SSG5509A
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
DS(ON)
30 mΩ
Ω
P-Ch: -4.8 A, -30 V, R
DS(ON)
55 mΩ
Ω
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG5509A uses advanced trench technology to
provide excellent on-resistance extremely efficient and
cost-effectiveness device. The SOP-8 package is universally
preferred for all commercial-industrial surface mount
applications and suited for low voltage applications such as
DC/DC converters.
SOP-8
B
L
D
M
FEATURES
Lower Gate Charge
RoHS Compliant
H
G
A
C
N
J
K
F
E
MARKING CODE
REF.
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
5509ASS
=
Date
Code
PACKAGE INFORMATION
Package
SOP-8
MPQ
3K
Leader Size
13 inch
A
B
C
D
E
F
G
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
3
Symbol
V
DS
V
GS
T
A
=25℃
℃
T
A
=70℃
℃
I
D
I
DM
P
D
T
J
, T
STG
Ratings
N-Ch
P-Ch
Unit
V
V
A
A
A
W
°C
W /
°C
30
±12
6.1
4.9
30
2
-55~150
0.016
-30
±12
-4.8
-3.8
-30
Total Power Dissipation
Operating Junction and Storage Temperature Range
Linear Derating Factor
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-ambient
3
R
θJA
62.5
°C
/ W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A
Page 1 of 7
SSG5509A
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
DS(ON)
30 mΩ
Ω
P-Ch: -4.8 A, -30 V, R
DS(ON)
55 mΩ
Ω
N-CHANNEL ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(T
J
=25℃)
℃
I
DSS
Drain-Source Leakage Current(T
J
=70℃)
℃
-
-
Static Drain-Source On-Resistance
R
DS(ON)
-
-
-
-
25
30
35
55
Total Gate Charge
2
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
Min.
30
0.5
-
-
-
Typ.
-
-
15
-
-
Max.
-
1.2
-
±100
1
Unit
V
V
S
nA
µA
µA
Test Conditions
V
GS
=0, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=5V, I
D
=5A
V
GS
= ±12V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0
V
GS
=10V, I
D
=5.8A
m
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
I
D
=5.8A
V
DS
=15V
V
GS
=4.5V
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
9.7
1.6
3.1
3.3
4.8
26.3
4.1
823
99
77
-
-
-
-
nS
-
-
-
-
-
pF
nC
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
V
DS
=15V
V
GS
=10V
R
G
=3
R
L
=2.7
V
GS
=0
V
DS
=15V
f=1.0 MHz
Source -Drain Diode
Forward On Voltage
2
2
V
SD
T
rr
Q
rr
I
S
-
-
-
-
-
16
8.9
-
1.0
-
-
2.5
V
nS
nC
A
I
S
=1A, V
GS
=0
I
S
=5A, V
GS
=0,
dl/dt =100A/µs
V
D
=V
G
=0, V
S
=1.0V
Reverse Recovery Time
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 135
°C/W
when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A
Page 2 of 7
SSG5509A
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
DS(ON)
30 mΩ
Ω
P-Ch: -4.8 A, -30 V, R
DS(ON)
55 mΩ
Ω
P-CHANNEL ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(T
J
=25℃)
℃
I
DSS
Drain-Source Leakage Current(T
J
=70℃)
℃
-
-
Static Drain-Source On-Resistance
R
DS(ON)
-
-
Total Gate Charge
2
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
Min.
-30
-0.5
-
-
-
Typ.
-
-
11
-
-
-
-
-
-
9.4
2
3
6.3
3.2
38.2
12
954
115
77
Max.
-
-1.2
-
±100
-1
-25
55
70
120
-
-
-
-
-
Unit
V
V
S
nA
µA
µA
Test Conditions
V
GS
=0, I
D
= -250µA
V
DS
=V
GS
, I
D
= -250µA
V
DS
= -5V, I
D
= -5A
V
GS
= ±12V
V
DS
= -24V, V
GS
=0
V
DS
= -24V, V
GS
=0
V
GS
= -10V, I
D
= -4.2A
m
V
GS
= -4.5V, I
D
= -4A
V
GS
= -2.5V, I
D
= -1A
I
D
= -4 A
V
DS
= -15V
V
GS
= -4.5V
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
nC
nS
-
-
-
-
-
pF
V
DS
= -15V
V
GS
= -10V
R
G
=6
R
L
=3.6
V
GS
=0
V
DS
= -15V
f=1.0 MHz
Source -Drain Diode
Forward On Voltage
2
2
V
SD
T
rr
Q
rr
I
S
-
-
-
-
-
20.2
11.2
-
-1.0
-
-
-2.2
V
nS
nC
A
I
S
= -1A, V
GS
=0
I
S
= -4A, V
GS
=0,
dl/dt=100A/µs
V
D
=V
G
=0, V
S
= -1V
Reverse Recovery Time
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 135
°C/W
when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A
Page 3 of 7
SSG5509A
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
DS(ON)
30 mΩ
Ω
P-Ch: -4.8 A, -30 V, R
DS(ON)
55 mΩ
Ω
CHARACTERISTIC CURVE (N-Ch)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A
Page 4 of 7
SSG5509A
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.1 A, 30 V, R
DS(ON)
30 mΩ
Ω
P-Ch: -4.8 A, -30 V, R
DS(ON)
55 mΩ
Ω
CHARACTERISTIC CURVE (N-Ch)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2011 Rev. A
Page 5 of 7
Microchip MCU
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