SSD9435
Elektronische Bauelemente
-20A, -30V,R
DS(ON)
50m
Ω
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
TO-252
The SSD9435
utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device.
The TO-252 is universally
used for commercial-industrial
applications.
Features
*
Low Gate Charge
*
Simple Drive Requirement
*
Fast Switching
D
REF.
A
B
C
D
E
F
S
G
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
=100
C
I
DM
P
D
@T
C
= 25
o
C
o
o
Ratings
-30
± 20
-20
-13
-72
31
0.25
Unit
V
V
A
A
A
W
W/ C
o
o
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Symbol
Max.
Max.
Rthj-c
Rthj-a
Ratings
4.0
110
o
o
Unit
C /W
C /W
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of 4
SSD9435
Elektronische Bauelemente
-20A, -30V,R
DS(ON)
50m
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current(Tj=150
C
)
Static Drain-Source On-Resistance
2
o
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
-
30
_
Typ.
_
-
0.1
_
_
_
_
_
_
Max.
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=-250uA
Reference to 25 C, I
D
=-
1mA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
20V
V
DS
=-30V,V
GS
=0
V
DS
=-24V,V
GS
=0
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-5 A
o
_
-1.0
_
_
_
_
-3.0
±
100
-1
-25
50
90
16
_
_
R
D S (O N )
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
_
m
Ω
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
10
3
5
9.6
18
19
14
463
187
140
9.6
nC
I
D
=-10A
V
DS
=-24V
V
GS
=-4.5V
_
_
_
_
V
DD
=-15V
I
D
=-10A
nS
V
GS
=-10 V
R
G
=3.3
Ω
R
D
=1.5
Ω
740
_
_
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
_
_
S
V
DS
=-10V, I
D
=-6 A
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Change
Symbol
V
SD
T
rr
Min.
_
_
Typ.
_
Max.
-1.2
_
_
Unit
V
nS
nC
Test Condition
I
S
=-10A, V
GS
=0V.
I
S
=-10A, V
GS
=0V.
dl/dt=100A/us
34
30
Q
rr
_
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SSD9435
Elektronische Bauelemente
-20A, -30V,R
DS(ON)
50m
Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
ttp://www.SeCoSGmbH.com/
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of 4
SSD9435
Elektronische Bauelemente
-20A, -30V,R
DS(ON)
50m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
ttp://www.SeCoSGmbH.com/
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of 4
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