SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC Converter applications.
It’s mainly suitable for Li-ion battery pack.
8
KMC7D0CN20CA
Common N-Ch Trench MOSFET
C
D
5
A
FEATURES
V
DSS
=20V, I
D
=7A.
Low Drain to Source On Resistance.
: R
DS(ON)
=20.5m (Max.) @ V
GS
=4.5V
: R
DS(ON)
=21.0m (Max.) @ V
GS
=4.0V
: R
DS(ON)
=22.5m (Max.) @ V
GS
=3.1V
: R
DS(ON)
=26.0m (Max.) @ V
GS
=2.5V
ESD Protection.
Super High Dense Cell Design.
1
4
E1
E
B
A1
DIM
A
A1
B
GAUGE
PLANE
C
D
E
E1
L
MILLIMETERS
1.2 MAX
0.15 MAX
_
0.28 + 1
0.65 Typ.
_
3.0 + 0.10
_
6.40 + 0.20
_
4.40 + 0.10
_
+ 0.20
0.50
0.25
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
DC
Drain Current
)
SYMBOL
V
DSS
V
GSS
I
D
*
I
DP
*
I
S
*
RATING
20
12
7
A
28
1.7
1.5
150
-55 150
83.3
/W
A
W
UNIT
V
V
Marking
TSSOP-8
Type Name
Pulsed
Source to Drain Diode Current
Drain Power Dissipation
Ta = 25
KMC7D0
CN20CA
P
D
*
T
j
T
stg
R
thJA
*
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Lot No.
Note > *Surface Mounted on 1” 1” FR4 Board, t≤10sec
PIN CONNECTION (TOP VIEW)
D
S1
S1
G1
1
2
3
4
8
7
6
5
D
S2
S2
G2
1
2
3
4
Rg
Rg
8
7
6
5
2008. 12. 19
Revision No : 3
1/5
KMC7D0CN20CA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
th
V
GS
=0V, I
D
=250 A
V
DS
=16V, V
GS
=0V
V
GS
= 10V, V
DS
=0V
V
DS
=V
GS,
I
D
=250 A
V
GS
=4.5V, I
D
=4.0A
Drain to Source On Resistance
R
DS(ON)
*
V
GS
=4.0V, I
D
=3.0A
V
GS
=3.1V, I
D
=3.0A
V
GS
=2.5V, I
D
=3.0A
Gate Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source to Drain Diode Ratings
Source to Drain Diode Forward Voltage
Note > *Pulse test : Pulse width 300
V
SD
*
V
GS
=0V, I
S
=1.7A
-
0.8
1.2
V
Q
g
*
Q
gs
*
Q
gd
*
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10V, V
GS
=4.0V
I
D
=4.0A, R
G
=6
V
DS
=10V, I
D
=7A
V
GS
=4.0V
-
-
-
-
-
-
-
6.7
0.8
3.2
1.0
2.1
8.5
7.5
-
-
-
-
-
-
-
s
nC
R
g
g
fs
*
f=1MHz
V
DS
=5V, I
D
=5A
20
-
-
0.5
-
-
-
-
-
-
-
-
-
0.7
16.5
17.0
18.5
20.5
2.5
12
-
1
10
1.5
20.5
21.0
22.5
26.0
-
-
k
S
m
V
A
A
V
)
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
SYMBOL
, Duty Cycle 2%.
2008. 12. 19
Revision No : 3
2/5
KMC7D0CN20CA
Fig 1. I
D
- V
DS
30
30
V
GS
=4.5,4.0,3.1,2.5V
Fig 2. R
DS(ON)
- I
D
Drain to Source On-Resistance
R
DS(ON)
(mΩ)
Common Source
Ta =25 C
Pulse Test
Drain Current I
D
(A)
24
18
25
20
V
GS
=2.5V
V
GS
=4.5V
V
GS
=2V
15
10
5
0
12
6
0
0
1
2
3
4
5
0
6
12
18
24
30
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig 3. I
D
- V
GS
30
24
18
12
125
C
Fig 4. R
DS(ON)
- T
j
50
I
D
= 4A
Pulse Test
Drain to Source On-Resistance
R
DS(ON)
(mΩ)
Drain Current I
D
(A)
40
30
V
GS
=2.5V
20
10
0
-75
V
GS
=4.5V
6
0
0
0.5
25
C
-25
C
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Junction Temperature Tj ( C )
Fig 5. V
th
- Tj
2.0
Fig 6. I
S
- V
SD
100
Gate Threshold Voltage V
th
(V)
1.6
1.2
0.8
0.4
0
Reverse Drain Current I
S
(A)
Common Source
V
GS
= V
DS,
I
D
= 250µA
Pulse Test
10
1
85
C
25
C
-40
C
0.1
-75
-50
-25
0
25
50
75
100 125 150
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Junction Temperature Tj ( C)
Source to Drain Forward Voltage V
SD
(V)
2008. 12. 19
Revision No : 3
3/5
KMC7D0CN20CA
Fig 7. C - V
DS
V
GS
= 0
f =1MHz
Fig 8. V
GS
- Qg
Gate to Source Voltage V
GS
(V)
5
V
DS
= 10V
I
D
=
7A
10
4
Capacitance C (pF)
4
10
3
Ciss
Coss
3
10
2
Crss
2
1
10
1
10
-2
0
10
-1
1
10
1
10
2
0
1.5
3.0
4.5
6.0
7.5
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Fig 9. Safe Operating Area
10
2
Operating in this area is
Limited by R
DS(ON)
200µs
Drain Current I
D
(A)
10
1
1ms
1
DC
10ms
100ms
10
-1
V
GS
= 4.5V
Single Pulse
Ta = 25 C
10
-2
10
-2
10
-1
1
10
1
10
2
Drain to Source Voltage V
DS
(V)
Fig 10. Transient Thermal Response Curve
Normalized Transient Thermal Resistance
10
1
1
Duty Cycle 0.5
0.2
0.1
P
DM
t1
t2
- Duty Cycle, D=t1/t2
10
-1
0.05
0.02
Single Pulse
- R
thJA
=
10
-2
10
-1
1
10
1
10
2
10
-2 -3
10
T
j(max)
- T
a
P
D
10
3
Square Wave Pulse Duration tw (sec)
2008. 12. 19
Revision No : 3
4/5
KMC7D0CN20CA
Fig 11. Gate Charge
VGS
10 V
Schottky
Diode
ID
0.5
VDSS
ID
1.0 mA
V
DS
VGS
Q
Qgs
Qgd
Qg
Fig 12 . Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
4.0 V
VGS
10%
t
d(on)
tr
t
on
t
d(off)
VGS
t
f
t
off
2008. 12. 19
Revision No : 3
5/5
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