SSRF90N06
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
87A, 60V, R
DS(ON)
26.5mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low R
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
ITO-220
B
N
D
E
FEATURES
M
A
Low R
DS(on)
provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe ITO-220 saves board
space.
Fast switching speed.
High performance trench technology.
H
J
K
L
C
G
F
L
PRODUCT SUMMARY
V
DS
(V)
60
PRODUCT SUMMARY
R
DS
(on) m(
26.5@V
GS
= 10V
32.5@V
GS
= 4.5V
I
D
(A)
87
a
Gate
Dimensions in millimeters
Drain
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
15.00
15.60
9.50
10.50
13.00 Min
4.30
4.70
2.50
3.10
2.40
2.80
0.30
0.70
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
3.00
3.80
0.90
1.50
0.50
0.90
2.34
2.74
2.50
2.90
3.1
3.4
Source
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Total Power Dissipation
a
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
a
Maximum Thermal Resistance Junction-Case
Notes：
a. Package Limited.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
V
DS
V
GS
I
D
@T
C
=25℃
I
DM
I
S
P
D
@T
C
=25℃
T
J
, T
STG
R
θJA
R
θJC
60
±20
87
240
90
300
-55 ~ 175
62.5
3.2
THERMAL RESISTANCE RATINGS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Dec-2010 Rev.B
Page 1 of 4
SSRF90N06
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
87A, 60V, R
DS(ON)
26.5mΩ
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
Forward Transconductance
a
Diode Forward Voltage
a
SYMBO MIN. TYP. MAX. UNIT
Static
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
1
-
-
-
120
-
-
-
-
-
-
-
-
-
-
-
30
1.1
3
±100
1
25
-
26.5
32.5
-
-
V
nA
μA
A
mΩ
S
V
TEST CONDITIONS
V
DS
= V
GS,
I
D
= 250
μA
V
DS
= 0V, V
GS
= 20V
V
DS
= 48V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
=55°C
V
DS
= 5V, V
GS
= 10V
V
GS
= 10V, I
D
= 30 A
V
GS
= 4.5V, I
D
= 20 A
V
DS
= 15V, I
D
= 30 A
I
S
= 34 A, V
GS
= 0 V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
8.5
3.3
4.0
18
59
37
9
-
-
-
-
-
-
-
nS
V
DD
= 25 V
I
D
= 34 A
V
GEN
= 10 V
R
L
= 25
nC
V
DS
= 15 V
V
GS
= 4.5 V
I
D
= 90 A
Notes
a. Pulse test：Pulse width
≦
300
μs,
duty cycle
≦
2％.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Dec-2010 Rev.B
Page 2 of 4
SSRF90N06
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
87A, 60V, R
DS(ON)
26.5mΩ
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Dec-2010 Rev.B
Page 3 of 4
SSRF90N06
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
87A, 60V, R
DS(ON)
26.5mΩ
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Dec-2010 Rev.B
Page 4 of 4
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