PD - 9.1384B
PRELIMINARY
Logic-Level Gate Drive
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Advanced Process Technology
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Ultra Low On-Resistance
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Isolated Package
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High Voltage Isolation = 2.5KVRMS
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Sink to Lead Creepage Dist. = 4.8mm
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Fully Avalanche Rated
Description
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IRLI2910
HEXFET
®
Power MOSFET
D
V
DSS
= 100V
R
DS(on)
= 0.026Ω
G
I
D
= 31A
S
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
31
22
190
63
0.42
±16
520
29
6.3
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.4
65
Units
°C/W
°C/W
3/16/98
IRLI2910
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
Min. Typ. Max. Units
Conditions
100
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
––– 0.026
V
GS
= 10V, I
D
= 16A
–––
––– 0.030
Ω
V
GS
= 5.0V, I
D
= 16A
–––
––– 0.040
V
GS
= 4.0V, I
D
= 14A
1.0
––– 2.0
V
V
DS
= V
GS
, I
D
= 250µA
28
––– –––
S
V
DS
= 50V, I
D
= 29A
–––
––– 25
V
DS
= 100V, V
GS
= 0V
µA
–––
––– 250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
–––
––– 100
V
GS
= 16V
nA
–––
––– -100
V
GS
= -16V
–––
––– 140
I
D
= 29A
–––
––– 20
nC V
DS
= 80V
–––
––– 81
V
GS
= 5.0V, See Fig. 6 and 13
–––
11 –––
V
DD
= 50V
–––
100 –––
I
D
= 29A
ns
–––
49 –––
R
G
= 1.4Ω, V
GS
= 5.0V
–––
55 –––
R
D
= 1.7Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
G
from package
––– 7.5 –––
and center of die contact
––– 3700 –––
V
GS
= 0V
–––
630 –––
V
DS
= 25V
pF
–––
330 –––
ƒ = 1.0MHz, See Fig. 5
–––
12 –––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
240
1.8
31
A
190
1.3
350
2.7
V
ns
µC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 29A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 1.2mH
R
G
= 25Ω, I
AS
= 29A. (See Figure 12)
I
SD
≤
29A, di/dt
≤
490A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
t=60s, ƒ=60Hz
Uses IRL2910 data and test conditions
IRLI2910
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
1000
I
D
, D rain-to-S ource C urrent (A )
100
I
D
, D rain-to-S ource C urrent (A )
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
10
10
2.5V
2.5V
1
0.1
1
20µ s P U LS E W ID TH
T
J
= 25°C
10
A
1
0.1
1
20µ s P U LS E W ID TH
T
J
= 175°C
10
100
A
100
V
D S
, D rain-to-S ource V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
D S (on )
, D rain-to -S ource O n R esistance
(N orm alized)
I
D
= 48A
I
D
, D ra in -to-S o urc e C urren t (A )
2.5
100
T
J
= 2 5 °C
T
J
= 1 7 5 °C
2.0
1.5
10
1.0
0.5
1
2.0
2.5
3.0
3.5
4.0
V
DS
= 50V
2 0 µ s P U L S E W ID T H
4.5
5.0
5.5
6.0
A
0.0
-60 -40 -20
0
20
40
60
80
V
G S
= 10V
100 120 140 160 180
A
V
G S
, G a te -to -S o u rc e V o lta g e (V )
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRLI2910
6000
15
5000
V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
iss
C
rss
C
is s C
oss
=
=
=
=
0V ,
f = 1M H z
C
gs
+ C
gd
, C
ds
S H O R TE D
C
gd
C
ds
+ C
gd
I
D
= 29A
V
D S
= 80V
V
D S
= 50V
V
D S
= 20V
12
C , C apacitanc e (pF )
4000
9
3000
C
oss
2000
6
C
rs s
1000
3
0
1
10
100
A
0
0
40
80
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
120
160
A
200
V
D S
, D rain-to-S ource V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R everse D rain C urrent (A )
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R
D S (on)
I
D
, D rain C urrent (A )
100
10µ s
100
100µ s
T
J
= 175°C
T
J
= 25°C
10
1m s
10m s
10
0.4
0.8
1.2
1.6
V
G S
= 0V
A
1
1
T
C
= 25°C
T
J
= 175°C
S ingle P ulse
10
100
2.0
A
1000
V
S D
, S ource-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating
Area
IRLI2910
35
V
DS
30
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
25
-
V
DD
20
5.0V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
15
10
Fig 10a.
Switching Time Test Circuit
V
DS
90%
5
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
P
DM
t
1
t
2
0.01
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
stm32/stm8
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