PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 2A , 600V, R
DS(ON)
=4.6Ω@V
GS
=10V, I
D
=1A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
1
2
G
3
D
S
1
2
G
3
S
D
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP2N60
PJF2N60
MARKING
P2N60
F2N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
Gate
50PCS/TUBE
50PCS/TUBE
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
P J P 2 N6 0
600
+3 0
2
8
45
0 .3 6
P J F 2 N6 0
Uni ts
V
V
2
8
20
0 .1 6
A
A
W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0
120
2 .7 8
6 2 .5
6 .2 5
100
O
C
Avalanche Energy with Single Pulse
I
AS
=2.0A, VDD=50V, L=56mH
mJ
C /W
C /W
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
O
Note :
1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
PAGE . 1
PJP2N60 / PJF2N60
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V
D SS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
= 1A
V
DS
=600V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
600
2 .0
-
-
-
-
-
4.0
-
-
-
4 .0
4.6
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Q
g
Q
gs
Q
gd
-
9 .3
2 .0
3.3
10.8
10.4
2 3 .6
1 6 .2
320
30
3
13
-
-
18
16
ns
32
22
380
45
5.6
pF
nC
V
D S
=4 8 0 V, I
D
=2 A
V
GS
=1 0 V
-
-
-
t
d (o n)
t
r
t
d (o ff)
t
f
C
C
C
i ss
V
DD
=300V , I
D
=2A
V
GS
=10V, R
G
=25Ω
-
-
-
-
o ss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=2 A , V
GS
=0 V
V
GS
=0 V, I
F
=2 A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
230
1 .0
2 .0
8 .0
1 .4
-
-
A
A
V
ns
uC
Ma x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
NOTE :
Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
STAD-NOV.24.2009
PAGE . 2
PJP2N60 / PJF2N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
4
I
D
- Drain-to-Source Current (A)
10
I
D
- Drain Source Current (A)
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
V
GS
= 20V~ 6.0V
V
DS
=40V
5.0V
T
J
= 125
o
C
1
25
o
C
-55
o
C
0.1
2
3
4
5
6
7
8
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
7.0
R
DS(ON)
- On Resistance(Ω)
Ω
R
DS(ON)
- On Resistance(Ω)
Ω
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2
4
6
8
T
J
=25
o
C
I
D
=1A
VGS=10V
V
GS
= 20V
0
1
2
3
4
5
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75
100 125 150
C - Capacitance (pF)
V
GS
=10 V
I
D
=1.0A
500
400
Ciss
300
200
100
0
0
Crss
5
10
15
20
25
30
f = 1MHz
V
GS
= 0V
Coss
T
J
- Junction Temperature (
o
C)
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
STAD-NOV.24.2009
Fig.6 Capacitance
PAGE. 3
PJP2N60 / PJF2N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
V
GS
- Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
100
V
DS
=480V
V
DS
=300V
V
DS
=120V
I
S
- Source Current (A)
I
D
=2A
V
GS
= 0V
10
T
J
= 125
o
C
1
25
o
C
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
- Gate Charge (nC)
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
1.2
Fig.8 Source-Drain Diode Forward Voltage
BV
DSS
- Breakdown Voltage(NORMALIZED)
I
D
= 250µA
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-NOV.24.2009
PAGE. 4
PJP2N60 / PJF2N60
LEGAL STATEMENT
Copyright PanJit International, Inc
2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-NOV.24.2009
PAGE . 5
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