SSG4463P
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R
DS(ON)
11.5 m
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low R
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry.
SOP-8
B
L
D
M
FEATURES
A
C
N
J
K
Low R
DS(on)
provides higher efficiency and extends
battery life.
Miniature SOP-8 surface mount package saves
board space.
High power and current handling capability.
H
G
F
E
REF.
A
B
C
D
E
F
G
APPLICATION
PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
S
D
D
D
D
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
Leader Size
13’ inch
S
S
G
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Total Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Ratings
-20
±12
-13.4
-8.4
±50
-2.1
3.1
2.0
-55 ~ 150
Unit
V
V
A
A
A
A
W
W
°C
Operating Junction & Storage Temperature Range
Thermal Resistance Junction-Case (Max.)
1
Thermal Resistance Junction-Ambient (Max.)
1
Thermal Resistance Rating
t
≦
5 sec
t
≦
5 sec
R
θJC
R
θJA
25
40
°C / W
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-May-2011 Rev. C
Page 1 of 4
SSG4463P
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R
DS(ON)
11.5 m
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
Min.
-0.7
-
-
-
-50
-
Typ.
Static
-
-
-
-
-
-
-
-
70
-0.6
Max.
-
±100
-1
-5
-
11.5
19
35
-
-
Unit
V
nA
μA
A
Teat Conditions
V
DS
=V
GS
, I
D
= -250μA
V
DS
=0, V
GS
= ±12V
V
DS
= -16V, V
GS
=0
V
DS
= -16V, V
GS
=0, T
J
=55°C
V
DS
= -4.5V, V
GS
= -10V
V
GS
= -4.5V, I
D
= -11.5A
R
DS(ON)
-
-
mΩ
V
GS
= -2.5V, I
D
= -10.4A
V
GS
= -1.8V, I
D
= -7.7A
g
fs
V
SD
-
-
S
V
V
DS
= -15V, I
D
= -11.5A
I
S
= -2.5A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
33.4
5.9
8.1
20
23
289
134
-
-
-
-
-
-
-
nS
nC
I
D
= -11.5A
V
DS
= -10V
V
GS
= -4.5V
V
DD
= -10V
I
D
= -1A
V
GEN
= -4.5V
R
L
= 6Ω
Notes:
1. Pulse test：PW
≦
300μs duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-May-2011 Rev. C
Page 2 of 4
SSG4463P
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R
DS(ON)
11.5 m
CHARACTERISTIC CURVES
W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-May-2011 Rev. C
Page 3 of 4
SSG4463P
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-13.4A, -20V, R
DS(ON)
11.5 m
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-May-2011 Rev. C
Page 4 of 4
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