SSD20P06-135D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
16A, -60V, R
DS(ON)
135mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low R
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
TO-252(D-Pack)
FEATURES
Low R
DS(on)
provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology..
A
B
C
D
PRODUCT SUMMARY
V
DS
(V)
-60
PRODUCT SUMMARY
R
DS
(on) m(
135@V
GS
= -10V
190@V
GS
= -4.5V
K
GE
HF
I
D
(A)
16
14
Gate
Drain
M
J
N
O
P
REF.
Source
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Total Power Dissipation
a
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
a
Maximum Thermal Resistance Junction-Case
Notes：
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
R
θJA
R
θJC
THERMAL RESISTANCE RATINGS
-60
±20
16
±40
-15
50
-55 ~ 175
50
3.0
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Aug-2010 Rev.B
Page 1 of 4
SSD20P06-135D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
16A, -60V, R
DS(ON)
135mΩ
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
Forward Transconductance
a
Diode Forward Voltage
a
SYMBO MIN. TYP. MAX. UNIT
Static
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
-1
-
-
-
-20
-
-
-
-
-
-
-
-
-
-
-
8
-
-
±100
-1
-10
-
135
190
-
-1.2
nA
μA
A
mΩ
S
V
TEST CONDITIONS
V
DS
= V
GS,
I
D
= -250
μA
V
DS
= 0V, V
GS
= ±20V
V
DS
= -48V, V
GS
= 0V
V
DS
= -48V, V
GS
=0V, T
J
=55°C
V
DS
= -5V, V
GS
= -10V
V
GS
= -10V, I
D
= -28A
V
GS
= -4.5V, I
D
= -14A
V
DS
= -15V, I
D
= -28A
I
S
= -2.5 A, V
GS
= 0 V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
18
5
2
570
80
40
8
10
35
12
-
-
-
-
-
-
-
-
-
-
nS
pF
nC
V
DS
= -30 V
V
GS
= -4.5 V
I
D
= -28 A
V
DS
= -15 V
V
GS
= 0 V
f = 1MHz
V
DD
= -30 V
I
D
= -1 A
V
GEN
= -10 V
R
L
= 30
R
G
= 6
Notes
a. Pulse test：Pulse width
≦
300
μs,
duty cycle
≦
2％.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Aug-2010 Rev.B
Page 2 of 4
SSD20P06-135D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
16A, -60V, R
DS(ON)
135mΩ
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Aug-2010 Rev.B
Page 3 of 4
SSD20P06-135D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
16A, -60V, R
DS(ON)
135mΩ
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Aug-2010 Rev.B
Page 4 of 4
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