SSP7431P
Elektronische Bauelemente
-17A, -30V, R
DS(ON)
13 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
D
SOP-8PP
B
FEATURES
C
θ
e
E
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SOP-8PP
saves board space.
Fast switching speed.
High performance trench technology.
A
d
b
g
APPLICATION
F
DC-DC converters and power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
G
REF.
A
B
C
D
E
F
G
PACKAGE INFORMATION
Package
SOP-8PP
MPQ
3K
Leader Size
7’ inch
Millimeter
Min.
Max.
1.00
1.10
5.70
5.80
0.20
0.30
3.61
3.98
5.40
6.10
0.08
0.20
3.60
3.99
REF.
θ
b
d
e
g
Millimeter
Min.
Max.
0
°
12
°
0.33
0.51
1.27BSC
1.35
1.75
1.10
-
S
S
S
G
D
D
D
D
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
-30
±20
-17
-14
-50
-2.1
5.0
3.2
-55~150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
1
t≦10 sec
Steady-State
R
θJA
25
65
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-May-2011 Rev. B
Page 1 of 4
SSP7431P
Elektronische Bauelemente
-17A, -30V, R
DS(ON)
13 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
Min.
Static
-30
-1
-
-
-
-50
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
29
-0.8
Max.
-
-
±100
-1
-5
-
13
19
-
-
Unit
V
V
nA
μA
A
mΩ
S
V
Teat Conditions
V
GS
=0, I
D
= -250μA
V
DS
=V
GS
, I
D
= -250μA
V
DS
=0, V
GS
= ±25V
V
DS
= -24V, V
GS
=0
V
DS
= -24V, V
GS
=0, T
J
=55°C
V
DS
= -5V, V
GS
= -10V
V
GS
= -10V, I
D
= -11.5A
V
GS
= -4.5V, I
D
= -9.3A
V
DS
= -15V,
,
I
D
= -11.5A
I
S
=2.5A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
25
11
17
15
13
100
54
-
-
-
-
-
-
-
nS
I
D
= -1A, V
DD
= -15V
V
GEN
= -10V
R
L
=6Ω
nC
I
D
= -11.5A
V
DS
= -15V
V
GS
= -5V
Notes:
1. Pulse test：PW
≦
300
μs
duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-May-2011 Rev. B
Page 2 of 4
SSP7431P
Elektronische Bauelemente
-17A, -30V, R
DS(ON)
13 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-May-2011 Rev. B
Page 3 of 4
SSP7431P
Elektronische Bauelemente
-17A, -30V, R
DS(ON)
13 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-May-2011 Rev. B
Page 4 of 4
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