BGA3022
1.2 GHz 18 dB gain CATV amplifier
Rev. 2 — 25 February 2015
Product data sheet
1. Product profile
1.1 General description
The BGA3022 MMIC is a dual wideband amplifier with internal biasing. It is a Medium
Power Amplifier (MPA), specifically designed as an output stage for high linearity CATV
optical mini- and midi-nodes, operating over a frequency range of 40 MHz to 1200 MHz.
The MPA is housed in a lead free 8-pin HSO8 package.
1.2 Features and benefits
Internally biased
Frequency range of 40 MHz to 1200 MHz
High linearity with an IP3
O
of 47 dBm and
an IP2
O
of 85 dBm
Operating from 5 V to 8 V supply
High gain output 1dB compression
point of 30 dBm
75
input and output impedance
I
CC(tot)
can be controlled between
175 mA and 350 mA
Integrated feedback
1.3 Applications
CATV infrastructure network medium power output stage in optical nodes (FTTx),
distribution amplifiers, trunk amplifiers and line extenders
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C; typical values at V
CC
= 8 V; Z
S
= Z
L
= 75
; input and output connected with 1:1 balun, V
I(CTRL)
= 3.3 V or open
(maximum total supply current); 40 MHz
f
1
1200 MHz unless otherwise specified.
Symbol
V
CC
I
CC(tot)
T
amb
P
L(1dB)
IP3
O
IP2
O
[1]
[2]
Parameter
supply voltage
total supply current
ambient temperature
output power at 1 dB gain compression
output third-order intercept point
output second-order intercept point
Conditions
RF input AC coupled
Min
7.6
175
40
-
[1]
[2]
Typ
8.0
350
-
30
47
85
Max
8.4
-
+85
-
-
-
Unit
V
mA
C
dBm
dBm
dBm
-
-
Fundamental frequency f
1
= 500 MHz, fundamental frequency f
2
= 501 MHz. The intermodulation product (IM3) is measured at
2
f
1
f
2
= 499 MHz. The output power of the fundamental frequencies is 10 dBm per frequency.
Fundamental frequency f
1
= 240 MHz, fundamental frequency f
2
= 260 MHz. The intermodulation product (IM2) is measured at
f
1
+ f
2
= 500 MHz. The output power of the fundamental frequencies is 10 dBm per frequency.
NXP Semiconductors
BGA3022
1.2 GHz 18 dB gain CATV amplifier
2. Pinning information
2.1 Pinning
Fig 1.
Pin configuration for SOT786-2
2.2 Pin description
Table 2.
Symbol
AMPA_IN
TMP_SENS
CTRL
AMPB_IN
AMPB_OUT
V
CC
V
CC
AMPA_OUT
GND
[1]
[2]
Pin description
Pin
1
2
3
4
5
6
7
8
exposed die pad
[2]
Description
input amplifier A
temperature sense
total supply current control
input amplifier B
output amplifier B
[1]
supply
[1]
supply
[1]
output amplifier A
[1]
ground
See
Figure 2
for correct connection.
The center metal base of the HSO8 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Package
Name
BGA3022
HSO8
Description
plastic thermal enhanced small outline package;
8 leads; body width 3.9 mm; exposed die pad
Version
SOT786-2
Type number
BGA3022
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
2 of 14
NXP Semiconductors
BGA3022
1.2 GHz 18 dB gain CATV amplifier
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
V
I(CTRL)
V
I(TMP_SENS)
P
i
T
stg
T
j
T
amb
V
ESD
Parameter
supply voltage
input voltage on pin CTRL
input voltage on pin TMP_SENS
input power
storage temperature
junction temperature
ambient temperature
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
Charged Device Model (CDM);
According JEDEC standard 22-C101B
[1]
P
i
= 17 dBm on AMPA_IN (pin 1) and AMPB_IN (pin 4).
Conditions
RF input AC coupled
Min
0.6
0.6
0.6
Max
+12
+8
+8
20
+150
150
+85
-
-
Unit
V
V
V
dBm
C
C
C
kV
V
single tone; on balun
[1]
-
65
-
40
2
500
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
[1][2]
Typ
15
Unit
K/W
Case is ground solder pad.
Thermal resistance measured using infrared measurement technique, device mounted on application board
and placed in still air.
BGA3022
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
3 of 14
NXP Semiconductors
BGA3022
1.2 GHz 18 dB gain CATV amplifier
6. Characteristics
Table 6.
Characteristics at V
CC
= 8 V; I
CC
= 350 mA
T
amb
= 25
C; typical values at V
CC
= 8 V; Z
S
= Z
L
= 75
; input and output connected with
1:1 balun, V
I(CTRL)
= 3.3 V or open (maximum total supply current); 40 MHz
f
1
1200 MHz unless
otherwise specified.
Symbol Parameter
V
CC
I
CC(tot)
s
21
2
SL
sl
FL
P
L(1dB)
IP3
O
IP2
O
CTB
CSO
NF
RL
in
supply voltage
total supply current
insertion power gain
slope straight line
flatness of frequency response
output power at
1 dB gain compression
output third-order
intercept point
output second-order
intercept point
composite triple beat
composite second-order
distortion
noise figure
input return loss
V
O
= 43 dBmV
V
O
= 43 dBmV
f = 500 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
RL
out
output return loss
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
[1]
[2]
Flatness is defined as peak deviation to straight line.
Fundamental frequency f
1
= 500 MHz, fundamental frequency f
2
= 501 MHz. The intermodulation product
(IM3) is measured at 2
f
1
f
2
= 499 MHz. The output power of the fundamental frequencies is 10 dBm
per frequency.
Fundamental frequency f
1
= 240 MHz, fundamental frequency f
2
= 260 MHz. The intermodulation product
(IM2) is measured at f
1
+ f
2
= 500 MHz. The output power of the fundamental frequencies is 10 dBm per
frequency.
Measured with 79 NTSC channels.
[2]
[1]
Conditions
RF input AC coupled
f = 40 MHz
Min Typ Max Unit
7.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
350
18
8.4
-
-
V
mA
dB
dB
dB
dBm
dBm
dBm
dBc
dBc
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
1.9
-
0.25 -
30
47
85
65
75
5.1
18
19
19
19
19
15
18
20
18
17
17
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[3]
[4]
[4]
[3]
[4]
BGA3022
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
4 of 14
NXP Semiconductors
BGA3022
1.2 GHz 18 dB gain CATV amplifier
Table 7.
Characteristics at V
CC
= 8 V; I
CC
= 175 mA
T
amb
= 25
C; typical values at V
CC
= 8 V; Z
S
= Z
L
= 75
; input and output connected with
1:1 balun, V
I(CTRL)
= 0 V (minimum total supply current); 40 MHz
f
1
1200 MHz unless otherwise
specified.
Symbol Parameter
V
CC
I
CC(tot)
s
21
2
SL
sl
FL
P
L(1dB)
IP3
O
IP2
O
CTB
CSO
NF
RL
in
supply voltage
total supply current
insertion power gain
slope straight line
flatness of
frequency response
output power at
1 dB gain compression
output third-order
intercept point
output second-order
intercept point
composite triple beat
composite second-order
distortion
noise figure
input return loss
V
O
= 35 dBmV
V
O
= 35 dBmV
f = 500 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
RL
out
output return loss
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
[1]
[2]
Flatness is defined as peak deviation to straight line.
Fundamental frequency f
1
= 500 MHz, fundamental frequency f
2
= 501 MHz. The intermodulation product
(IM3) is measured at 2
f
1
f
2
= 499 MHz. The output power of the fundamental frequencies is 10 dBm
per frequency.
Fundamental frequency f
1
= 240 MHz, fundamental frequency f
2
= 260 MHz. The intermodulation product
(IM2) is measured at f
1
+ f
2
= 500 MHz. The output power of the fundamental frequencies is 10 dBm per
frequency.
Measured with 79 NTSC channels.
[2]
[1]
Conditions
RF input AC coupled
f = 40 MHz
Min Typ
7.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
175
18
2.2
0.35
24
38
69
66
75
3.8
20
20
19
19
18
14
23
21
18
17
15
12
Max Unit
8.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
mA
dB
dB
dB
dBm
dBm
dBm
dBc
dBc
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
[3]
[4]
[4]
[3]
[4]
BGA3022
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
5 of 14
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