QTLP660CIR
1.8mm DOME LENS
EMITTING DIODE
QTLP660CIR
PACKAGE DIMENSIONS
Ø0.075 (1.9)
Ø0.067 (1.7)
0.134 (3.40)
0.118 (3.00)
0.102 (2.6)
0.087 (2.2)
0.091 (2.3)
0.083 (2.1)
TOP
R0.004 (0.1)
5°
0.024 (0.6)
0.016 (0.4)
7°
0.106 (2.7)
0.098 (2.5)
0.028 (0.7)
0.020 (0.5)
SIDE
0.079 (2.0)
BOTTOM
POLARITY
NOTE:
Dimensions for all drawings are in inches (mm).
FEATURES
•
•
•
•
•
•
1.8mm Dome Lens Package
Available in 0.315” (8mm) width tape on 7” (178mm) diameter reel; 2,000 units per reel
Narrow Emission Angle, 30°
Wavelength = 940 nm, GaAs
Water Clear Lens
Matched Photosensor: QTLP660CPDF
© 2003 Fairchild Semiconductor Corporation
+
Page 1 of 7
-
3/5/03
QTLP660CIR
1.8mm DOME LENS
EMITTING DIODE
QTLP660CIR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(1,2,3)
Soldering Temperature (Flow)
(1,2)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(4)
Peak Forward Current (Pulse width = 100µs, Duty Cycle=1%)
Notes:
1. RMA flux is recommended.
2. Methanol or isopropyl alcohols are recommended as cleaning agents.
3. Soldering iron tip at 1/16" (1.6mm) from housing
4. At 25°C or below
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
I
FD
Rating
-40 to +85
-40 to +90
240 for 5 sec
260 for 10 sec
65
5
130
1.0
Unit
°C
°C
°C
°C
mA
V
mW
A
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C)
PARAMETER
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 100 mA, t
P
= 100 µs, Duty Cycle = 0.01
I
F
= 1 A, t
P
= 100 µs, Duty Cycle = 0.01
V
R
= 5 V
I
F
= 20 mA
I
F
= 100 mA, t
P
= 100 µs, Duty Cycle = 0.01
I
F
= 1 A, t
P
= 100 µs, Duty Cycle = 0.01
I
F
= 100 mA,
t
P
= 20 ms
t
r
t
f
Ee
I
R
V
F
TEST CONDITIONS
SYMBOL
λ
P
Θ
MIN.
—
—
—
—
—
—
1.0
—
—
—
—
TYP.
940
±15
1.2
1.4
2.6
—
3.0
14
140
1
1
MAX.
—
—
1.5
1.85
4.0
100
—
—
—
—
—
µs
µs
mW/sr
µA
V
UNITS
nm
Deg.
© 2003 Fairchild Semiconductor Corporation
Page 2 of 7
3/5/03
QTLP660CIR
1.8mm DOME LENS
EMITTING DIODE
QTLP660CIR
TYPICAL PERFORMANCE CURVES
Fig. 1 Forward Current vs.
Ambient Temperature
140
120
100
80
60
40
20
0
-25
Fig. 2 Relative Radiant Intensity vs.
Wavelength
100
Relative Radiant Intensity (%)
Forward Current I
F
(mA)
I
F
= 20 mA
T
A
= 25˚C
80
60
40
20
0
20
40
60
80
100
0
880 900 920 940 960 980 1000 1020 1040
Ambient Temperature (°C)
Wavelengthl
λ
(nm)
Fig. 3 Peak Emission Wavelength vs.
Ambient Temperature
Peak Emission Wavelength (nm)
980
10
4
Fig. 4 Forward Current vs.
Forward Voltage
960
Forward Current I
F
(mA)
tp=100µs
Duty Cycle=0.01
10
3
940
920
10
2
900
-25
0
25
50
75
100
10
1
0
1
2
3
4
Ambient Temperature T
A
(°C)
Fig. 5 Relative Intensity vs.
Ambient Temperature (°C)
5
Forward Voltage (V)
Ie - Radiant Intensity (mW/sr)
Fig. 6 Relative Radiant Intensity vs.
Angular Displacement
30°
20°
10°
0°
10°
20°
30°
I
F
=20mA
3
Relative Radiant Intensity
1.0
0.9
0.8
0.7
40°
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
1
0.1
25
50
75
100
120
© 2003 Fairchild Semiconductor Corporation
Page 3 of 7
3/5/03
QTLP660CIR
1.8mm DOME LENS
EMITTING DIODE
QTLP660CIR
TYPICAL PERFORMANCE CURVES
Fig. 7 Relative Intensity vs.
Forward Current
1000
Ie–Radiant Intensity (mW/sr)
100
10
1
10
0
10
1
10
2
10
3
10
4
IF – Forward Current (mA)
© 2003 Fairchild Semiconductor Corporation
Page 4 of 7
3/5/03
QTLP660CIR
1.8mm DOME LENS
EMITTING DIODE
QTLP660CIR
RECOMMENDED PRINTED CIRCUIT BOARD PATTERN
0.079 (2.00)
0.098 (2.50)
0.098 (2.50)
0.098 (2.50)
RECOMMENDED IR REFLOW SOLDERING PROFILE
5 sec MAX
soldering time
240° C MAX
+5° C/s MAX
-5° C/s MAX
60 - 120 sec
Preheating
120 - 150° C MAX
© 2003 Fairchild Semiconductor Corporation
Page 5 of 7
3/5/03
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
