Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant |
| 雪崩能效等级（Eas） | 484 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 650 V |
| 最大漏极电流 (ID) | 17.5 A |
| 最大漏源导通电阻 | 0.19 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 57.2 A |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| SP000881160 | IPA65R190CFDXKSA2 | IPB65R190CFD | IPA65R190CFD | IPI65R190CFD | IPP65R190CFDXKSA1 | IPI65R190CFDXKSA1 | IPW65R190CFDFKSA1 | IPW65R190CFD | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Power Field-Effect Transistor, | MOSFET PT5 100/20V NCH | MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 | MOSFET HIGH POWER_LEGACY | MOSFET HIGH POWER_LEGACY | MOSFET N-CH 650V 17.5A TO247 | 漏源电压（Vdss）：650V 连续漏极电流（Id）（25°C 时）：17.5A(Tc) 栅源极阈值电压：4.5V @ 730uA 漏源导通电阻：190mΩ @ 7.3A,10V 最大功率耗散（Ta=25°C）：151W(Tc) 类型：N沟道 |
| 是否Rohs认证 | 符合 | 符合 | - | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant | unknown | - | compliant | compliant | compliant | compliant | compliant | compliant |
| 雪崩能效等级（Eas） | 484 mJ | 484 mJ | - | 484 mJ | 484 mJ | 484 mJ | 484 mJ | 484 mJ | 484 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 650 V | 650 V | - | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| 最大漏极电流 (ID) | 17.5 A | 17.5 A | - | 17.5 A | 17.5 A | 17.5 A | 17.5 A | 17.5 A | 17.5 A |
| 最大漏源导通电阻 | 0.19 Ω | 0.19 Ω | - | 0.19 Ω | 0.19 Ω | 0.19 Ω | 0.19 Ω | 0.19 Ω | 0.19 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-220AB | - | TO-220AB | TO-262AA | TO-220AB | TO-262AA | TO-247 | TO-247 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSIP-T3 | R-PSFM-T3 | R-PSIP-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | - | 3 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | IN-LINE | FLANGE MOUNT | IN-LINE | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 57.2 A | 57.2 A | - | 57.2 A | 57.2 A | 57.2 A | 57.2 A | 57.2 A | 57.2 A |
| 表面贴装 | NO | NO | - | NO | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大漏极电流 (Abs) (ID) | - | 17.5 A | - | 17.5 A | 17.5 A | 17.5 A | 17.5 A | 17.5 A | 17.5 A |
| 最高工作温度 | - | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 最低工作温度 | - | -55 °C | - | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 最大功率耗散 (Abs) | - | 34 W | - | 34 W | 151 W | 151 W | 151 W | 151 W | 151 W |
| 是否无铅 | - | - | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 零件包装代码 | - | - | - | TO-220AB | TO-262AA | TO-220AB | TO-262AA | TO-247 | TO-247 |
| 针数 | - | - | - | 3 | 3 | 3 | 3 | 3 | 3 |
| 认证状态 | - | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
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