DISCRETE SEMICONDUCTORS
DATA SHEET
BFT25
NPN 2 GHz wideband transistor
Product specification
November 1992
NXP Semiconductors
Product specification
NPN 2 GHz wideband transistor
DESCRIPTION
NPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100
A
to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PINNING
PIN
1
2
3
base
emitter
collector
1
Top view
BFT25
DESCRIPTION
Code: V1p
lfpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
c
P
tot
f
T
C
re
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
up to T
s
= 167
C;
note 1
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
I
C
= 1 mA; V
CE
= 1 V; f = 1 MHz;
T
amb
= 25
C
open base
CONDITIONS
open emitter
2.3
18
3.8
TYP.
MAX.
8
5
6.5
30
0.45
UNIT
V
V
mA
mW
GHz
pF
dB
dB
maximum unilateral power gain I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
noise figure
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
November 1992
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
f
1 MHz
up to T
s
= 167
C;
note 1
CONDITIONS
open emitter
open base
open collector
65
MIN.
8
5
2
6.5
10
30
150
175
MAX.
V
V
V
mA
mA
mW
C
C
UNIT
NXP Semiconductors
Product specification
NPN 2 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
= is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 10
A;
V
CE
= 1 V
I
C
= 1 mA; V
CE
= 1 V
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz
I
E
= i
e
= 0; V
CB
= 0.5 V; f = 1 MHz
I
c
= i
c
= 0; V
EB
= 0; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V; f = 1 MHz;
T
amb
= 25
C
20
20
1.2
MIN.
30
40
2.3
18
12
5.5
3.8
TYP.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 167C; note 1
BFT25
THERMAL RESISTANCE
260 K/W
MAX.
50
0.6
0.5
0.45
UNIT
nA
GHz
pF
pF
pF
dB
dB
dB
dB
maximum unilateral power gain I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
(note 1)
T
amb
= 25
C
I
C
= 1 mA; V
CE
= 1 V; f = 800 MHz;
T
amb
= 25
C
F
noise figure
I
C
= 0.1 mA; V
CE
= 1 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
C
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
---------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
November 1992
3
NXP Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
MEA908
MEA914
60
handbook, halfpage
h FE
1
Cc
(pF)
0.8
40
0.6
0.4
20
0.2
0
10
–3
10
–2
10
–1
0
1
I C (mA)
10
0
2
4
6
8
10
V CB (V)
V
CE
= 1 V; T
j
= 25
C.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
C.
Fig.2
DC current gain as a function of collector
current.
Fig.3
Collector capacitance as a function of
collector-base voltage.
handbook, halfpage
3
MEA907
MEA909
8
handbook, halfpage
F
(dB)
6
fT
(GHz)
2
4
1
2
0
0
0.5
1
1.5
I C (mA)
2
0
10
–2
10
–1
1
I C (mA)
10
V
CE
= 1 V; f = 500 MHz; T
j
= 25
C.
V
CE
= 1 V; Z
S
= opt.; f = 500 MHz; T
amb
= 25
C.
Fig.4
Transition frequency as a function of
collector current.
Fig.5
Minimum noise figure as a function of
collector current.
November 1992
4
NXP Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
handbook, full pagewidth
1
0.5
2
0.2
5
10
+j
0
–j
500
0.2
800 MHz
5
0.2
0.5
1
2
5
10
∞
10
200
0.5
1
I
C
= 1 mA; V
CE
= 1 V; T
amb
= 25
C.
Z
o
= 50
.
2
MEA916
Fig.6 Common emitter input reflection coefficient (S
11
).
handbook, full pagewidth
90°
120°
60°
150°
200
500
800 MHz
30°
+ϕ
180°
1
2
3
0°
−ϕ
150°
30°
120°
I
C
= 1 mA; V
CE
= 1 V; T
amb
= 25
C.
60°
90°
MEA918
Fig.7 Common emitter forward transmission coefficient (S
21
).
November 1992
5
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