SS8050T
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN Silicon
General Purpose Transistor
FEATURES
Power dissipation
P
CM
: 1 W
Collector Current
I
CM
: 1.5 A
Collector-base voltage
TO-92
1
2
3
V
(BR)CBO
: 40 V
Operating & storage junction temperature
T
j
, T
stg
: - 55 C ~ + 150 C
2
O
O
1 2 3
1
1. EMITTER
2. BASS
3
.
COLLECTOR
3
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
DC current gain
H
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
V
CE
=1V, I
C
= 800mA
I
C
=800 mA, I
B
= 80m A
I
C
=800 mA, I
B
= 80m A
V
CE
=10V,
Transition frequency
I
C
= 50mA
100
MHz
40
0.5
1.2
V
V
Test
conditions
I
E
=0
MIN
40
25
5
0.1
0.1
0.1
85
400
TYP
MAX
UNIT
V
V
V
O
Ic= 100
μ
A，
Ic= 0.1mA， I
B
=0
I
E
=100
μ
A， I
C
=0
V
CB
=40 V , I
E
=0
V
CE
=20V , I
B
=0
V
EB
= 5V ,
I
C
=0
μ
A
μ
A
μ
A
V
CE
=1V, I
C
= 100m A
f
T
f=
30MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
E
300-400
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SS8050T
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
Typical Characteristics
0.5
1000
V
CE
= 1V
I
C
[mA], COLLECTOR CURRENT
I
B
= 3.0mA
0.4
I
B
= 2.5mA
0.3
h
FE
, DC CURRENT GAIN
2.0
100
I
B
= 2.0mA
I
B
= 1.5mA
0.2
10
I
B
= 1.0mA
0.1
I
B
= 0.5mA
1
0.1
0
0.4
0.8
1.2
1.6
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
V
CE
= 1V
V
BE
(sat)
1000
I
C
[mA], COLLECTOR CURRENT
10
100
1000
10
100
1
V
CE
(sat)
10
0.1
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
1000
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
E
= 0
f = 1MHz
V
CE
= 10V
C
ob
[pF], CAPACITANCE
100
100
10
10
1
1
10
100
1
1
10
100
400
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
