®
THDT6511D
VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
Application Specific Discretes
TRANSIENT
A.S.D.™
FEATURES
s
s
s
s
s
s
DUAL ASYMETRICAL TRANSIENT SUPPRESSOR
PEAK PULSE CURRENT : I
PP
= 40A, 10/100µs
HOLDING CURRENT : 150 mA min.
BREAKDOWN VOLTAGE : 65 V min.
LOW DYNAMIC CHARACTERISTICS
STAND CCITT K20 AND LSSGR
SO-8
DESCRIPTION
This device has been especially designed to
protect subscriber line cards against overvoltage.
Two diodes clamp positive overloads while
negative surges are suppressed by two protection
thyristors.
A particular attention has been given to the internal
wire bonding. The “4-point” configuration ensures
a reliable protection, eliminating overvoltages in-
troduced by the parasitic inductances of the wiring
(Ldi/dt), especially for very fast transient
overvoltages.
SCHEMATIC DIAGRAM
TIP 1
GND 2
COMPLIES WITH THE FOLLOWING STANDARDS :
CCITT K20 :
VDE 0433 :
VDE 0878 :
I3124 :
10/700µs
5/310µs
10/700µs
5/310µs
1.2/50µs
1/20µs
0.5/700µs
0.2/310µs
2/10µs
2/10µs
O
FCC part 68 :
BELLCORE
TR-NWT-001089 :
so
b
te
le
r
P
uc
od
1kV
38A
2kV
50A
1.5kV
40A
1kV
38A
2.5kV
125A (*)
2.5kV
125A (*)
1kV
40A (*)
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
8 TIP
7 GND
6 GND
5 RING
GND 3
RING 4
2/10µs
2/10µs
10/1000µs
10/1000µs
(*) with series resistors or PTC.
August 2001 - Ed: 2
1/6
THDT6511D
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
I
PP
Peak pulse current
Parameter
(see note 1)
10/1000µs
5/310µs
2/10µs
t = 300 ms
t=1s
t=5s
Value
40
50
125
10
3.5
1
1
- 55 to + 150
150
260
% I
PP
Unit
A
I
TSM
Non repetitive surge peak on-state current
F = 50 Hz
F = 50 Hz, 60 x 1 s, 2 mn between pulse
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s
A
I
TSM
T
stg
T
j
T
L
A
°C
°C
Note 1 :
Pulse waveform :
10/1000µs tr=10µs
5/310µs
tr=5µs
2/10µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
100
50
0
THERMAL RESISTANCES
Symbol
R
th (j-a)
Junction to ambient
Parameter
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
V
RM
I
RM
V
BR
V
BO
I
H
V
F
Parameter
Stand-off voltage
Leakage current at stand-off voltage
O
so
b
V
FP
I
BO
I
PP
C
αT
te
le
Breakdown voltage
Breakover voltage
Holding current
V
BO
V
BR
V
RM
I
RM
V
F
V
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
t
r
t
p
od
r
s)
t(
uc
t
Value
170
Unit
°C/W
I
I
F
Forward voltage drop
Peak forward voltage
I
H
Breakover current
Peak pulse current
Capacitance
Temperature coefficient
I
BO
I
pp
2/6
THDT6511D
1 - PARAMETERS RELATED TO DIODE LINE / GND
Symbol
V
F
V
FP
I
F
= 1 A
see curve fig. 1
Test conditions
tp = 100
µs
NA
NA
Min.
Typ.
Max.
2
NA
Unit
V
V
NA : Non Available
2 - PARAMETERS RELATED TO PROTECTION THYRISTOR
Symbol
V
BR
V
BO
I
RM
I
BO
I
BO
I
H
αT
C
dV/dt
V
D
= 100 mV
RMS
F = 1KHz
V
RM
= 63 V
tp = 100
µs
F = 50 Hz
RG = 600
Ω
150
110
I
R
= 1mA
Tests conditions
Min.
65
68
85
100
Typ.
Max.
Unit
V
V
µA
Linear ramp up to 67 % of V
BR
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
450
mA
500
mA
mA
10
-4
/°C
500
pF
kV /
µs
15
5
3/6
THDT6511D
DYNAMIC CHARACTERISTICS : V
FP
and V
BO
Figure 1 :
60
10
5
2
250 ns
10 us
10 ms
t
-85
-100
-130
1 us
200 ns
Under lightning and power crossing test, the device limits the transient voltage to the values
indicated in the figure
LSSGR TEST DIAGRAM
Figure 2 :
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
THDT6511D
To stand the LSSGR test requirements, Rp must be
15
Ω
4/6
THDT6511D
TYPICAL APPLICATION
RING
GENERATOR
-V
bat
LINE A
T
E
S
T
R
E
L
A
Y
LINE B
PTC
TIP
RING
RELAY
PTC
THBT200S
Line A
D1
O
so
b
te
le
r
P
uc
od
P1
s)
t(
Tip
bs
-O
et
l
o
THDT6511D
P
e
od
r
s)
t(
uc
Integrated
SLIC
RING
- For positive surges versus GND (TIP), diode D
1
will conduct.
- For negative surges versus GND (TIP),
protection device P
1
will trigger at maximum
voltage equal to V
BO
.
Line B
Ring
5/6
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