SSG4392N
Elektronische Bauelemente
2.9A, 150V, R
DS(ON)
255 m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R
DS(on)
and to ensure minimal power loss and
heat dissipation.
SOP-8
B
L
D
M
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
A
C
N
J
K
H
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
F
E
REF.
A
B
C
D
E
F
G
REF.
H
J
K
L
M
N
APPLICATION
DC-DC converters and power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
S
D
D
D
D
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
Leader Size
13’ inch
S
S
G
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Total Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Ratings
150
Unit
V
V
A
A
A
A
W
W
°C
±
20
2.9
2.4
20
4
3.1
2.2
-55~150
Operating Junction & Storage Temperature Range
1
THERMAL RESISTANCE RATINGS
Maximum Junction to Case
t
≦
5 sec
t
≦
5 sec
R
θJC
R
θJA
40
80
°C / W
°C / W
Maximum Junction to Ambient
1
Notes:
1
Surface Mounted on 1” x 1” FR4 Board.
2
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-May-2011 Rev. B
Page 1 of 4
SSG4392N
Elektronische Bauelemente
2.9A, 150V, R
DS(ON)
255 m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
Min.
1
-
-
-
1.5
-
-
-
-
Typ.
Static
-
-
-
-
-
-
-
10
0.7
Max.
-
Unit
V
nA
μA
A
mΩ
S
V
Test conditions
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
= ±20V
V
DS
=120V, V
GS
=0
V
DS
=120V, V
GS
=0, T
J
= 55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=2.3A
V
GS
=4.5V, I
D
=2.2A
V
DS
=15V, I
D
=2.3A
I
S
=2A, V
GS
=0
±
10
1
25
-
255
290
-
-
Dynamic
2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
920
101
77
12
3.3
6.5
10
11
59
23
-
-
-
-
-
-
-
ns
nC
pF
V
DS
=15V
V
GS
=0
f=1MHz
I
D
=2.3A
V
DS
=75V
V
GS
=4.5V
V
DD
=75V
I
D
=2.3A
V
GEN
=10V
R
L
= 32.3Ω
R
GEN
=6Ω
Notes:
1
Pulse test：PW
≦
300μs duty cycle
≦
2%.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-May-2011 Rev. B
Page 2 of 4
SSG4392N
Elektronische Bauelemente
2.9A, 150V, R
DS(ON)
255 m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-May-2011 Rev. B
Page 3 of 4
SSG4392N
Elektronische Bauelemente
2.9A, 150V, R
DS(ON)
255 m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-May-2011 Rev. B
Page 4 of 4
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