Bulletin I27102 rev. A 10/97
IRK. SERIES
SCR / SCR and SCR / DIODE
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
MAGN-A-pakä Power Modules
170A
230A
250A
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are elec-
trically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can
be interconnected to form single phase or three phase
bridges or as AC-switches when modules are connected in
anti-parallel mode.
These modules are intended for general purpose applica-
tions such as battery chargers, welders and plating equip-
ment and where high voltage and high current are required
(motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
I
T(AV)
@ 85°C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I
2
√t
V
DRM
/ V
RRM
T
J
range
IRK.170..
170
377
5100
5350
131
119
1310
IRK.230..
230
510
7500
7850
280
256
2800
IRK.250..
Units
250
555
8500
8900
361
330
3610
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
Up to1600 Up to 2000 Up to1600
-40 to 130
C
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1
IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
V
RRM
V
DRM
, maximum
repetitive peak reverse and
off-state blocking voltage
V
400
800
1200
1400
1600
800
1200
1600
1800
2000
V
RSM
, maximum non-repetitive
peak reverse voltage
V
500
900
1300
1500
1700
900
1300
1700
1900
2100
I
RRM
I
DRM
max
@ 130°C
mA
50
IRK.170-
IRK.250-
04
08
12
14
16
08
12
16
18
20
IRK.230-
50
On-state Conduction
Parameters
I
T(AV)
Maximum average on-state current
@ Case temperature
I
T(RMS)
Maximum RMS on -state current
I
TSM
Maximum peak, one-cycle on-state,
non-repetitive surge current
IRK.170 IRK.230 IRK.250
Units Conditions
170
85
377
5100
5350
4300
4500
It
2
2
230
85
510
7500
7850
6300
6600
280
256
198
181
2800
1.03
1.07
0.77
0.73
1.59
500
1000
250
85
555
8500
8900
7150
7500
361
330
255
233
3610
0.97
1.00
0.60
0.57
1.44
500
1000
A
o
180
o
conduction, half sine wave
as AC switch
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms
100% V
RRM
Sinusoidal half wave,
No voltage initial T
J
= T
J
max
t = 8.3ms reapplied
C
A
A
Maximum I t for fusing
131
119
92.5
84.4
KA s t = 10ms
2
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
KA
√s
t = 0.1 to 10ms, no voltage reapplied
2
I
√t
2
Maximum I
√t
for fusing
2
1310
0.89
1.34
0.96
1.60
500
1000
V
T(TO)1
Low level value of threshold voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level on-state slope resistance
High level on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)2
High level value of threshold voltage 1.12
mΩ (16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
I
TM
=
π
x I
T(AV)
, T
J
= T
J
max., 180
o
conduction
Av. power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
mA Anode supply=12V, initial I
T
=30A, T
J
=25
o
C
Anode supply=12V, resistive load=1Ω
gate pulse: 10V, 100µs, T
J
= 25°C
Switching
Parameters
t
d
t
r
t
q
Typical delay time
Typical rise time
Typical turn-off time
IRK.170 IRK.230 IRK.250
Units Conditions
1.0
2.0
50 - 150
µs
µs
T
J
= 25
o
C, Gate Current=1A dI
g/dt
=1A/µs
Vd = 0,67% V
DRM
I
TM
= 300 A ; -dI/dt=15 A/µs; T
J
= T
J
max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
2
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
Blocking
Parameters
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
V
INS
RMS isolation voltage
dv/
dt
Critical rate of rise of off-state voltage
3500
1000
V
50Hz, circuit to base, all termin. shorted, 25°C,1s
V/µs T
J
= T
J
max, exponential to 67% rated V
DRM
IRK.170 IRK.230 IRK.250
Units Conditions
50
mA
T
J
=T
J
max.
Triggering
Parameters
I
P
GM
IRK.170 IRK.230 IRK.250
Units Conditions
10.0
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
W
W
A
V
V
V
V
mA
mA
mA
V
tp
≤
5ms,
f = 50Hz,
tp
≤
5ms,
tp
≤
5ms,
T
J
= - 40
o
C
T
J
= 25
o
C
T
J
= T
J
max.
T
J
= - 40
o
C
T
J
= 25 C
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
o
Maximum peak gate power
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
Anode supply = 12V, resistive
load ; Ra = 1Ω
Anode supply = 12V, resistive
load ; Ra = 1Ω
P
G(AV)
Maximum average gate power
+I
GM
-V
GT
V
GT
Maximum peak gate current
Max. peak negative gate voltage
Maximum required DC gate
voltage to trigger
I
GT
Maximum required DC gate
current to trigger
V
GD
I
GD
di/
dt
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Max rate of rise of
turned-on current
0.25
10.0
500
mA @ T
J
= T
J
max., rated V
DRM
applied
A/µs @ T
J
= T
J
max., I
TM
= 400 A rated V
DRM
applied
Thermal and Mechanical Specifications
Parameters
T
J
Junction operating temperature
T
stg
Storage temperature range
R
thJC
Maximum thermal resistance
junction to case
R
thC-S
Thermal resistance, case to heatsink
T
Mounting tourque ±10%
MAP to heatsink
Busbar to MAP
wt
Approximate weight
Case style
4 to 6
4 to 6
500
17.8
MAGN-A-pak
0.17
0.02
IRK.170 IRK.230 IRK.250
Units Conditions
-40 to 130
-40 to 150
0.125
0.02
0.125
0.02
o
o
C
C
K/W Per junction, DC operation
K/W
Mounting surface flat, smooth and greased
(per module)
A mounting compound is recommended and the
Nm tourque should be rechecked after a period of
Nm about 3 hours to allow for the spread of the
compound
g
oz
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3
IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRK.170-
IRK.230-
IRK.250-
Sinusoidal conduction @ T
J
max.
180
o
0.009
0.009
0.009
120
o
0.010
0.010
0.010
90
o
0.010
0.010
0.014
60
o
0.020
0.020
0.020
30
o
0.032
0.032
0.032
180
o
0.007
0.007
0.007
Rectangular conduction @ T
J
max.
120
o
0.011
0.011
0.011
90
o
0.015
0.015
0.015
60
o
0.020
0.020
0.020
30
o
0.033
0.033
0.033
Units
K/W
MAGN-A-paks Suitable for Current Source Inverters
Thyristor
V
DRM
V
RRM
1400
1400
1600
1600
1800
1800
2000
2000
1500
1500
1700
1700
1900
1900
2100
2100
Diode
V
RSM
V
RRM
V
RSM
2000
2000
2500
2500
2800
2800
3200
3200
I
T(AV)
/ I
F(AV)
@ T
C
170A
@ 85°C
IRKH170-14D20
IRKL170-14D20
IRKH170-16D25
IRKL170-16D25
Not Available
Not Available
Not Available
Not Available
230A
@ 85°C
IRKH230-14D20
IRKL230-14D20
IRKH230-16D25
IRKL230-16D25
IRKH230-18D28
IRKL230-18D28
IRKH230-20D32
IRKL230-20D32
250A
@ 85°C
IRKH250-14D20
IRKL250-14D20
IRKH250-16D25
IRKL250-16D25
Not Available
Not Available
Not Available
Not Available
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
Application Notes
Current Source Inverters
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as opposed
to Fast) Thyristors and Diodes.
3xIR L
K ...
M
3xIR H
K ...
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation inductances
and limited fault currents.
Their simple construction, illustrated by the circuit on the
left, is further enhanced by the use of MAGN-A-paks
which allow the power circuit of an Inverter to be realised
with 6 capacitors and 9 MAGN-A-paks all mounted on just
one heatsink.
The optimal design of Current Source Inverters requires
the use of Diodes with blocking voltages greater than
those of the thyristors .
This departure from conventional half-bridge modules is
catered for by MAGN-A-pak range with Thyristors up to
2000V and Diodes up to 3200V.
3xIR T
K ...
Current Source Inverter using 9 MAGN-A-paks
4
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IRK.170, .230, .250 Series
Bulletin I27102 rev. A 10/97
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
6
7
-
-
-
-
-
-
T
2
250
3
-
14 D20
4
5
N
6
Module type
Circuit configuration (See Outline Table)
Current rating
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
Current Source Inverters Types
None = Standard devices
N = aluminum nitrade substrate
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
IRKT...
IRKH...
IRKL...
IRKU...
IRKV...
IRKK...
IRKN...
NOTE: To order the Optional Hardware see Bulletin I27900
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5
NXP MCU
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