SSG4490N
Elektronische Bauelemente
5.2 A, 100 V, R
DS(ON)
78 m
N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
SOP-8
B
L
D
M
A
C
N
J
K
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOIC-8 saves board space.
Fast switching speed.
High performance trench technology.
H
G
F
E
REF.
A
B
C
D
E
F
G
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
LeaderSize
13’ inch
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
S
S
S
G
D
D
D
D
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Total Power Dissipation
1
Operating Junction & Storage Temperature Range
Thermal Resistance Junction-Case (Max.)
Notes
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
1
1
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
I
S
P
D
@ T
A
= 25°C
P
D
@ T
A
= 70°C
T
J
, T
STG
R
θJC
R
θJA
Thermal Resistance Ratings
t
≦
5 sec
t
≦
5 sec
Ratings
100
±20
5.2
3.9
50
2.3
3.1
2.2
-55 ~ 150
25
50
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
Thermal Resistance Junction-ambient (Max.)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Dec-2010 Rev. B
Page 1 of 2
SSG4490N
Elektronische Bauelemente
5.2 A, 100 V, R
DS(ON)
78 m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
1
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
Min.
1
-
-
-
20
-
-
-
-
-
-
-
Typ.
Static
-
-
-
-
-
-
-
40
0.7
Max.
-
±100
1
25
-
78
92
-
-
Unit
V
nA
μA
μA
A
mΩ
S
V
Teat Conditions
V
DS
= V
GS
, I
D
=-250μA
V
DS
= 0V, V
GS
=20V
V
DS
=80V, V
GS
=0V
V
DS
=80V, V
GS
=0V, T
J
=55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=5.2A
V
GS
=4.5V, I
D
=4.8A
V
DS
=15V, I
D
=5.2A
I
S
=2.3A, V
GS
=0V
I
D
=5.2A
V
DS
=15V
V
GS
=4.5V
Dynamic
2.6
4.6
2
12.5
-
-
-
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes
1.
2.
Pulse test：PW
≦
300
μs
duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
-
-
-
-
20
9
70
20
-
-
-
-
nS
V
DD
=25V
I
D
=1A
V
GEN
=10V
R
L
=25Ω
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Dec-2010 Rev. B
Page 2 of 2
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