SSD70N03-04D
Elektronische Bauelemente
75A, 30V, R
DS(ON)
6 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high
cell density process. Low R
DS(on)
assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
TO-252(D-Pack)
A
B
C
D
FEATURES
GE
Low R
DS(on)
provides higher efficiency and extends
battery life.
Miniature TO-252 surface mount package saves
board space.
High power and current handling capability.
Low side high current DC-DC converter applications.
K
M
J
HF
N
O
P
REF.
PACKAGE INFORMATION
Package
TO-252
MPQ
2.5K
LeaderSize
13’ inch
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Total Power Dissipation
1
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
1
Maximum Thermal Resistance Junction-Case
Notes：
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
DM
I
S
P
D
@T
C
=25℃
T
J
, T
STG
Ratings
30
±20
75
40
30
50
-55 ~ 175
Unit
V
V
A
A
A
W
°C
Thermal Resistance Ratings
R
θJA
R
θJC
50
3.0
°C / W
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. A
Page 1 of 4
SSD70N03-04D
Elektronische Bauelemente
75A, 30V, R
DS(ON)
6 mΩ
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
Forward Transconductance
1
Diode Forward Voltage
1
Typ.
Max.
Unit
Test conditions
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
1.0
-
-
-
34
-
-
-
-
-
-
-
-
-
-
-
22
1.1
-
±100
1
25
-
6
8
-
-
V
nA
μA
A
mΩ
S
V
V
DS
=V
GS
, I
D
=250μA
V
DS
=0V, V
GS
=20V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, T
J
=55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=75A
V
GS
=4.5V, I
D
=65 A
V
DS
=15V, I
D
=75 A
I
S
=34A, V
GS
=0V
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
25.5
6.6
9.0
16
5
23
3
-
-
-
-
-
-
-
nS
V
DD
=25V
I
D
=34A
V
GEN
=10 V
R
L
=25
nC
V
DS
=15V
V
GS
=4.5V
I
D
=75 A
Notes：
1 Pulse test：Pulse width
≦
300
μs,
duty cycle
≦
2％.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. A
Page 2 of 4
SSD70N03-04D
Elektronische Bauelemente
75A, 30V, R
DS(ON)
6 mΩ
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. A
Page 3 of 4
SSD70N03-04D
Elektronische Bauelemente
75A, 30V, R
DS(ON)
6 mΩ
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. A
Page 4 of 4
求职招聘
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
