8
HS1-1840BRH-Q
HS9-1840BRH-Q
HS1-1840BRH/PROTO
HS9-1840BRH/PROTO
HS0-1840BRH-Q
TEMP. RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
Q 5962F95 63005VXC
Q 5962F95 63005VYC
Q 5962F95 63003QXC
Q 5962F95 63003QYC
Q 5962F95 63003VXC
Q 5962F95 63003VYC
HS1- 1840BRH /PROTO
HS9- 1840BRH /PROTO
28 Ld SBDIP
28 Ld Flatpack
28 Ld SBDIP
28 Ld Flatpack
28 Ld SBDIP
28 Ld Flatpack
28 Ld SBDIP
28 Ld Flatpack
Q 5962F95 63004VXC
Q 5962F95 63004VYC
28 Ld SBDIP
28 Ld Flatpack
PART
MARKING NO.
Q 5962F95 63002QXC
Q 5962F95 63002QYC
Q 5962F95 63002VXC
Q 5962F95 63002VYC
HS1- 1840ARH /PROTO
HS9- 1840ARH /PROTO
Q 5962R95 63002TXC
PACKAGE
(RoHS Compliant)
28 Ld SBDIP
28 Ld Flatpack
28 Ld SBDIP
28 Ld Flatpack
28 Ld SBDIP
28 Ld Flatpack
28 Ld SBDIP
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with
both SnPb and Pb-free soldering operations.
Pin Configurations
HS1-1840ARH, HS1-1840AEH, HS1-1840BRH
(28 LD SBDIP) CDIP2-T28
TOP VIEW
+V
S
1
NC 2
NC 3
IN 16 4
IN 15 5
IN 14 6
IN 13 7
IN 12 8
IN 11 9
IN 10 10
IN 9 11
GND 12
(+5V
S
) V
REF
13
ADDR A3 14
28 OUT
27 -V
S
26 IN 8
25 IN 7
24 IN 6
23 IN 5
22 IN 4
21 IN 3
20 IN 2
19 IN 1
18 ENABLE
17 ADDR A0
16 ADDR A1
15 ADDR A2
+V
S
NC
NC
IN 16
IN 15
IN 14
IN 13
IN 12
IN 11
IN 10
IN 9
GND
(+5V
S
) V
REF
ADDR A3
HS9-1840ARH, HS9-1840AEH, HS9-1840BRH
(28 LD FLATPACK) CDFP3-F28
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OUT
-V
S
IN 8
IN 7
IN 6
IN 5
IN 4
IN 3
IN 2
IN 1
ENABLE
ADDR A0
ADDR A1
ADDR A2
2
FN4355.5
April 6, 2012
HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH
Burn-In/Life Test Circuits
R
+V
S
R
1
2
3
4
5
6
7
8
9
10
GND
F4
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
F1
F2
F3
F5
GND
V
R
R
-V
S
+V
S
R
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
R
-V
S
R
R
NOTE:
V
S
+ = +15.5V ±0.5V, V
S
- = -15.5V ±0.5V.
R = 1kΩ ±5%.
C
1
= C
2
= 0.01µF ±10%, 1 EACH PER SOCKET, MINIMUM.
D
1
= D
2
= 1N4002, 1 EACH PER BOARD, MINIMUM.
INPUT SIGNALS:
SQUARE WAVE, 50% DUTY CYCLE, 0V TO 15V PEAK ±10%.
F1 = 100kHz; F2 = F1/2; F3 = F1/4; F4 = F1/8; F5 = F1/16.
NOTE:
R = 1kΩ ±5%, 1/4W.
C
1
= C
2
= 0.01µF MINIMUM, 1 EACH PER SOCKET, MINIMUM.
V
S
+ = 15.5V ±0.5V, V
S
- = -15.5V ±0.5V, V
R
= 15.5 ±0.5V
FIGURE 1. DYNAMIC BURN-IN AND LIFE TEST CIRCUIT
NOTES:
1. The above test circuits are utilized for all package types.
2. The Dynamic Test Circuit is utilized for all life testing.
FIGURE 2. .STATIC BURN-IN TEST CIRCUIT
Irradiation Circuit
HS-1840ARH, HS-1840AEH, HS-1840BRH
+15V
NC
NC
+1V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
+5V
28
27
26
25
24
23
22
21
20
19
18
17
16
15
-15V
1kΩ
NOTE:
3. All irradiation testing is performed in the 28 lead CERDIP package.
4
FN4355.5
April 6, 2012
HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH
Die Characteristics
DIE DIMENSIONS:
(2820µmx4080µm x 483µm
±25.4μm)
111 milsx161 milsx19 mils
±1
mil
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 8.0k
Å
±1k
Å
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
Å
±2k
Å
Backside Finish:
Silicon
ADDITIONAL INFORMATION:
Worst Case Current Density:
Modified SEM
Transistor Count:
407
Process:
Radiation Hardened Silicon Gate,
DI Wafer, Dielectric Isolation
Metallization Mask Layout
HS-1840ARH, HS-1840BRH
IN7
IN6
IN5
IN4
IN3
IN2
IN1
IN8
ENABLE
A0
-V
A1
OUT
A2
+V
A3
V
REF
IN16
GND
IN15
IN14
IN13
IN12
5
IN10
IN11
IN9
FN4355.5
April 6, 2012
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
