SUF11MH~SUF18MH
Elektronische Bauelemente
50 ~ 600 V
1.0 Amp Surface Mount Super Fast Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
DESCRIPTIONS
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to optimize board space.
Small plastic SMD package.
High surge and high current capability.
Superfast recovery time for switching mode application.
Glass-passivated chip junction.
SOD-123MH
A
B
F
D
C
PACKAGING INFORMATION
Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0110 g (approximately)
MARKING CODE
Part Number
SUF11MH
SUF12MH
SUF14MH
Marking Code
S1
S2
S4
Part Number
SUF16MH
SUF18MH
Marking Code
S6
S8
REF.
A
B
C
Millimeter
Min.
Max.
3.30
3.70
1.40
1.80
0.60
1.00
E
E
REF.
D
E
F
Millimeter
Min.
Max.
3.10 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
ELECTRICAL CHARACTERISTICS AND RATINGS
(T
A
= 25°C unless otherwise specified.)
PARAMETERS
Recurrent Peak
Reverse Voltage (Max.)
RMS Voltage (Max.)
Reverse Voltage (Max.)
Forward Voltage (Max.)
Average Forward
Rectified Current (Max.)
SYMBOL
PART NUMBERS
SUF11
MH
SUF12
MH
SUF14
MH
SUF16
MH
SUF18
MH
UNITS
TESTING
CONDITIONS
V
RRM
V
RMS
V
R
V
F
I
O
50
35
50
100
70
100
0.95
200
140
200
400
280
400
1.25
600
420
600
1.70
V
V
V
V
A
I
F
= 1A
Ambient
temperature = 50°C
8.3ms single half
sine-wave
superimposed on
rated load (JEDEC
method)
1.0
Peak Forward Surge Current
DC Reverse Current at
Rated DC Blocking Voltage (Max.)
Reverse Recovery Time
Junction – Ambient
Thermal Resistance (Typ.)
Junction Capacitance (Typ.)
Storage and Operating
Temperature Range
I
FSM
25
5.0
100
35
42
10
-65 ~ 175, -55 to 150
A
I
R
t
RR
R
θJA
C
J
T
STG
, T
J
μA
nS
°C/W
pF
°C
V
R
=V
RRM
, T
A
=25°C
V
R
=V
RRM
, T
A
=100°C
f=1MHz and
applied 4V DC
reverse voltage
01-December-2008 Rev. A
Page 1 of 2
SUF11MH~SUF18MH
Elektronische Bauelemente
50 ~ 600 V
1.0 Amp Surface Mount Super Fast Rectifiers
RATINGS AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
10
F1
INSTANTANEOUS FORWARD CURRENT,(A)
11
-M
H~
SU
4-M
H
SU
F
SU
1.0
F1
6-
M
H
.1
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
SU
F1
8-
M
H
AMBIENT TEMPERATURE ( C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
25
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
20
FORWARD VOLT
AGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
15
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
10
5
(+)
25Vdc
(approx.)
( )
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
+0.5A
|
|
|
|
|
|
|
|
JUNCTION CAPACITANCE,(pF)
60
50
40
30
20
10
0
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
01-December-2008 Rev. A
Page 2 of 2
传感器
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