Small Signal Field-Effect Transistor, 12V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
| 参数名称 | 属性值 |
| 厂商名称 | ALD [Advanced Linear Devices] |
| 包装说明 | IN-LINE, R-CDIP-T14 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW THRESHOLD, HIGH INPUT IMPEDANCE |
| 配置 | COMMON SUBSTRATE, 4 ELEMENTS |
| 最小漏源击穿电压 | 12 V |
| 最大漏源导通电阻 | 1800 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CDIP-T14 |
| 元件数量 | 4 |
| 端子数量 | 14 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | P-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| ALD1107DBMXXXX | ALD1117DAMXXXX | ALD1107SBXXXX | ALD1117SAXXXX | ALD1117PAXXXX | ALD1107PBXXXX | |
|---|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 12V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| 包装说明 | IN-LINE, R-CDIP-T14 | IN-LINE, R-CDIP-T8 | SMALL OUTLINE, R-PDSO-G14 | SMALL OUTLINE, R-PDSO-G8 | IN-LINE, R-PDIP-T8 | IN-LINE, R-PDIP-T14 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE |
| 配置 | COMMON SUBSTRATE, 4 ELEMENTS | COMMON SUBSTRATE, 2 ELEMENTS | COMMON SUBSTRATE, 4 ELEMENTS | COMMON SUBSTRATE, 2 ELEMENTS | COMMON SUBSTRATE, 2 ELEMENTS | COMMON SUBSTRATE, 4 ELEMENTS |
| 最小漏源击穿电压 | 12 V | 12 V | 12 V | 12 V | 12 V | 12 V |
| 最大漏源导通电阻 | 1800 Ω | 1800 Ω | 1800 Ω | 1800 Ω | 1800 Ω | 1800 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CDIP-T14 | R-CDIP-T8 | R-PDSO-G14 | R-PDSO-G8 | R-PDIP-T8 | R-PDIP-T14 |
| 元件数量 | 4 | 2 | 4 | 2 | 2 | 4 |
| 端子数量 | 14 | 8 | 14 | 8 | 8 | 14 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | YES | YES | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | ALD [Advanced Linear Devices] | - | - | ALD [Advanced Linear Devices] | ALD [Advanced Linear Devices] | ALD [Advanced Linear Devices] |
| Base Number Matches | - | 1 | 1 | 1 | 1 | - |
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