MBR1040FCT SERIES
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
0.112(2.85)
0.100(2.55)
0.134(3.4)
0.118(3.0)
0.272(6.9)
0.248(6.3)
40 to 200 Volts
CURRENT
10 Amperes
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Lead free in comply with EU RoHS 2002/95/EC directives
0.406(10.3)
0.381(9.7)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi mum Rec urrent P ea k Reverse Vo ltag e
Ma xi mum RMS Vo ltage
Ma xi mum D C B loc ki ng Volta ge
Ma xi mum A ve rage F o rward C urrent
(S e e fi g.1)
Pe ak F o rward S urg e C urrent : 8.3 ms s i ng le
half si ne-wave superi mp ose d on rated lo ad
(J E D E C method)
Ma xi mum F o rwa rd Volta ge at 5A , p er le g
Ma xi mum D C Revers e C urrent T
J
=2 5
O
C
at Ra ted D C B loc ki ng Volta ge T
J
=1 25
O
C
Typ i ca l Therma l Res i sta nc e
Op era ti ng and S to rage J uncti on
Temp erature Ra ng e
S YMB OL
V
RRM
V
RMS
V
DC
I
F( AV )
MB R1 040F C T MB R1045 FC T MB R10 50F C T MB R10 60F C T MB R1 080F C T MB R1 090F C T MB R10 100F C T MB R10 150F C T MB R1 0200 FC T
UNITS
V
V
V
A
40
28
40
45
3 1.5
45
50
35
50
60
42
60
80
56
80
10
90
63
90
10 0
70
10 0
15 0
10 5
15 0
20 0
1 40
20 0
I
F SM
1 50
A
V
F
0.7
0.75
0.05
20
2
0.8
0.9
V
I
R
mA
R
Θ
JC
T
J
,T
S TG
-5 5 to + 1 5 0
O
C /W
O
-65 to + 1 75
C
Notes :
Both Bonding and Chip structure are available.
April 21,2011-REV.05
PAGE . 1
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