SSE90N06-30P
Elektronische Bauelemente
N-Channel Enhancement Mode Mos.FET
87 A, 60 V, R
DS(ON)
26.5 m
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
trench process to provide low R
DS(on)
and to ensure minimal power loss
and heat dissipation. Typical applications are DC-DC converters and
power management in portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and cordless telephones.
D
C
TO-220P
B
R
E
G
A
T
S
TYPICAL APPLICATIONS
Low R
DS(on)
Provides Higher Efficiency and
Extends Battery Life.
Low Thermal impedance copper leadframe
TO-220P saves board space.
Fast Switch speed.
High performance trench technology.
F
H
I
J
K
L
X
M
U
P
N
PRODUCT SUMMARY
SSE90N06-30P
V
DS
(V)
60
R
DS
(on) (m
26.5@V
GS
= 10V
32.5@V
GS
= 4.5V
N-Channel
D
2
O
V
I
D
(A)
87
1
Q
1 2 3
Q
W
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
H
J
K
L
M
Millimeter
Min.
Max.
7.90
8.10
9.45
9.65
9.87
10.47
-
11.50
1.06
1.46
2.60
3.00
6.30
6.70
8.35
8.75
1.60 Typ.
1.10
1.30
1.17
1.37
-
1.50
REF.
N
O
P
Q
R
S
T
U
V
W
X
Millimeter
Min.
Max.
0.75
0.95
0.66
0.86
13.50
14.50
2.44
3.44
3.50
3.70
1.15
1.45
4.30
4.70
-
2.7
1.89
3.09
0.40
0.60
2.60
3.60
G
1
S
3
ABSOLUTE MAXIMUM RATINGS(T
A
=25
°C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
j
, T
stg
Ratings
Maximum
Unit
V
V
A
A
A
W
°C
T
C
= 25
°C
T
C
= 25
°C
60
±20
87
240
90
300
-55 ~ 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
1
Maximum Junction to Case
Notes
1
2
Package Limited.
Pulse width limited by maximum junction temperature.
Any changes of specification will not be informed individually.
Symbol
R
JA
R
JC
Maximum
62.5
0.5
Unit
°C
/ W
http://www.SeCoSGmbH.com/
29-Nov-2010 Rev. A
Page 1 of 2
SSE90N06-30P
Elektronische Bauelemente
N-Channel Enhancement Mode Mos.FET
87 A, 60 V, R
DS(ON)
26.5 m
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
Forward Transconductance
1
Diode Forward Voltage
1
Symbol Min.
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
1
-
-
-
120
-
-
-
-
Typ. Max.
-
-
-
-
-
-
-
30
1.1
-
±100
1
Unit
V
nA
uA
Test Conditions
V
DS
=V
GS
, I
D
= 250uA
V
DS
= 0V, V
GS
= 20V
V
DS
= 48V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 55°C
25
-
26.5
mΩ
32.5
-
-
S
V
A
V
DS
= 5V, V
GS
= 10V
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 20A
V
DS
= 15V, I
D
= 30A
I
S
= 34A, V
GS
= 0V
DYNAMIC
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Notes
1
2
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
8.5
3.3
4.0
18
59
37
9
-
-
-
-
-
nS
-
-
V
DD
= 25V, V
GEN
= 10V,
R
L
= 25, I
D
= 34A
nC
V
DS
= 15V, V
GS
= 4.5V,
I
D
= 90A
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Nov-2010 Rev. A
Page 2 of 2
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