SSP7150N
Elektronische Bauelemente
3.6A, 150V, R
DS(ON)
255 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOP-8PP
B
Low R
DS(on)
trench technology.
Low thermal impedance.
Fast switching speed.
D
APPLICATIONS
C
θ
e
E
White LED boost converters.
Automotive Systems.
Industrial DC/DC Conversion Circuits.
d
A
b
g
PACKAGE INFORMATION
Package
SOP-8PP
MPQ
3K
Leader Size
7’ inch
G
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
1.00
1.10
5.70
5.80
0.20
0.30
3.61
3.98
5.40
6.10
0.08
0.20
3.60
3.99
REF.
θ
b
d
e
g
Millimeter
Min.
Max.
0
°
12
°
0.33
0.51
1.27BSC
1.35
1.75
1.10
-
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
150
±20
3.6
2.9
20
6.2
5
3.2
-55~150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
t≦10 sec
Steady State
R
θJA
25
65
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Apr-2011 Rev. A
Page 1 of 4
SSP7150N
Elektronische Bauelemente
3.6A, 150V, R
DS(ON)
255 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
Min
Static
1
-
-
-
10
-
-
-
-
Typ
-
-
-
-
-
-
-
10
0.76
Max
-
±10
1
10
-
255
290
-
-
Unit
V
nA
μA
A
mΩ
S
V
Test condition
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
=
±20V
V
DS
=120V, V
GS
=0
V
DS
=120V, V
GS
=0,T
J
=55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=2.9A
V
GS
=4.5V, I
D
=2.7A
V
DS
=15V,
,
I
D
=2.9A
I
S
=3.1A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
10.8
3.3
5.6
10.1
10
50
22
848
69
29
-
-
-
-
-
-
-
-
-
-
pF
V
DS
=15V, V
GS
=0, f=1MHz
nS
I
D
=2.9A, V
DD
=75V
V
GEN
=10V
R
L
=25.9Ω, R
GEN
=6Ω
nC
I
D
=2.9A
V
DS
=75V
V
GS
=4.5V
Notes:
1. Pulse test：PW≦300μs duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Apr-2011 Rev. A
Page 2 of 4
SSP7150N
Elektronische Bauelemente
3.6A, 150V, R
DS(ON)
255 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Apr-2011 Rev. A
Page 3 of 4
SSP7150N
Elektronische Bauelemente
3.6A, 150V, R
DS(ON)
255 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Apr-2011 Rev. A
Page 4 of 4
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