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MUR430G

产品描述4 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
产品类别半导体    分立半导体   
文件大小54KB,共2页
制造商Jinan Jing Heng Electronics
官网地址http://www.jinghenggroup.com/
下载文档 详细参数 全文预览

MUR430G概述

4 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

4 A, 600 V, 硅, 整流二极管, DO-201AD

MUR430G规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述铅 FREE, 塑料, CASE 267-03, 2 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状
包装尺寸LONG FORM
端子形式线
端子涂层MATTE 锡
端子位置AXIAL
包装材料塑料/环氧树脂
结构单一的
壳体连接隔离
二极管元件材料
二极管类型整流二极管
应用ULTRA FAST RECOVERY POWER
相数1
反向恢复时间最大0.0750 us
最大重复峰值反向电压600 V
最大平均正向电流4 A
最大非重复峰值正向电流110 A

文档预览

下载PDF文档
R
MUR405G THUR MUR460G
SUPER FAST RECTIFIER
Reverse Voltage: 50 to 600 Volts
Forward Current:4.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low forward voltage drop
High current capability, High reliability
Low power loss, high efficiency
High surge current capability
High speed switching, Low leakage
High temperature soldering guaranteed:260
/10 seconds at terminals
Component in accordance to RoHS 2011/65/EU
DO-201AD
1.0(25.4)
MIN
0.220(5.6)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Epoxy: UL94V-0 rate flame retardant
Lead: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.042ounce, 1
.
19 grams
0.052(1.32)
0.045(1.14)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
ambient temperature unless otMURwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead length
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 4.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
MUR
405G
50
35
50
MUR
410G
100
70
100
MUR
420G
200
140
200
MUR
430G
300
210
300
4.0
MUR
440G
400
280
400
MUR
450G
500
350
500
MUR
460G
600
420
600
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
V
olts
V
olts
V
olts
A
mpS
A
mps
150
1.0
10.0
1.28
V
olts
A
T
A
=100
°
C
50
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
T
rr
C
J
T
J
T
STG
45
80
-55 to+150
-55 to+150
60
ns
P
F
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

 
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