SSG4228
Elektronische Bauelemente
6.8A, 30V, R
DS(ON)
26m
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4228 provide the designer with the best
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
SOP-8
B
FEATURES
L
D
M
Low on-resistance
Simple Drive Requirement
Double-N MosFET Package
H
G
A
C
N
J
K
F
E
MARKING CODE
REF.
4228SS
½
= Date Code
PACKAGE INFORMATION
Package
SOP-8
MPQ
3K
LeaderSize
13’ inch
A
B
C
D
E
F
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
S
G
S
G
D
D
D
D
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Pulsed Drain Current
1
Power Dissipation
1
Maximum Junction to Ambient
3
Linear Derating Factor
Operating Junction & Storage Temperature Range
T
J
, T
STG
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
Ratings
30
±20
6.8
5.5
40
2
62.5
0.016
-55~150
Unit
V
V
A
A
W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 1 of 4
SSG4228
Elektronische Bauelemente
6.8A, 30V, R
DS(ON)
26m
Dual-N Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
j
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp.
Coefficient
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Symbol
BV
DSS
△
BV
DS
/
△
T
j
V
GS(th)
I
GSS
I
DSS
Min.
30
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Static
-
0.03
-
-
-
-
-
-
9
2
6
10
9
18
6
580
150
108
15
Max.
-
-
3
±100
1
25
26
40
15
-
-
-
-
-
-
930
-
-
-
Unit
V
V / °C
V
nA
μA
μA
mΩ
Test condition
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=1mA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V
V
DS
=30V,V
GS
=0
V
DS
=24V,V
GS
=0
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
I
D
= 6.8A
V
DS
= 24V
V
GS
= 4.5V
V
DS
= 15V
I
D
= 1A
V
GS
= 10V
R
G
= 3.3Ω
R
D
= 15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
V
DS
=10V, I
D
=6A
Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
2
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Conductance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
G
fs
nC
nS
pF
S
Source-Drain Diode
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
V
DS
T
rr
Q
rr
-
-
-
-
15
9
1.3
-
-
V
nS
nC
I
S
=1.7A, V
GS
=0V, T
j
=25°C
I
S
=6.8A, V
GS
=0V
dl/dt=100A/μs
Notes:
1 Pulse width limited by Max. junction temperature.
2 Pulse width 300us, duty cycle 2%.
3 Surface mounted on 1 inch2 copper pad of FR4 board; 135°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 2 of 4
SSG4228
Elektronische Bauelemente
6.8A, 30V, R
DS(ON)
26m
Dual-N Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 3 of 4
SSG4228
Elektronische Bauelemente
6.8A, 30V, R
DS(ON)
26m
Dual-N Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 4 of 4
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