SST2604
Elektronische Bauelemente
5.5A, 30V,R
DS(ON)
45m
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-26
Description
The SST2604 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2604 is universally used for all commercial-industrial applications.
1.90
REF
0.95
REF
0.95
REF
1.2
REF
0.45
REF
2.60
3.00
1.40
1.80
0.30
0.55
2.70
3.10
0.60
REF
0.10
Max
Features
* Lower Gate Charge
* Fast Switching Characteristic
* Small Footprint & Low Profile Package
D
0
o
10
o
0.7
1.45
Dimensions in millimeters
D
6
D
5
S
4
Date Code
G
1
2604
S
2
3
D
D
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
GS
@4.5V
Continuous Drain Current,V
GS
@4.5V
Pulsed Drain Current
1 ,2
3
3
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
=70
C
I
DM
P
D
@T
C
=25
C
o
o
o
Ratings
30
± 20
5.5
4.4
20
2
0.016
Unit
V
V
A
A
A
W
W/ C
o
o
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
3
Symbol
Max.
Rthj-c
Ratings
62.5
Unit
o
C /W
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Any changing of specification will not be informed individual
15-Jun-2010 Rev. C
Page 1 of 4
SST2604
Elektronische Bauelemente
5.5A, 30V,R
DS(ON)
45m
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current(Tj=55
C
)
Static Drain-Source On-Resistance
2
o
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
30
_
Typ.
_
Max.
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1m
A
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±
20V
V
DS
=30V,V
GS
=0
V
DS
=24V,V
GS
=0
V
GS
=10V, I
D
=4.8A
V
GS
=4.5V, I
D
=2.4A
I
D
=4.8A
V
DS
=24V
V
GS
= 4.5V
o
0.02
_
_
_
_
_
_
_
1.0
_
_
_
_
3.0
±
100
1
25
45
65
10
_
_
R
D S (O N )
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
_
m
Ω
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
6
2
3
6
8
15
4
440
105
35
7
nC
_
_
_
_
V
DD
=15V
I
D
=1A
nS
V
GS
=10V
R
G
=3.3
Ω
R
D
=15
Ω
705
_
_
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
_
_
S
V
DS
=10V, I
D
=4.8A
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Symbol
V
SD
T
rr
Min.
_
_
Typ.
_
Max.
1.2
_
_
Unit
V
nS
nC
Test Condition
I
S
=4.8A, V
GS
=0V.
I
S
=4.8A , V
GS
=0V.
dl/dt=100A/us
15
7
Reverse Recovery Change
Q
rr
_
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width
≦
300us, dutycycle
≦
2%.
O
3.Surface mounted on 1 in
2
copper pad of FR4 board; 156 C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
15-Jun-2010
Rev. C
Page
2
of
4
SST2604
5.5A, 30V,R
DS(ON)
45m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
http://www.SeCoSGmbH.com/
Reverse Diode
15-Jun-2010 Rev. C
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page3 of
4
SST2604
5.5A, 30V,R
DS(ON)
45m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
15-Jun-2010 Rev. C
Page
4
of
4
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