SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
A
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
O
C
F
E
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
800
400
10
5
10
2
75
150
-55 150
Equivalent Circuit
C
G
B
UNIT
I
Q
V
V
V
K
M
L
J
D
P
A
A
N
1
2
N
3
H
1. BASE
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
W
1
2
3
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
_
9.9 + 0.2
A
15.95 MAX
B
1.3+0.1/-0.05
C
_
D
0.8 + 0.1
_
E
3.6 + 0.2
_
F
2.8 + 0.1
3.7
G
H
0.5+0.1/-0.05
1.5
I
_
J
13.08 + 0.3
K
1.46
_
1.4 + 0.1
L
_
1.27+ 0.1
M
_
2.54 + 0.2
N
_
4.5 + 0.2
O
_
2.4 + 0.2
P
_
9.2 + 0.2
Q
TO-220AB
B
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Emitter Cut-off Current
DC Current Gain
SYMBOL
I
EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
E
TEST CONDITION
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
V
CB
=10V, f=1MHz
V
CE
=10V, I
C
=0.5A
OUTPUT
300µS
I
B1
I
B2
I
B2
150Ω
INPUT
I
B1
MIN.
-
18
8
-
-
-
-
-
-
4
-
2
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
65
-
-
-
-
-
800
1.4
1.9
MAX.
10
35
-
0.5
0.6
1
1.2
1.6
-
-
0.15
5
0.8
1.6
-
-
-
UNIT
A
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
Diode Forward Voltage
V
BE(sat)
C
ob
f
T
t
on
t
stg
t
f
V
F
V
pF
MHz
S
S
S
V
nS
S
S
I
B1
=0.4A, I
B2
=-1A
DUTY CYCLE < 2%
=
V
CC
=300V
I
F
=2A
I
F
=0.4A
I
F
=1A
I
F
=2A
*Reverse recovery tims (di/dt=10A/ S)
t
rr
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : h
FE
Classification R : 18~27, O : 23~35
2009. 2. 26
Revision No : 4
1/4
MJE13005D
Fig 1. h
FE
- I
C
100
Fig 2. V
BE(sat)
,V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
BE(sat)
,V
CE(sat)
(V)
V
CE
=1V
10
DC CURRENT GAIN h
FE
T
a
=125 C
-20 C
I
C
/I
B
=4
25 C
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.01
0.1
1
10
0.01
0.01
0.1
1
10
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
Fig 3. h
FE
- I
C
COLLECTOR OUTPUT CAPACITANCE
C
ob
(pF)
100
1k
500
300
100
50
30
10
5
3
1
1
3
V
CE
=5V
Fig 4. C
ob
- V
CB
DC CURRENT GAIN h
FE
T
a
=125 C
25 C
-20 C
COMMON
EMITTER
f=1MHz
Ta=25 C
10
1
0.01
0.1
1
10
10
30
100
300
1k
COLLECTOR CURRENT I
C
(A)
COLLECTOR-BASE VOLTAGE V
CB
(V)
Fig 5. I
C
- V
CE
COLLECTOR CURRENT I
C
(A)
5
4
3
I
B
=100mA
Fig 6. SWITCHING CHARACTERISTIC
10
SWITCHING TIME (µS)
I
B
=500mA
I
B
=400mA
I
B
=300mA
I
B
=200mA
t
stg
1
2
1
0
0
1
2
3
4
5
6
7
8
I
B
=50mA
0.1
V
CC
=300V
I
C
=5I
B1
,=-2.5I
B2
t
f
I
B
=0V
0.01
10
0.1
9
1
10
COLLECTOR EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
2009. 2. 26
Revision No : 4
2/4
MJE13005D
Fig 7. t
rr
- I
F
1.6
Fig 8. V
F
- I
F
FORWARD DIODE VOLTAGE V
F
(V)
10
REVERSE RECOVERY TIME t
rr
(µS)
1.4
1.2
1
1.0
0.8
1.0
1.5
2.0
0.1
0.01
0.1
1
10
FORWARD CURRENT I
F
(A)
FORWARD DIODE CURRENT I
F
(A)
Fig 9. SAFE OPERATING AREA
COLLECTOR CURRENT I
C
(A)
100
COLLECTOR POWER DISSIPATION P
C
(W)
Fig 10. P
C
- Ta
100
Tc=Ta INFINITE HEAT SINK
10
80
60
40
20
0
0
25
50
75
100
125
150
175
200
1µs
10µs
1ms
5ms
DC
1
0.1
0.01
10
100
1000
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
AMBIENT TEMPERATURE Ta ( C)
Fig 11. REVERSE BIASED SAFE
OPERATING AREA
COLLECTOR CURRENT I
C
(pk) (A)
10
9
8
7
6
5
4
3
2
1
0
0
100 200 300 400 500 600 700 800 900
I
B1
=2A
V
BE
(off)=-6.5V
L=50 H
V
CC
=20V
COLLECTOR-EMITTER CLAMP VOLTAGE V
CE
(V)
2009. 2. 26
Revision No : 4
3/4
MJE13005D
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS
L
C
(3)
I
B1
(1)
I
B
T.U.T
I
C
V
CE
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
V
BB
+
V
Clamp
R
BB(2)
-
V
CC
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter
junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse
biased turn-off.
This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Figure 11 gives the complete RBSOA characteristics.
2009. 2. 26
Revision No : 4
4/4
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