DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92W
PNP 4 GHz wideband transistor
Product specification
May 1994
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
Top view
BFT92W
handbook, 2 columns
3
1
2
MBC870
Marking code:
W1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
F
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
up to T
s
= 93
C;
note 1
I
C
=
15
mA; V
CE
=
10
V
I
C
= 0; V
CB
=
10
V; f = 1 MHz
I
C
=
15
mA; V
CE
=
10
V;
f = 500 MHz
CONDITIONS
open emitter
open base
20
MIN.
50
0.5
4
17
2.5
TYP.
MAX.
20
15
35
300
150
pF
GHz
dB
dB
C
V
V
mA
mW
UNIT
maximum unilateral power gain I
C
=
15
mA; V
CE
=
10
V;
f = 500 MHz; T
amb
= 25
C
noise figure
junction temperature
I
C
=
5
mA; V
CE
=
10
V;
f = 500 MHz
May 1994
2
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
up to T
s
= 93
C;
note 1
CONDITIONS
open emitter
open base
open collector
65
MIN.
BFT92W
MAX.
20
15
2
25
300
+150
150
V
V
V
UNIT
mA
mW
C
C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 93
C;
note 1
VALUE
190
UNIT
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C
(unless otherwise specified).
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain;
note 1
CONDITIONS
I
E
= 0; V
CB
=
10
V
I
C
=
15
mA; V
CE
=
10
V
I
C
=
15
mA; V
CE
=
10
V;
f = 500 MHz; T
amb
= 25
C
I
E
= i
e
= 0; V
CB
=
10
V;
f = 1 MHz
I
C
= i
c
= 0; V
EB
=
0.5
V;
f = 1 MHz
I
C
= 0; V
CB
=
10
V;
f = 1 MHz
I
C
=
15
mA; V
CE
=
10
V;
f = 500 MHz; T
amb
= 25
C
I
C
=
15
mA; V
CE
=
10
V;
f = 1 GHz; T
amb
= 25
C
F
noise figure
s
=
opt
; I
C
=
5
mA;
V
CE
=
10
V; f = 500 MHz
s
=
opt
; I
C
=
5
mA;
V
CE
=
10
V; f = 1 GHz
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
20
MIN.
50
4
0.65
0.75
0.5
17
11
2.5
3
TYP.
GHz
pF
pF
pF
dB
dB
dB
dB
MAX.
50
UNIT
nA
s
21 2
=
10 log -------------------------------------------------------- dB.
1
–
s
11 2
1
–
s
22 2
May 1994
3
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
400
P tot
(mW)
300
MLB540
60
h FE
MLB541
40
200
20
100
0
0
50
100
150
200
T s ( o C)
0
0
10
20
I C (mA)
30
V
CE
=
10
V; T
j
= 25
C.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current, typical values.
MLB542
1
C re
(pF)
0.8
6
fT
(GHz)
4
V CE =
10 V
5V
MLB543
0.6
0.4
2
0.2
0
0
4
8
12
16
20
VCB (V)
0
1
10
I C (mA)
10
2
I
C
= 0; f = 1 MHz.
f = 500 MHz; T
amb
= 25
C.
Fig.4
Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.5
Transition frequency as a function of
collector current, typical values.
May 1994
4
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
30
gain
(dB)
20
MSG
G UM
MLB544
30
gain
(dB)
20
MLB545
MSG
10
10
G UM
0
0
10
20
I C (mA)
30
0
0
10
20
I C (mA)
30
f = 500 MHz; V
CE
=
10
V.
MSG = maximum stable gain.
f = 1 GHz; V
CE
=
10
V.
MSG = maximum stable gain.
Fig.6
Gain as a function of collector current,
typical values.
Fig.7
Gain as a function of collector current,
typical values.
50
gain
(dB)
40
G UM
30
MSG
MLB546
50
gain
(dB)
40
G UM
MSG
30
MLB547
20
20
10
G max
0
10
10
2
10
G max
0
10
3
4
f (MHz)
10
10
10
2
10
3
f (MHz)
10
4
I
C
=
5
mA; V
CE
=
10
V.
MSG = maximum stable gain.
I
C
=
15
mA; V
CE
=
10
V.
MSG = maximum stable gain.
Fig.8
Gain as a function of frequency,
typical values.
Fig.9
Gain as a function of frequency,
typical values.
May 1994
5
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