PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
40 W, 1800 – 2000 MHz
Description
The PTMA180402EL and PTMA180402FL are matched, wideband
40-watt, 2-stage, LDMOS integrated amplifiers intended for use in
all typical modulation formats from 1800 to 2000 MHz. These devices
are offered in thermally-enhanced ceramic packages for cool and
reliable operation.
PTMA180402EL
Package H-33265-8
PTMA180402FL
Package H-34265-8
Features
Broadband Performance
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ1
= 330 mA
35
0
•
•
•
-5
-10
-15
Designed for wide RF and modulation bandwidths
and low memory effects
On-chip matching, integrated input DC block,
50-ohm input and > 5-ohm output
Typical single-carrier CDMA performance at
1960 MHz, 28 V
- Average output power = 4 W
- Linear gain = 30 dB
- Efficiency = 14%
- Adjacent channel power = –53 dBc
Typical 2-tone performance, 1960 MHz, 28 V
- Output power (PEP) = 50 W at IM3 = –30 dBc
- Efficiency = 33%
Capable of handling 10:1 VSWR @ 28 V, 40 W
(CW) output power
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
High-performance, thermally-enhanced packages,
Pb-free and RoHS compliant, with solder-friendly
plating
Gain
30
25
20
15
10
5
1700
Return Loss
Return Loss (dB)
Gain (dB)
-20
-25
-30
2200
•
•
•
•
1800
1900
2000
2100
Frequency (MHz)
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
RF Characteristics
CDMA Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 335 mA, P
OUT
= 4 W average, ƒ = 1960 MHz
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
28.5
13
—
Typ
30
14
–53
Max
—
—
–50
Unit
dB
%
dBc
η
D
ACPR
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
Min
65
—
—
—
Typ
—
—
—
0.21
Max
—
1.0
10.0
—
Unit
V
µA
µA
Ω
Final Stage On-state Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ1
= 160 mA,
I
DQ2
= 330 mA
V
GS
I
GSS
2.0
—
2.5
—
3.0
1.0
V
µA
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Overall Thermal Resistance (T
CASE
= 70°C)
P
OUT
= 40 W, I
DQ1
= 160 mA, I
DQ2
= 330 mA
1st Stage
2nd Stage
T
STG
R
θJC
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
175
1.0
–40 to +150
5.0
1.1
Unit
V
V
°C
W
W/°C
°C
°C/W
°C/W
Ordering Information
Type and Version
PTMA180402EL V1
PTMA180402FL V1
Data Sheet
Package Type
H-33265-8
H-34265-8
Package Description
Themally-enhanced, slotted flange
Themally-enhanced, earless flange
2 of 11
Shipping
Tray
Tray
Marking
PTMA180402EL
PTMA180402FL
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
CW Performance
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 330 mA
32
50
40
30
20
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
30
35
40
45
50
10
0
Two-tone at Selected Frequencies
V
DD
= 28 V, I
DQ1
= 130 mA, I
DQ2
= 330 mA
40
-20
-25
-30
-35
31
Power Added Efficiency (%)
Efficiency
Gain
35
30
Gain (dB)
PAE (%)
30
29
28
27
25
20
15
10
5
0
30
35
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
40
45
Efficiency
IMD3
-40
-45
-50
-55
-60
Output Power (dBm)
Output Power, avg. (dBm)
IS-95 at Selected Frequencies
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA
-35
-40
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
25
IS-95 at Selected Temperatures
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA,
ƒ = 1960 MHz
Gain
Gain (dB),
Power Added Efficiency (%)
Power Added Efficiency (%)
35
-45
25
+25ºC
–25ºC
+90ºC
-50
-55
-40
20
15
10
ACPR (dBc)
-45
-50
-55
PAE
15
ACPR
-60
-65
0
2
4
6
8
10
5
0
5
ACPR
-60
-65
-5
0
2
4
6
8
10
Output Power (W)
Output Power, avg. (W)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 08, 2009-08-31
Adj. Ch. Power Ratio (dBc)
Efficiency
IMD3 (dBc)
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Gate – Source Voltage vs. Temperature
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 335 mA
1.15
WCDMA Performance
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA,
Test Mode 1 w/64 DPCH, PAR = 7.5 dB
-30
-35
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
25
20
Normalized Gate – Source
Voltage (threshold), V
ACPR (dBc)
1.05
1.00
0.95
0.90
0.85
-30
-10
10
30
50
70
90
-40
-45
-50
Efficiency
15
10
5
Slope = –1.3 mV/°C
ACPR
-55
1
3
5
7
9
11
0
Temperature (°C)
Output Power (W)
EDGE EVM Performance
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA,
ƒ = 1960 MHz
30
25
3
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ!
= 160 mA, I
DQ2
= 330 mA,
ƒ = 1960 MHz
-35
40
EVM RMS (average %).
Drain Efficiency (%)
Efficiency
2
-45
Efficiency
400 kHz
32
24
16
8
0
ACPR (dB)
.
20
15
10
5
0
30
32
34
36
38
40
42
44
-55
-65
-75
-85
30
32
EVM
1
600 kHz
0
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 08, 2009-08-31
Efficiency (%)
Power Added Efficiency (%)
1.10
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Six-carrier TD-SCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 230 mA, I
DQ2
= 335 mA,
ƒ = 2017.5 MHz
-30
Adj Low er
-35
Adj Upper
Alt Low er
Alt Upper
Effciency
-45
-50
-55
31
32
33
34
35
36
37
38
39
10
5
0
20
15
25
-40
Output Power (dBm)
Broadband Circuit Impedance
Frequency
Z Load
Ω
R
8.89
7.27
6.26
5.59
5.14
4.89
jX
–3.62
–2.99
–2.13
–1.19
–0.27
0.67
D
IN
Z Load
Efficiency (%)
ACPR (dBc)
MHz
1700
1800
1900
2000
2100
2200
S
Z
0
= 50
Ω
-
W
AV
ELE
NGT
H
ST
0.0
0.1
0.2
0.3
0.4
W
ARD
LOAD
-
T HS
T
O
L E
NG
VE
Z Load
0. 1
1700 MHz
Data Sheet
WA
5 of 11
Rev. 08, 2009-08-31
0.5
2200 MHz
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