SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
・Excellent
Switching Times
: t
on
=1.1μ
S(Max.), t
f
=0.7μ
S(Max.), at I
C
=1A
・High
Collector Voltage : V
CBO
=700V.
H
J
K
MJE13003
TRIPLE DIFFUSED NPN TRANSISTOR
A
B
C
E
F
G
D
L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25℃
Tc=25℃
T
j
T
stg
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
RATING
700
400
9
1.5
A
3
0.75
1.5
W
20
150
-55½150
℃
℃
A
UNIT
V
V
V
1. EMITTER
2. COLLECTOR
3. BASE
N
M
O
1
2
3
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
Φ3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
SYMBOL
I
EBO
I
CBO
h
FE
(1) (Note)
h
FE
(2)
TEST CONDITION
V
EB
=9V, I
C
=0
V
CB
=700V, I
E
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1A
I
C
=0.5A, I
B
=0.1A
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
V
CE(sat)
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
V
BE(sat)
C
ob
f
T
t
on
t
stg
t
f
I
B1
MIN.
-
-
9
5
-
-
-
-
-
-
4
OUTPUT
TYP.
-
-
-
-
-
-
-
-
-
21
-
-
-
-
MAX.
10
10
38
-
0.5
1
3
1
UNIT
μ
A
μ
A
V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
V
CB
=10V, f=0.1MHz, I
E
=0
V
CE
=10V, I
C
=0.1A
300µS
INPUT
I
B2
DUTY CYCLE < 2%
=
I
B1
=I
B2
=0.2A
I
B1
125Ω
I
B2
V
CC
=125V
V
1.2
-
-
1.1
4.0
0.7
pF
MHz
μ
S
μ
S
μ
S
-
-
-
Note : h
FE
Classification R:9½15, O:13½21, Y:20~38
2009. 8. 19
Revision No : 10
1/2
MJE13003
DC CURRENT GAIN
100
DC CURRENT GAIN h
FE
50
30
T
j
=150 C
T
j
=25 C
T
j
=-55 C
COMMON EMITTER
V
CE
=2V
V
BE(sat)
- I
C
1.4
BASE-EMITTER VOLTAGE
V
BE(sat)
(V)
1.2
1
T
j
=-55 C
V
BE(sat)
@I
C
/I
B
=3
V
BE(on)
@V
CE
=2V
10
5
3
0.8
0.6
0.4
0.01
T
j
=25 C
T
j
=25 C
T
j
=150 C
1
0.01
0.03
0.1
0.3
1
2
0.03
0.1
0.3
1
2
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.01
0.03
0.1
T
j
=150 C
T
j
=25 C
T
j
=-55 C
COMMON
EMITTER
I
C
/I
B
=3
SWITCHING CHARACTERISTIC
10
5
SWITCHING TIME (µs)
3
t
stg
V
CC
=125V
I
C
/I
B
=5
1
0.5
0.3
t
f
0.3
1
2
0.1
0.01
0.03
0.1
0.3
1
2
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
P
C
- Ta
25
COLLECTOR CURRENT I
C
(A)
POWER DISSIPATION P
C
(W)
20
15
10
5
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta ( C)
10
3
1
0.3
0.1
0.03
0.01
SAFE OPERATING AREA
I
C
MAX.(PULSED) *
(DC)
µ
S
10
1
1
5m
mS
00
µ
S
S
*
*
*
*
* SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
1
3
10
30
100
300
1k
COLLECTOR EMITTER VOLTAGE V
CE
(V)
2009. 8. 19
Revision No : 10
2/2
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