Preliminary
Datasheet
RJH60F7ADPK
Silicon N Channel IGBT
High Speed Power Switching
Features
R07DS0237EJ0300
(Previous: REJ03G1837-0200)
Rev.3.00
Jan 05, 2011
Low collector to emitter saturation voltage
V
CE(sat)
= 1.35 V typ. (at I
C
= 50 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 74 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
j-c
Tj
Tstg
Ratings
600
±30
90
50
180
100
328.9
0.38
2.0
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0237EJ0300 Rev.3.00
Jan 05, 2011
Page 1 of 7
RJH60F7ADPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
t
rr
Min
4
Typ
1.35
1.6
4700
198
83
63
81
142
74
1.6
140
Max
100
±1
8
1.75
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 50 A, V
GE
= 15V
Note3
I
C
= 90 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note3
Inductive load
I
F
= 20 A
Note3
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
I
F
= 20 A
di
F
/dt = 100 A/s
R07DS0237EJ0300 Rev.3.00
Jan 05, 2011
Page 2 of 7
RJH60F7ADPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
160
Typical Output Characteristics
Pulse Test
Ta = 25
°
C
10 V
120
15 V
8.8 V
80
8.6 V
8.4 V
40
8.2 V
V
GE
= 8 V
9.4 V
9.6 V
9.8 V
9.2 V
9V
Collector Current I
C
(A)
100
PW
=
10
μ
s
10
1
Tc = 25°C
Single pulse
0.1
1
Collector Current I
C
(A)
10
0
μ
s
0
10
100
1000
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
160
Collector Current I
C
(A)
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
7
6
5
4
3
2
1
0
6
8
10
12
14
16
18
20
I
C
= 20 A
50 A
90 A
Pulse Test
Ta = 25
°
C
120
80
Tc = 75°C
40
25°C
–25°C
0
0
2
4
6
8
10
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
8
7
I
C
= 10 mA
6
5
1 mA
4
3
2
−25
V
CE
= 10 V
Pulse Test
0
25
50
75
100 125
150
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−25
V
GE
= 15 V
Pulse Test
0
25
50
75
100 125 150
50 A
20 A
I
C
= 90 A
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0237EJ0300 Rev.3.00
Jan 05, 2011
Page 3 of 7
RJH60F7ADPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
V
GE
= 0 V
Pulse Test
Ta = 25
°
C
Cies
Forward Current vs. Forward Voltage (Typical)
100
Forward Current I
F
(A)
Capacitance C (pF)
80
1000
60
40
100
Coes
V
GE
= 0 V
f = 1 MHz Ta = 25
°
C
0
50
100
150
200
Cres
20
0
0
1
2
3
4
5
10
250
300
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
V
GE
12
V
CC
= 600 V
300 V
400
8
600
200
V
CC
= 600 V
300 V
0
0
40
80
120
160
4
0
200
Gate Charge Qg (nc)
R07DS0237EJ0300 Rev.3.00
Jan 05, 2011
Gate to Emitter Voltage V
GE
(V)
800
I
C
= 50 A
Ta = 25
°
C
V
CE
16
Page 4 of 7
RJH60F7ADPK
Switching Characteristics (Typical) (1)
1000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
Preliminary
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
10000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
Eon includes the diode recovery
1000
Eoff
100
Eon
10
1
10
100 200
10
1
10
100 200
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
200
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
160
td(off)
Swithing Energy Losses E (μJ)
Switching Times t (ns)
1200
Eoff
800
Eon
400
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon includes the diode recovery
0
0
25
50
75
100
125
150
120
tr
tf
td(on)
40
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tr includes the diode recovery
0
25
50
75
100
125
150
80
0
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0237EJ0300 Rev.3.00
Jan 05, 2011
Page 5 of 7
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