PBHV2160Z
24 June 2015
SO
T2
23
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
Product data sheet
1. General description
NPN high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT223
(SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z
2. Features and benefits
•
•
•
Low collector-emitter saturation voltage V
CEsat
High collector current capability
High collector current gain h
FE
at high I
C
3. Applications
•
•
•
•
•
•
Electronic ballast for fluorecent lighting
LED driver for LED chain module
LCD backlighting
HID front lighting
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
V
CEO
I
C
Quick reference data
Parameter
collector-emitter
voltage
collector current
Conditions
open base
Min
-
-
Typ
-
-
Max
600
0.1
Unit
V
A
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
B
C
E
C
base
collector
emitter
collector
1
2
3
Simplified outline
4
Graphic symbol
2, 4
1
3
sym016
SC-73 (SOT223)
6. Ordering information
Table 3.
Ordering information
Package
Name
PBHV2160Z
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
7. Marking
Table 4.
Marking codes
Marking code
HV216Z
Type number
PBHV2160Z
PBHV2160Z
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 June 2015
2 / 13
NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
CESM
V
EBO
I
C
P
tot
T
j
T
amb
T
stg
Parameter
collector-base voltage
collector-emitter voltage
collector-emitter peak voltage
emitter-base voltage
collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
[2]
Conditions
open emitter
open base
V
BE
= 0 V
open collector
Min
-
-
-
-
-
Max
600
600
600
6
0.1
0.65
1.4
150
150
150
Unit
V
V
V
V
A
W
W
°C
°C
°C
T
amb
≤ 25 °C
[1]
[2]
-
-
-
-55
-65
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
1.6
P
tot
(W)
1.2
(1)
aaa-013425
2
0.8
(2)
0.4
0
-60
20
2
100
T
amb
(°C)
180
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, standard footprint
Fig. 1.
Power derating curves
PBHV2160Z
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 June 2015
3 / 13
NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.1
0.05
0.02
1
0
0.01
0.5
0.2
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
-
-
-
Max
190
89
20
Unit
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
aaa-013426
2
10
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
2
Z
th(j-a)
(K/W)
10
0.75
0.33
0.2
0.1
0.05
0.02
1
0
0.01
aaa-013427
duty cycle = 1
0.5
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
1
2
10
10
2
t
p
(s)
10
3
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Fig. 3.
PBHV2160Z
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 June 2015
4 / 13
NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Symbol
I
CBO
Characteristics
Parameter
collector-base cut-off
current
Conditions
V
CB
= 400 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= 400 V; I
E
= 0 A; T
j
= 150 °C
Min
-
-
-
-
70
-
-
-
-
Typ
-
-
-
-
125
65
-
1.7
81
Max
100
10
100
100
-
125
950
-
-
mV
mV
pF
pF
Unit
nA
µA
nA
nA
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
collector-emitter cut-off V
CE
= 400 V; V
BE
= 0 V; T
amb
= 25 °C
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
V
EB
= 4.8 V; I
C
= 0 A; T
amb
= 25 °C
V
CE
= 10 V; I
C
= 10 mA; T
amb
= 25 °C
I
C
= 30 mA; I
B
= 6 mA; T
amb
= 25 °C
base-emitter saturation I
C
= 50 mA; I
B
= 5 mA; pulsed;
voltage
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
collector capacitance
emitter capacitance
V
CB
= 20 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
V
EB
= 0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
200
h
FE
150
(1)
aaa-013583
200
h
FE
150
(1)
aaa-014045
(2)
100
100
(2)
(3)
(3)
50
50
0
10
-1
1
10
10
2
I
C
(mA)
10
3
0
10
-1
1
10
10
2
I
C
(mA)
10
3
V
CE
= 10 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4.
DC current gain as a function of collector
current; typical values
Fig. 5.
T
amb
= 25 °C
(1) V
CE
= 50 V
(2) V
CE
= 25 V
(3) V
CE
= 10 V
DC current gain as a function of collector
current; typical values
PBHV2160Z
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 June 2015
5 / 13
物联网大赛方案集锦
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
