TO
-2
20A
BUJ303A
NPN power transistor
Rev. 6 — 8 February 2012
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed planar passivated NPN power switching transistor in a SOT78
(TO-220AB) plastic package.
B
1.2 Features and benefits
Fast switching
Low thermal resistance
Very high voltage capability
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
High frequency electronic lighting
ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
P
tot
V
CESM
Quick reference data
Parameter
collector current
total power dissipation
collector-emitter peak
voltage
DC current gain
Conditions
see
Figure 1;
see
Figure 2;
see
Figure 4
T
mb
≤
25 °C; see
Figure 3
V
BE
= 0 V
Min
-
-
-
Typ
-
-
-
Max
5
100
1000
Unit
A
W
V
Static characteristics
h
FE
I
C
= 5 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 500 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
10
14
22
25
35
35
NXP Semiconductors
BUJ303A
NPN power transistor
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
B
C
E
C
base
collector
emitter
mounting base; connected to
collector
mb
B
E
sym123
Simplified outline
Graphic symbol
C
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUJ303A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 4.
Symbol
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Limiting values
Parameter
collector-emitter peak voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
T
mb
≤
25 °C; see
Figure 3
Conditions
V
BE
= 0 V
I
B
= 0 A
see
Figure 1;
see
Figure 2;
see
Figure 4
Min
-
-
-
-
-
-
-
-65
-
Max
1000
500
5
10
2
4
100
150
150
Unit
V
V
A
A
A
A
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUJ303A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 8 February 2012
2 of 13
NXP Semiconductors
BUJ303A
NPN power transistor
12
I
C
(A)
V
CC
8
L
C
V
CL(CE)
probe point
003aag028
I
Bon
V
BB
L
B
DUT
4
001aab999
0
0
400
800
1200
V
CEclamp
(V)
Fig 1.
Test circuit for reverse bias safe operating area
120
P
der
(%)
80
Fig 2.
Reverse bias safe operating area
001aab993
40
0
0
40
80
120
T
mb
(°C)
160
Fig 3.
Normalized total power dissipation as a function of mounting base temperature
BUJ303A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 8 February 2012
3 of 13
NXP Semiconductors
BUJ303A
NPN power transistor
10
2
I
C
(A)
I
CMmax
I
Cmax
(1)
003aag029
10
duty cycle = 0.01
II
(3)
t
p
= 10 µs
1
(2)
100 µs
1 ms
10 ms
DC
III
(3)
10
-1
I
(3)
10
-2
1
10
10
2
V
CEclamp
(V)
10
3
(1) P
tot
maximum and P
tot
peak maximum lines.
(2) Second breakdown limits.
(3) I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that R
BE
≤
100
Ω
and t
p
≤
0.6
μs.
Fig 4.
Forward bias safe operating area for T
mb
≤
25 °C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
in free air
Min
-
-
Typ
-
60
Max
1.25
-
Unit
K/W
K/W
thermal resistance from junction to mounting base see
Figure 5
10
Z
th(j-mb)
(K/W)
1
003aag030
δ
= 0.5
0.2
0.1
0.05
0.02
0
10
-1
P
tot
δ
=
t
p
T
t
p
t
T
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
1
tp (s)
10
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse width
BUJ303A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 8 February 2012
4 of 13
NXP Semiconductors
BUJ303A
NPN power transistor
6. Characteristics
Table 6.
Symbol
I
CES
Characteristics
Parameter
Conditions
Min
-
Typ
-
Max
1
Unit
mA
Static characteristics
collector-emitter cut-off V
BE
= 0 V; V
CE
= 1000 V; T
mb
= 25 °C;
current
Measured with half-sine wave voltage
(curve tracer)
V
BE
= 0 V; V
CE
= 1000 V; T
j
= 125 °C;
Measured with half-sine wave voltage
(curve tracer)
I
CBO
collector-base cut-off
current
V
CB
= 1000 V; I
E
= 0 A; T
mb
= 25 °C;
Measured with half-sine wave voltage
(curve tracer)
-
-
2
mA
-
-
1
mA
I
CEO
collector-emitter cut-off V
CE
= 500 V; I
B
= 0 A; T
mb
= 25 °C;
current
Measured with half-sine wave voltage
(curve tracer)
emitter-base cut-off
current
collector-emitter
sustaining voltage
collector-emitter
saturation voltage
V
EB
= 9 V; I
C
= 0 A; T
mb
= 25 °C
I
B
= 0 A; I
C
= 100 mA; L
C
= 25 mH;
T
mb
= 25 °C; see
Figure 6;
see
Figure 7
I
C
= 3 A; I
B
= 0.6 A; T
mb
= 25 °C;
see
Figure 8;
see
Figure 9
-
-
0.1
mA
I
EBO
V
CEOsus
V
CEsat
V
BEsat
h
FE
-
500
-
-
10
14
10
-
-
-
0.35
1.01
22
25
13.5
11
0.1
-
1.5
1.3
35
35
17
-
mA
V
V
V
base-emitter saturation I
C
= 3 A; I
B
= 0.6 A; T
mb
= 25 °C;
voltage
see
Figure 10
DC current gain
I
C
= 5 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 500 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
h
FEsat
DC saturation current
gain
I
C
= 2.5 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 3 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
Dynamic Characteristics (switching times - resistive load)
t
s
t
f
turn-off delay time
fall time
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
Ω;
T
mb
= 25 °C; see
Figure 12;
see
Figure 13
I
C
= 2.5 A; I
Bon
= 0.5 A; V
BB
= -5 V;
L
B
= 1 µH; T
mb
= 25 °C; see
Figure 14;
see
Figure 15
I
C
= 2.5 A; I
Bon
= 0.5 A; V
BB
= -5 V;
L
B
= 1 µH; T
j
= 100 °C; see
Figure 14;
see
Figure 15
I
C
= 2.5 A; I
Bon
= 0.5 A; V
BB
= -5 V;
L
B
= 1 µH; T
mb
= 25 °C; see
Figure 14;
see
Figure 15
I
C
= 2.5 A; I
Bon
= 0.5 A; V
BB
= -5 V;
L
B
= 1 µH; T
j
= 100 °C; see
Figure 14;
see
Figure 15
BUJ303A
All information provided in this document is subject to legal disclaimers.
-
-
3.3
0.33
4
0.45
µs
µs
Dynamic Characteristics (switching times - inductive load)
t
s
turn-off delay time
-
1.4
1.6
µs
t
s
turn-off delay time
-
1.7
1.9
µs
t
f
fall time
-
145
160
ns
-
160
200
ns
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 8 February 2012
5 of 13
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